Binary Solvent Engineering Modulates the Microstructure of Stretchable Organic Field-Effect Transistors for Highly Sensitive NO₂ Sensing

Stretchable organic field-effect transistors (OFETs), with inherent flexibility, versatile sensing mechanisms, and signal amplification properties, provide a unique device-level solution for the real-time, in situ detection of trace gaseous pollutants. However, serious challenges remain regarding the synergistic optimization of OFET gas sensor production preparation, mechano-electrical properties, and gas-sensing performance. Although the introduction of microstructures can theoretically provide OFETs with enhanced sensing performance, the high-precision process required for microstructure fabrication limits scale-up. Herein, a straightforward hybrid solvent strategy is proposed for regulating the intrinsic microstructure of the organic semiconductor layer, with the aim of constructing an ultrasensitive PDVT-10/SEBS fully stretchable OFET NO₂ sensor. The binary solvent system induces the formation of nanoneedle-like structures in the PDVT-10/SEBS organic semiconductor, which achieves a maximum mobility of 2.71 cm² V⁻¹ s⁻¹, a switching current ratio generally exceeding 10⁶, and a decrease in mobility of only 30% at 100% strain. Specifically, the device exhibits a response of up to 77.9 × 10⁶ % within 3 min and a sensitivity of up to 1.4 × 10⁶ %/ppm, and it demonstrates effective interference immunity, with a response of less than 100% to nine interferences. This work paves the way for next-generation wearable smart sensors.