Search Results (96)

Organic field-effect transistors (OFETs) require reliable micro- and nanoscale patterning of semiconducting layers, yet conjugated polymers have long been considered incompatible with photolithography due to dissolution and chemical damage from photoresist solvents. Here, we present a photolithography-compatible strategy based on doping-induced solubility conversion (DISC), demonstrated using poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT). AuCl₃ doping reversibly modulates the benzoid/quinoid resonance balance, lamellar stacking, and π–π interactions, suppressing solubility during lithographic exposure, while dedoping restores the intrinsic electronic properties. Using this approach, micropatterns with linewidths as small as 2 µm were fabricated in diverse geometries—including line arrays, concentric rings, dot arrays, and curved channels—with high fidelity; quantitative analysis of dot arrays yielded mean absolute errors of 48–66 nm and coefficients of variation of 2.0–3.9%, confirming resolution and reproducibility across large areas. Importantly, OFETs based on patterned PBTTT exhibited charge-carrier mobility, threshold voltage, and on/off ratios comparable to spin-coated devices, despite undergoing multiple photolithography steps, indicating preservation of transport characteristics. Furthermore, the same DISC-assisted lithography was successfully applied to other representative p-type conjugated polymers, including P3HT and PDPP-4T, confirming the universality of the method. This scalable strategy thus combines the precision of established lithography with the functional advantages of organic semiconductors, providing a robust platform for high-density organic electronic integration in flexible circuits, biointerfaces, and active-matrix systems. Full article

The synthesis, phase behavior and semiconductor properties of two novel organosilicon tetramers with dialkyl-substituted [1]benzothieno[3,2-b]benzothiophene (BTBT) moieties, D4-Und-BTBT-Hex and D4-Hex-BTBT-Oct, are described. The synthesis of these molecules was carried out by sequential modification of the BTBT core by carbonyl-containing functional alkyl substituents using the Friedel–Crafts reaction, followed by the reduction in the keto group. The target tetramers, D4-Und-BTBT-Hex and D4-Hex-BTBT-Oct, were obtained by the hydrosilylation reaction between tetraallylsilane and corresponding 1,1,3,3-tetramethyl-1-(ω-(7-alkyl[1]benzothieno[3,2-b]benzothiophen-2-yl)alkyl)disiloxanes. The chemical structure of the compounds obtained was confirmed by NMR ¹H-, ¹³C- and ²⁹Si-spectroscopy, gel permeation chromatography and elemental analysis. Their phase behavior was investigated by differential scanning calorimetry, polarization optical microscopy and X-ray diffraction analysis. It was found that D4-Und-BTBT-Hex shows higher crystallinity at room temperature as compared to D4-Hex-BTBT-Oct, while both molecules possess smectic ordering favorable for active layer formation in organic field-effect transistors (OFETs). The active layers were applied by spin-coating under conditions of a homogeneous thin layer formation with a low content of defects. The devices obtained from D4-Und-BTBT-Hex have demonstrated good semiconductor characteristics in OFETs with a hole mobility up to 3.5 × 10⁻² cm² V⁻¹ s⁻¹, a low threshold voltage and an on/off ratio up to 10⁷. Full article

Organic field-effect transistor (OFET) biosensors have emerged as a transformative technology for clinical biomarker detection, offering unprecedented sensitivity, selectivity, and versatility in point-of-care (POC) diagnostics. This review examines the fundamental principles, materials innovations, device architectures, and clinical applications of OFET-based biosensing platforms. The unique properties of organic semiconductors, combined with advanced biorecognition strategies, enable the detection of clinically relevant biomarkers at low concentrations. Recent developments in organic semiconductor materials have significantly enhanced device performance and stability. The integration of novel device architectures such as electrolyte-gated OFETs (EGOFETs) and extended-gate configurations has expanded the operational capabilities of these sensors in aqueous environments. Clinical applications span a broad spectrum of biomarkers, demonstrating the versatility of OFET biosensors in disease diagnosis and monitoring. Despite remarkable progress, challenges remain in terms of long-term stability, standardization, and translation to clinical practice. The convergence of organic electronics, biotechnology, and clinical medicine positions OFET biosensors as a promising platform for next-generation personalized healthcare and precision medicine applications. Full article

Organic field-effect transistors (OFETs) have emerged as a transformative platform for high-performance sensing technologies, yet their full potential can be realized only through coordinated performance optimization. This article provides a comprehensive review of recent strategies employed in polymer OFETs to enhance key parameters, including carrier mobility (μ), threshold voltage (Vth), on/off current ratio (I_on/I_off), and operational stability. These strategies encompass both physical and chemical approaches, such as annealing, self-assembled monolayers (SAMs), modification of main and side polymer chains, dielectric-layer engineering, buffer-layer insertion, and blending or doping techniques. The development of high-performance devices requires precise integration of physical processing and chemical design, alongside the anticipation of processing compatibility during the molecular design phase. This article further highlights the limitations of focusing solely on high mobility and advocates a balanced optimization across multiple dimensions—mobility, mechanical flexibility, environmental stability, and consistent functional performance. Adopting a multi-scale optimization framework spanning molecular, film, and device levels can substantially enhance the adaptability of OFETs for emerging applications such as flexible sensing, bioelectronic interfaces, and neuromorphic computing. Full article

This article reviews the research progress of BN-doped polycyclic aromatic hydrocarbons in the field of optoelectronics in recent years. Polycyclic aromatic hydrocarbons and their derivatives have attracted widespread attention in the field of organic optoelectronic materials due to their unique optical and electronic properties and thus are widely used in various fields such as organic light-emitting diodes (OLEDs), field-effect transistors (OFETs), and organic solar cells (OSCs). By introducing boron–nitrogen (BN) units to replace carbon–carbon (C-C) units in the framework of polycyclic aromatic hydrocarbons, the electronic structure and spatial configuration of conjugated molecules can be effectively regulated, thereby optimizing their optoelectronic properties. This article first outlines the structural characteristics of BN-doped polycyclic aromatic hydrocarbons, then explores their synthesis methods and properties, and provides a detailed overview of their applications in the field of optoelectronics. BN-doped polycyclic aromatic hydrocarbons have shown great potential for applications in both optical and electrical fields. Finally, this review points out that although the application of BN-embedded polycyclic aromatic hydrocarbons in optoelectronic devices is still in its early stages, facing difficulties in synthesis and insufficient stability, the rational design of BN to replace polycyclic aromatic hydrocarbons is expected to bring new opportunities for organic electronics and advance the development of this field. Full article

Due to their unique advantages—such as small size, easy integration, flexible wearability, low power consumption, high sensitivity, and material designability—organic field-effect transistor (OFET) gas sensors have significant application potential in fields such as environmental detection, smart healthcare, robotics, and artificial intelligence. Benzothiadiazole fused tetrathiafulvalenes (TTF) are promising organic semiconductor candidates due to their abundant S atoms and planar π-π conjugation skeletons. We designed a series of derivatives by side-chain modification, and conducted systematic computations on TTF derivatives, including reported and newly designed materials, to analyze how geometric factors affect the charge transport properties of materials at the PBE0/6-311G(d,p) level. The frontier molecular orbitals (FMOs) and reorganization energy indicate that the designed derivatives are promising candidates for organic semiconductor sensing materials. Furthermore, theoretical calculations reveal that the designed TTF derivatives are sensitive to gases like NH₃, H₂S, and SO₂, indicating organic field-effect transistors (OFETs) with gas-sensing functions. Full article

This work introduces a general solution for printing wavelength-selective bulk-heterojunction photosensitive organic field effect transistors (PS-OFETs) by addressing electrode thickness variation and the feasibility of color selectivity in detecting incident light. The inkjet-printed silver electrode thickness was varied from 125 to $950 \mathrm{n}\mathrm{m}$ by multilayer printing. PIF, IDFBR, and ITIC-4F were chosen as the active semiconductor materials with complementary optical absorption. Results indicate that PS-OFETs exhibit the best functionality at an electrode thickness of approximately $325 \mathrm{n}\mathrm{m}$ and an active material combination with PIF:IDFBR (1:1). For the $540 \mathrm{n}\mathrm{m}$ wavelength, a responsivity of $55 \mathrm{m}\mathrm{A}{\mathrm{W}}^{-1}$ was obtained. This is four-fold higher than the photoresponse obtained at $700 \mathrm{n}\mathrm{m}$. Full article

In this study, we successfully prepared silver electrodes through a silver mirror reaction. By carefully regulating the amount of ammonia complexing agent in the silver–ammonia solution, we effectively suppressed the decomposition of the plating solution while reducing the surface roughness of silver films from 9.22 nm to 4.42 nm. The electrical conductivity of our solution-processed silver layers was nearly one order of magnitude higher than that of conventional inkjet-printed silver electrodes. When applied as source-drain electrodes in organic field-effect transistors (OFETs), these electrodes enabled devices with an average mobility of 0.13 cm²/(V·s) and remarkably low mobility variation of only 8.7%. Furthermore, we modified the silver electrodes through chemical platinum plating, achieving a significant 0.74 eV alteration in work function, which demonstrates the great potential of chemical plating for surface functionalization in solution-processed organic electronic devices. Full article

Stretchable organic field-effect transistors (OFETs), with inherent flexibility, versatile sensing mechanisms, and signal amplification properties, provide a unique device-level solution for the real-time, in situ detection of trace gaseous pollutants. However, serious challenges remain regarding the synergistic optimization of OFET gas sensor production preparation, mechano-electrical properties, and gas-sensing performance. Although the introduction of microstructures can theoretically provide OFETs with enhanced sensing performance, the high-precision process required for microstructure fabrication limits scale-up. Herein, a straightforward hybrid solvent strategy is proposed for regulating the intrinsic microstructure of the organic semiconductor layer, with the aim of constructing an ultrasensitive PDVT-10/SEBS fully stretchable OFET NO₂ sensor. The binary solvent system induces the formation of nanoneedle-like structures in the PDVT-10/SEBS organic semiconductor, which achieves a maximum mobility of 2.71 cm² V⁻¹ s⁻¹, a switching current ratio generally exceeding 10⁶, and a decrease in mobility of only 30% at 100% strain. Specifically, the device exhibits a response of up to 77.9 × 10⁶ % within 3 min and a sensitivity of up to 1.4 × 10⁶ %/ppm, and it demonstrates effective interference immunity, with a response of less than 100% to nine interferences. This work paves the way for next-generation wearable smart sensors. Full article

Optimizing charge transport in organic semiconductors is crucial for advancing next-generation optoelectronic devices. The performance of organic field-effect transistors (OFETs) is significantly influenced by the alignment of films in the channel direction and the quality of the dielectric surface, which should be uniform, smooth, and free of charge-trapping defects. Our study reports the enhancement of OFET performance using large-area, uniform, and oriented thin films of regioregular poly[3-hexylthiophene] (RR-P3HT), prepared via the Floating Film Transfer Method (FTM) on octadecyltrichlorosilane (OTS) passivated SiO₂ surfaces. SiO₂ surfaces inherently possess dangling bonds that act as charge traps, but these can be effectively passivated through optimized surface treatments. OTS treatment has improved the optical anisotropy of thin films and the surface wettability of SiO₂. Notably, using octadecene as a solvent during OTS passivation, as opposed to toluene, resulted in a significant enhancement of charge carrier transport. Specifically, passivation with OTS-F (10 mM OTS in octadecene at 100 °C for 48 h) led to a >150 times increase in mobility and a reduction in threshold voltage compared to OTS-A (5 mM OTS in toluene for 12 h at room temperature). Under optimal conditions, these FTM-processed RR-P3HT films achieved the best device performance, with a saturated mobility (μ_sat) of 0.18 cm²V⁻¹s⁻¹. Full article

Organic semiconductor materials are interesting due to their application in various organic electronics devices. [1]benzothieno[3,2-b][1]benzothiophene (BTBT) is a widely used building block for the creation of such materials. In this work, three novel solution-processable regioisomeric derivatives of BTBT—2,7-bis(3-octylthiophene-2-yl)BTBT (1), 2,7-bis(4-octylthiophene-2-yl)BTBT (2), and 2,7-bis(5-octylthiophene-2-yl)BTBT (3)—were synthesized and investigated. Their optoelectronic properties were characterized experimentally by ultraviolet–visible and fluorescence spectroscopy, time-resolved fluorimetry, and cyclic voltammetry and studied theoretically by Time-Dependent Density Functional Theory calculations. Their thermal properties were investigated by a thermogravimetric analysis, differential scanning calorimetry, polarizing optical microscopy, and in situ small-/wide-angle X-ray scattering measurements. It was shown that the introduction of alkyl substituents at different positions (3, 4, or 5) of thiophene moieties attached to a BTBT fragment significantly influences the optoelectronic properties, thermal stability, and phase behavior of the materials. Thin films of each compound were obtained by drop-casting, spin-coating and doctor blade techniques and used as active layers for organic field-effect transistors. All the OFETs exhibited p-channel characteristics under ambient conditions, while compound 3 showed the best electrical performance with a charge carrier mobility up to 1.1 cm²·V⁻¹s⁻¹ and current on/off ratio above 10⁷. Full article

Organic field-effect transistors (OFETs) are an ideal platform for intrinsically stretchable sensors due to their diverse mechanisms and unique electrical signal amplification characteristics. The remarkable advantages of intrinsically stretchable sensors lie in their molecular tunability, lightweight design, mechanical robustness, solution processability, and low Young’s modulus, which enable them to seamlessly conform to three-dimensional curved surfaces while maintaining electrical performance under significant deformations. Intrinsically stretchable sensors have been widely applied in smart wearables, electronic skin, biological detection, and environmental protection. In this review, we summarize the recent progress in intrinsically stretchable sensors based on OFETs, including advancements in functional layer materials, sensing mechanisms, and applications such as gas sensors, strain sensors, stress sensors, proximity sensors, and temperature sensors. The conclusions and future outlook discuss the challenges and future outlook for stretchable OFET-based sensors. Full article

The performance of organic field-effect transistors (OFETs) is highly dependent on the dielectric–semiconductor interface, especially in ion-gel-gated OFETs, where a significantly high carrier density is induced at the interface at a low gate voltage. This study investigates how altering the alkyl side chain length of donor–acceptor (D-A) copolymers impacts the electrical performance of ion-gel-gated OFETs. Two difluorobenzothiadiazole-based D-A copolymers, PffBT4T-2OD and PffBT4T-2DT, are compared, where the latter features longer alkyl side chains. Although PffBT4T-2DT shows a 2.4-fold enhancement of charge mobility in the SiO₂-gated OFETs compared to its counterpart due to higher crystallinity in the film, PffBT4T-2OD outperforms PffBT4T-2DT in the ion-gel-gated OFETs, manifested by an extraordinarily high mobility of 17.7 cm²/V s. The smoother surface morphology, as well as stronger interfacial interaction between the ion-gel dielectric and PffBT4T-2OD, enhances interfacial charge accumulation, which leads to higher mobility. Furthermore, PffBT4T-2OD is blended with a polymeric elastomer SEBS to achieve ion-gel-gated flexible OFETs. The blend devices exhibit high mobility of 8.6 cm²/V s and high stretchability, retaining 45% of initial mobility under 100% tensile strain. This study demonstrates the importance of optimizing the chain structure of polymer semiconductors and the semiconductor–dielectric interface to develop low-voltage and high-performance flexible OFETs for wearable electronics applications. Full article

Organic field-effect transistors (OFETs) require ultra-precise electrical measurements due to their unique charge transport mechanisms and sensitivity to environmental factors, yet commercial semiconductor parameter analysers capable of such measurements are prohibitively expensive for many research laboratories. This study introduces a novel, cost-effective, and portable setup for high-precision OFET characterisation that addresses this critical need, providing a feasible substitute for conventional analysers costing tens of thousands of dollars. The suggested system incorporates measurement, data processing, and graphical visualisation capabilities, together with Bluetooth connectivity for local operation and Wi-Fi functionality for remote data monitoring. The device consists of a motherboard and specialised cards for low-current measurement, voltage measurement, and voltage generation, providing comprehensive OFET characterisation, including transfer and output characteristics, in accordance with IEEE-1620 standards. The system can measure current from picoamperes to milliamperes, with voltage measurements supported by high input resistance (>100 MΩ) and a voltage generation range of −30 V to +30 V. This versatile and accessible approach greatly improves the opportunities for future OFET research and development. Full article

Advancements in electronic device technology have led to an exponential growth in demand for more efficient and versatile transistors. In this context, organic field-effect transistors (OFETs) have emerged as a promising alternative due to their unique properties and potential for flexible and low-cost applications. However, to overcome some of the inherent limitations of OFETs, the integration of organic materials with other materials and technologies has been proposed, giving rise to a new generation of hybrid devices. In this article, we explore the development and advances of organic field-effect transistors and highlight the growing importance of hybrid devices in this area. In particular, we focus on three types of emerging hybrid devices: organic electrochemical transistors (OECTs), organic light-emitting field-effect transistors (OLEFETs) and organic field-effect waveguides (OFEWs). These devices combine the advantages of organic materials with the unique capabilities of other technologies, opening up new possibilities in fields such as flexible electronics, bioelectronics, or optoelectronics. This article provides an overview of recent advances in the development and applications of hybrid transistors, highlighting their crucial role in the next generation of electronic devices. Full article