Search Results (380)

We report a novel approach to fabricating high-performance and robust quantum dot light-emitting diodes (QLEDs) utilizing sputtered SnO₂ thin films as the electron transport layer (ETL). While conventional solution-processed ZnMgO NP ETLs face limitations in mass production, the sputtering process offers advantages for uniform and reproducible thin film deposition. Herein, the structural, optical, and electrical properties of SnO₂ thin films were optimized by controlling the Ar/O₂ ratio and substrate heating temperature during sputtering. SnO₂ thin films with O₂ gas improve charge balancing in QLEDs by lowering the conduction band minimum. Furthermore, it was observed that oxygen vacancies in SnO₂ function as exciton quenching sites, which directly impacts the long-term stability of the device. QLEDs fabricated under optimal conditions (Ar/O₂ = 35:5, 200 °C heating) achieved a peak luminance of 99,212 cd/m² and a current efficiency of 21.17 cd/A with excellent device stability. The findings suggest that sputtered SnO₂ ETLs are a highly promising technology for the commercial production of QLEDs. Full article

Tantalum nitride (TaN) coatings are valued for their hardness, chemical inertness, and biocompatibility; however, they lack intrinsic antibacterial properties, which limits their application in biomedical environments. Introducing copper (Cu) into the TaN matrix offers a potential solution by combining TaN’s mechanical and chemical durability with Cu’s well-documented antimicrobial action. This study explores how varying copper incorporation affects the structural, electrical, photocatalytic, and antibacterial characteristics of TaCuN multilayer films synthesized via reactive magnetron sputtering. Three thin TaCuN films were fabricated using a high-power reactive magnetron co-sputtering system, varying the Cu target power to control the composition. Structural and morphological analysis was performed using X-ray diffraction (XRD), scanning/transmission electron microscopy (STEM/TEM), and energy-dispersive X-ray spectroscopy (EDS). Electrical conductivity was studied along and across the film surfaces at temperatures ranging from 20 to 375 K using AC impedance spectroscopy. Optical and photocatalytic properties were assessed using UV–Vis spectroscopy and methylene blue degradation tests. Antibacterial activity against Staphylococcus aureus was analyzed under visible light using CFU reduction tests. XRD and TEM analyses revealed a multilayered four-zone architecture with alternating Ta-, Cu-, and N-rich phases and a dominant cubic δ-TaN pattern. The layers exhibited pronounced conductivity anisotropy, with in-plane conductivity (~10³ Ω⁻¹ cm⁻¹) exceeding cross-plane conductivity by ~10⁷ times, attributed to the formation of a metallic conduction channel in the mid-layer. Optical spectra indicated limited light absorption above 300 nm and negligible photocatalytic activity. Increasing the Cu content substantially enhanced antibacterial efficiency, with the highest-Cu sample achieving 95.6 % bacterial growth reduction. Morphological evaluation indicated that smooth film surfaces (Ra < 0.2 μm) effectively minimized bacterial adhesion. Reactive magnetron sputtering enables the precise engineering of TaCuN multilayers, combining high electrical anisotropy with robust antibacterial functionality. The optimized TaCuN coating offers promising potential in biomedical and protective applications where both conductivity and microbial resistance are required. Full article

Transparent conductive electrodes that combine flexibility with effective electromagnetic interference (EMI) shielding are important for next-gen flexible electronics and 5G/6G communication devices. Achieving high optical transparency, low sheet resistance, and broadband shielding performance remains a sophisticated task. This work demonstrates a solution: the synthesis and comprehensive characterization of flexible In₂O₃/Ag/In₂O₃ (IAI) structures on polyethylene terephthalate substrates. The optimized structure with a 13.2 ± 1.1 nm silver interlayer achieves an incredible combination of properties: high optical transmittance (82.59% at 500 nm), low sheet resistance (6.4 ± 0.8 Ω/sq), and insignificant optical haze (1.04%). Broadband EMI shielding measurements from 10 MHz to 1 THz reveal a uniform shielding effectiveness of 25–30 dB across band from radiowave to terahertz. The IAI structures also show outstanding mechanical resilience, maintaining their electrical and shielding performance under repeated bending. This unique set of attributes positions IAI thin films as a prospective material for transparent EMI shielding in advanced telecommunications and flexible optoelectronics. Full article

Coordination polymers, particularly those with one- and two-dimensional structures, have garnered significant attention owing to their excellent electrical and optical properties. However, the development of reliable molding techniques for fabricating thin films, pellets, and ingots remains critical for practical applications. In this study, we introduce a novel approach for the direct formation of continuous Ag-coordinated polymer thin films on polymer substrates doped with Ag ions. This process involves ion exchange between the doped Ag ions within the substrate and the protons of the organic ligands, followed by the formation of interfacial complexes between the eluted Ag ions and ligands. Time-resolved analysis revealed that ligand concentration plays a crucial role in thin film formation. Specifically, higher ligand concentrations accelerate nucleation, resulting in the formation of thin films composed of densely packed small-sized crystals. These findings demonstrate the effectiveness of the proposed method for fabricating high-density, uniformly coordinated polymer thin films. Full article

NiO films were successfully deposited by sol–gel spin coating on Si, glass, and ITO-covered glass substrates. The impact of the film thickness (the different number of layers), annealing temperatures (from 300 to 500 °C), and the substrate type on the crystal structure, film morphology, optical, and vibrational properties was investigated. X-ray diffraction (XRD) revealed a polycrystalline structure and the appearance of the cubic NiO phase. Field Emission Scanning Electron Microscopy (FESEM) was applied to explore the surface morphology of NiO films, deposited on glass and ITO substrates. The oxidation states of Ni were determined by X-ray photoelectron spectroscopy (XPS). The presence of Ni²⁺ and Ni³⁺ states was supposed. UV–VIS–NIR spectroscopy revealed that NiO films possessed a high average transparency of up to 74.6% in the visible spectral range when they were deposited on glass substrates, and up to 76.9% for NiO films on ITO substrates. The thermal treatments and the film thickness slightly affected the film transparency in the spectral range of 450–700 nm. The work function (WF) of the samples was determined. This research showed that good properties of sol–gel NiO films can be compared to the properties of those films produced using complicated and expensive techniques. Full article

High-quality AZO thin films were produced on a 4-inch Si substrate using large-area PLD equipment at a substrate temperature of 330 °C, with a ZnO: Al (98:2 wt.%) target. This study aims to enhance the electrical, optical, morphological and structural properties of large-area PLD-grown AZO thin films by tuning the deposition pressures. The samples were prepared under high-vacuum (HV) conditions, as well as in oxygen atmospheres of 0.005 mbar O₂, 0.01 mbar O₂, and 0.1 mbar O₂. Consequently, a bilayer AZO film was prepared in a combination of two deposition pressures (first layer prepared under HV, followed by the second layer prepared at 0.01 mbar O₂). Additionally, morphological and structural characterization revealed that high-quality columnar growth AZO thin films free of droplets, with a strong (002) orientation, were achieved on a 4-inch Si substrate. Moreover, Hall measurements in the Van der Pauw configuration were used to assess the electrical properties. A low electrical resistivity of 3.98 × 10⁻⁴ Ω cm, combined with a high carrier concentration (n) of 1.05 × 10²¹ cm⁻³ and a charge carrier mobility of 17.9 cm²/V s, was achieved at room temperature for the sample prepared under HV conditions. The optical characterization conducted through spectroscopic ellipsometry measurements showed that the large-area AZO sample exhibits an increased optical transparency in the visible (VIS) range with a near-zero extinction coefficient (k) and a wide bandgap of 3.75 eV, fulfilling the standards for materials classified as TCO. In addition, the increased thickness uniformity of the prepared AZO films over a large area represents a significant step in scaling the PLD technique for industrial applications. Full article

This study presents an innovative modification to the chemical bath deposition method for synthesizing zinc oxide thin films by incorporating a high-voltage electric field, with and without electrical polarity inversion, to influence film growth dynamics. Two configurations were developed to assess the effects of electric field strength, periodic inversion, air agitation, and solution pH on the morphological, structural, and optical properties of ZnO coatings. Morphology studies revealed that particle size, shape, and distribution were strongly dependent on synthesis parameters, with electric field and air injection enabling higher surface coverage and finer nanostructures. Crystalline structural analysis confirmed the formation of the wurtzite ZnO phase, with reduced interplanar spacing and crystallite size under electric fields, especially when polarity was inverted. Optical measurements showed a consistent increase in the band gap (blue shift) and reduced defect-related absorption when electric field is applied. These findings are evidence that controlled electric field application during chemical bath deposition enables precise tuning of ZnO film properties. Full article

Beta-gallium oxide (β-Ga₂O₃) is a semiconductor with an ultra-wide bandgap, high optical transparency, and excellent electrical properties, which can be finely tuned for a wide range of electronic devices. This study optimized the process conditions for fabricating β-Ga₂O₃ thin films with desired electrical characteristics. β-Ga₂O₃ films were deposited on (100) Si substrates via RF magnetron sputtering with varying O₂ flow rates and post-annealed at temperatures ranging from 600 °C to 800 °C. The structural and electrical properties of the films were analyzed using X-ray diffraction (XRD) spectroscopy, scanning electron microscopy (SEM), and Hall effect measurements. The XRD results confirmed the formation of nanocrystalline β-Ga₂O₃, with variations in peak intensities and shifts observed based on O₂ flow rates. The films exhibited carrier concentrations exceeding 5 × 10²² cm⁻³, mobilities ranging from 50 to 115 cm²/Vs, and resistivity around 1 × 10⁻⁶ Ω⋅cm. This study demonstrates that the electrical properties of β-Ga₂O₃ thin films can be modulated during the deposition and post-annealing processes. The ability to control these properties underscores the potential of β-Ga₂O₃ for advanced applications in high-performance high-power devices and optoelectronic devices such as deep ultraviolet photodetectors. Full article

Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) is a conductive water-processable polymer with many important applications in organic electronics. The electrical conductivity of PEDOT:PSS layers is very diverse and can be changed by changing the processing and post-deposition conditions, e.g., by using different solvent additives, doping or modifying the physical conditions of the layer deposition. Despite many years of intensive research on the relationship between the microstructure and properties of these layers, there are still gaps in our knowledge, especially with respect to the detailed understanding of the charge carrier transport mechanism in organic semiconductor thin films. In this work, we investigate the effect of acid doping of PEDOT:PSS thin films on the intra-chain and inter-chain conductivity by developing a model that treats PEDOT:PSS as a nanocomposite material. This model is based on the effective medium theory and uses the percolation theory equation for the electrical conductivity of a mixture of two materials. Here its implementation assumes that the role of the highly conductive material is attributed to the intra-chain conductivity of PEDOT and its quantitative contribution is determined based on the optical Drude–Lorentz model. While the weaker inter-chain conductivity is assumed to originate from the weakly conductive material and is determined based on electrical measurements using the van der Pauw method and coherent nanostructure-dependent analysis. Our studies show that doping with methanesulfonic acid significantly affects both types of conductivity. The intra-chain conductivity of PEDOT increases from 260 to almost 400 Scm⁻¹. Meanwhile, the inter-chain conductivity increases by almost three orders of magnitude, reaching a critical state, i.e., exceeding the percolation threshold. The observed changes in electrical conductivity due to acid doping are attributed to the flattening of the PEDOT/PSS gel nanoparticles. In the model developed here, this flattening is accounted for by the inclusion shape factor. Full article

Cobalt-doped iron disulfide (FeS₂) thin films were synthesized via chemical bath deposition (CBD) followed by annealing at 450 °C, yielding phase-pure pyrite structures with multifunctional properties. A deposition temperature of 95 °C is critical for promoting Co incorporation, suppressing sulphur vacancies, and achieving structural stabilization of the film. After annealing, the dendritic morphologies transformed into compact quasi-spherical nanoparticles (~100 nm), which enhanced the crystallinity and optoelectronic performance of the films. The films exhibited strong absorption (>50%) in the visible and near-infrared regions and tunable direct bandgaps (1.14 to 0.96 eV, within the optimal range for single-junction solar cells. Electrical characterization revealed a fourth-order increase in conductivity after annealing (up to 4.78 Ω⁻¹ cm⁻¹) and confirmed stable p-type behavior associated with Co²⁺-induced acceptor states and defect passivation. These results demonstrate that CBD enabled the fabrication of Co-doped FeS₂ thin films with synergistic structural, electrical, and optical properties. The integration of earth-abundant elements and tunable electronic properties makes these films promising absorber materials for the next-generation photovoltaic devices. Full article

This study investigates the influence of post-deposition thermal annealing temperature on the crystal structure, chemical composition, and electrical performance of solution-processed indium oxide (In₂O₃) thin films. Based on thermogravimetric analysis (TGA) of the precursor solution, annealing temperatures of 350, 450, and 550 °C were adopted. The resulting In₂O₃ films were characterized using ultraviolet–visible (UV–Vis) spectroscopy, atomic force microscopy (AFM), Raman spectroscopy, and Hall-effect measurements to evaluate their optical, morphological, crystalline polymorphism, and electrical properties. The results revealed that the film annealed at 450 °C exhibited a field-effect mobility of 4.28 cm²/V·s and an on/off current ratio of 2.15 × 10⁷. The measured hysteresis voltages were 3.11, 1.80, and 0.92 V for annealing temperatures of 350, 450, and 550 °C, respectively. Altogether, these findings indicate that an annealing temperature of 450 °C provides an optimal balance between the electrical performance and device stability for In₂O₃-based thin-film transistors (TFTs), making this condition favourable for high-performance oxide electronics. Full article

Silver thin films are widely utilized in plasmonic, electronic, and catalytic devices due to their excellent conductivity, optical properties, and surface activity. However, the nanostructure and performance of Ag films are highly dependent on deposition parameters, particularly during radio-frequency magnetron sputtering (RF-MS). In this study, we systematically investigate the effects of RF power, sputtering time, and substrate type on the growth behavior, crystallinity, and electrical conductivity of Ag films. Optical emission spectroscopy (OES) and Langmuir probe diagnostics were employed to analyze the plasma environment, revealing the evolution of electron temperature and plasma density with varying RF powers. Structural characterizations using XRD, SEM, and AFM demonstrate that higher RF power results in reduced grain size, increased film density, and improved crystallinity, while deposition time influences film thickness and grain coalescence. Substrate material also plays a key role, with Cu substrates promoting better crystallinity due to improved lattice matching. Electrical measurements show that denser films with larger grains exhibit lower sheet resistance. These findings provide a comprehensive understanding of the plasma–film interplay and offer strategic insights for optimizing silver nanofilms in high-performance optoelectronic and catalytic systems. Full article

In the era of artificial intelligence, neuromorphic devices that simulate brain functions have received increasingly widespread attention. In this paper, an artificial neural synapse device based on ZnAlSnO thin-film transistors was fabricated, and its electrical properties were tested: the current-switching ratio was 1.18 × 10⁷, the subthreshold oscillation was 1.48 V/decade, the mobility was 2.51 cm²V⁻¹s⁻¹, and the threshold voltage was −9.40 V. Stimulating artificial synaptic devices with optical signals has the advantages of fast response speed and good anti-interference ability. The basic biological synaptic characteristics of the devices were tested under 365 nm light stimulation, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), short-term plasticity (STP), and long-term plasticity (LTP). This device shows good synaptic plasticity. In addition, by changing the gate voltage, the excitatory postsynaptic current of the device at different gate voltages was tested, two different logical operations of “AND” and “OR” were achieved, and the influence of different synaptic states on memory was simulated. This work verifies the application potential of the device in the integrated memory and computing architecture, which is of great significance for promoting the high-quality development of neuromorphic computing hardware. Full article

Aluminum nitride (AlN) is a material of wide interest in the optoelectronics and high-power electronics industry. The deposition of AlN thin films at elevated temperatures is a well-established process, but its implementation on flexible substrates with conductive oxides, such as ITO-glass or ITO-PET, poses challenges due to the thermal degradation of these materials. In this work, the deposition and characterization of AlN thin films by reactive sputtering at a low temperature (RT and 100 °C) on ITO-glass and ITO-PET substrates are presented. The structural, optical, and electrical properties of the samples have been analysed as a function of the sputtering power and the deposition temperature. XRD analysis revealed the absence of peaks of crystalline AlN, indicative of the formation of an amorphous phase. EDX measurements performed on the ITO-glass substrate with a radiofrequency power applied to the Al target of 175 W confirmed the presence of Al and N, corroborating the deposition of AlN. SEM analyses showed the formation of homogeneous and compact layers, and transmission optical measurements revealed a bandgap of around 5.82 eV, depending on the deposition conditions. Electrical resistivity measurements indicated an insulating character. Overall, these findings confirm the potential of amorphous AlN for applications in flexible optoelectronic devices. Full article

Cerium-doped zinc cobaltite spinel thin films, $\mathrm{Z}\mathrm{n}{\mathrm{C}\mathrm{e}}_{\mathrm{x}}{\mathrm{C}\mathrm{o}}_{2-\mathrm{x}}{\mathrm{O}}_4 (0.00\le \mathrm{x}\le 0.05)$, were synthesized via spray pyrolysis, and their structural, morphological, optical, and electrical properties were analyzed. X-ray diffraction (XRD) confirmed a cubic spinel structure with a predominant (311) orientation across all compositions. Raman spectroscopy further verified this phase, revealing four active vibrational modes at 180 cm⁻¹, 470 cm⁻¹, 515 cm⁻¹, and 682 cm⁻¹. Scanning electron microscopy (SEM) indicated a uniform grain distribution, while energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of Ce, Zn, Co, and O. Optical measurements revealed two distinct bandgaps, decreasing from 2.32 eV to 2.20 eV for the lower-energy transition and from 3.38 eV to 3.18 eV for the higher-energy transition. Hall effect measurements confirmed p-type conductivity in all films. Electrical analysis showed a reduction in resistivity, from 280.3 Ω·cm to 15.4 Ω·cm, along with an increase in carrier concentration from 1.15 × 10¹⁶ cm⁻³ to 8.15 × 10¹⁷ cm⁻³ with higher Ce content. These results demonstrate that spray pyrolysis is a cost-effective and scalable method for producing Ce-doped ZnCo₂O₄ thin films with tunable properties, making them suitable for electronic and optoelectronic applications. Full article