Search Results (81)

Aiming at the problems of low withstand voltage and poor RF performance of traditional HEMT devices, a new AlGaN/GaN high electron mobility transistor device with a π-gate (NπGS HEMT) is designed in this paper. The new structure incorporates a π-gate design along with a PN-junction field plate and an AlGaN back-barrier layer. The device is modeled and simulated in Silvaco TCAD 2015 software and compared with traditional t-gate HEMT devices. The results show that the NπGS HEMT has a significant improvement in various characteristics. The new structure has a higher peak transconductance of 336 mS·mm⁻¹, which is 13% higher than that of the traditional HEMT structure. In terms of output characteristics, the new structure has a higher saturation drain current of 0.188 A/mm. The new structure improves the RF performance of the device with a higher maximum cutoff frequency of about 839 GHz. The device also has a better performance in terms of voltage withstand, exhibiting a higher breakdown voltage of 1817 V. These results show that the proposed new structure could be useful for future research on high voltage withstand and high RF HEMT devices. Full article

Diamond is an attractive substrate candidate for GaN high-electron-mobility transistors (HEMT) to enhance heat dissipation due to its exceptional thermal conductivity. However, the thermal boundary resistance (TBR) at the GaN–diamond interface poses a significant bottleneck to heat transport, exacerbating self-heating and limiting device performance. In this work, TCAD simulations were employed to systematically investigate the effects of thermal boundary layer (TBL) thickness (d_TBL) and thermal conductivity (κ_TBL) on the electrothermal behavior of GaN-on-diamond HEMTs. Results show that increasing the TBL thickness (5–20 nm) or decreasing its thermal conductivity (0.1–1.0 W/(m·K)) leads to elevated hotspot temperatures and degraded electron mobility, resulting in a notable deterioration of I–V characteristics. The nonlinear dependence of device performance on κ_TBL is attributed to Fourier’s law, where heat flux is inversely proportional to thermal resistance. Furthermore, the co-analysis of substrate thermal conductivity and interfacial quality reveals that interface TBR has a more dominant impact on device behavior than substrate conductivity. Remarkably, devices with low thermal conductivity substrates and optimized interfaces can outperform those with high-conductivity substrates but poor interfacial conditions. These findings underscore the critical importance of interface engineering in thermal management of GaN–diamond HEMTs and provide a theoretical foundation for future work on phonon transport and defect-controlled thermal interfaces. Full article

This study systematically investigates the effects of trap concentration on self-heating and terahertz (THz) responses in GaN HEMTs using Sentaurus TCAD. Traps, inherently unavoidable in semiconductors, can be strategically introduced to engineer specific energy levels that establish competitive dynamics between the electron momentum relaxation time and the carrier lifetime. A simulation-based exploration of this mechanism provides significant scientific value for enhancing device performance through self-heating mitigation and THz response optimization. An AlGaN/GaN heterojunction HEMT model was established, with trap concentrations ranging from 0 to $5\times {10}^{17} {\mathrm{c}\mathrm{m}}^{-3}$. The analysis reveals that traps significantly enhance channel current (achieving 3× gain at $1\times 10^{17} {\mathrm{c}\mathrm{m}}^{-3}$) via new energy levels that prolong carrier lifetime. However, elevated trap concentrations (>$1\times {10}^{16} {\mathrm{c}\mathrm{m}}^{-3}$) exacerbate self-heating-induced current collapse, reducing the min-to-max current ratio to 0.9158. In THz response characterization, devices exhibit a distinct DC component (${\mathrm{U}}_{\mathrm{d}\mathrm{c}}$) under non-resonant detection ($\mathsf{\omega }\mathsf{\tau }\ll 1$). At a trap concentration of $1\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$, ${\mathrm{U}}_{\mathrm{d}\mathrm{c}}$ peaks at $0.12 \mathrm{V}$ when ${\mathrm{V}}_{\mathrm{g}}\mathrm{D}\mathrm{C}=-7.8 \mathrm{V}$. Compared to trap-free devices, a maximum response attenuation of 64.89% occurs at ${\mathrm{V}}_{\mathrm{g}}\mathrm{D}\mathrm{C}=-4.9 \mathrm{V}$. Furthermore, ${\mathrm{U}}_{\mathrm{d}\mathrm{c}}$ demonstrates non-monotonic behavior with concentration, showing local maxima at $4\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$ and $7\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$, attributed to plasma wave damping and temperature-gradient-induced electric field variations. This research establishes trap engineering guidelines for GaN HEMTs: a concentration of $4\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$ optimally enhances conductivity while minimizing adverse impacts on both self-heating and the THz response, making it particularly suitable for high-sensitivity terahertz detectors. Full article

A dual Al₂O₃ MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cutoff frequency (f_T) and 92% improvements in maximum oscillation frequency (f_max) compared to conventional HEMTs (from 7.1 GHz to 13.1 GHz and 17.5 GHz to 33.6 GHz, respectively). As for direct-current characteristics, a remarkable reduction in off-state gate leakage current and a 26% enhancement in the maximum saturation drain current (from 519 mA·mm⁻¹ to 658 A·mm⁻¹) are manifested in HEMTs with new structures. The maximum transconductance (g_m) is also raised from 209 mS·mm⁻¹ to 246 mS·mm⁻¹. Correspondingly, almost unchanged gate–source capacitance curves and gate–drain capacitance curves are also discussed to explain the electrical characteristic mechanism. These results indicate the superiority of using a dual Al₂O₃ MIS gate structure in GaN-based HEMTs to promote the RF and DC performance, providing a reference for further development in a miniwatt antenna amplifier and sub-6G frequencies of operation. Full article

We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room temperature. Their architecture enables straightforward scaling to two-dimensional formats, paving the way for terahertz focal plane arrays (FPAs). In particular, for one detector type, a fully realized THz FPA has been demonstrated in this paper. Theoretical and experimental characterizations are provided for both single-pixel detectors (0.1–1.5 THz) and the FPA (0.1–1.1 THz). The broadband single detectors achieve optical sensitivities exceeding 20 mA/W up to 1 THz and NEP values below 100 pW/$\sqrt{\mathrm{Hz}}$. The best optical NEP is below 10 pW/$\sqrt{\mathrm{Hz}}$ at 175 GHz. The reported sensitivity and NEP values were achieved including antenna and optical coupling losses, underlining the excellent overall performance of the detectors. Full article

We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN and the conduction channel is closed. Under UV illumination, the depletion region shrinks to just beneath the AlGaN/GaN interface and the 2DEG recovers. The retraction distance of the depletion region during device turn-on operation is comparable to the thickness of the AlGaN barrier layer, which is an order of magnitude smaller than that in the conventional p-GaN/AlGaN/GaN PT, whose retraction distance spans the entire GaN channel layer. Consequently, the proposed device demonstrates significantly enhanced weak-light detection capability and improved switching speed. Silvaco Atlas simulations reveal that under a weak UV intensity of 100 nW/cm², the proposed device achieves a photocurrent density of 1.68 × 10⁻³ mA/mm, responsivity of 8.41 × 10⁵ A/W, photo-to-dark-current ratio of 2.0 × 10⁸, UV-to-visible rejection ratio exceeding 10⁸, detectivity above 1 × 10¹⁹ cm·Hz^1/2/W, and response time of 0.41/0.41 ns. The electron concentration distributions, conduction band variations, and 2DEG recovery behaviors in both the conventional and novel structures under dark and weak UV illumination are investigated in depth via simulations. Full article

This paper presents two cryogenic low-noise amplifiers (LNAs) based on the WIN’s 0.18 $\mathrm{\mu }$m gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process designed for radio telescope receivers. Discrete transistors with gate peripheries spanning 50–600 $\mathrm{\mu }$m were DC-characterized at 290 K and 15 K, respectively. The LNAs underwent on-chip noise characterization under 15 K using a Y-factor measurement setup, which integrated a calibrated noise source and a noise figure analyzer. This approach directly quantified the noise temperature—critical metrics for radio telescope receiver front-ends. The top-performing LNA variant identified through on-chip characterization was packaged and evaluated in a cryogenic test-bed. This LNA, spanning a bandwidth of 0.3–15 GHz, demonstrated a gain of 26 dB and a minimum noise temperature of 6 K when operated at an ambient temperature of 15 K. In contrast, a second LNA architecture, tested solely on-chip, demonstrated a gain of 30 dB and a minimum noise temperature of 15 K across the 0.3–7 GHz range. Full article

The deployment of fifth-generation (5G) and beyond-5G wireless communication systems necessitates advanced transceiver architectures to support high data rates, spectrum efficiency, and energy-efficient designs. This paper presents a highly adaptive reconfigurable receiver front-end (HARRF) designed for 5G and satellite applications, integrating a switchable low noise amplifier (LNA) and a single pole double throw (SPDT) switch. The HARRF architecture supports both X-band (8–12 GHz) and K/Ka-band (23–28 GHz) operations, enabling seamless adaptation between radar, satellite communication, and millimeter-wave (mmWave) 5G applications. The proposed receiver front-end employs a 0.15 μ$\mathrm{m}$ pseudomorphic high electron mobility transistor (pHEMT) process, optimised through a three-stage cascaded LNA topology. A switched-tuned matching network is utilised to achieve reconfigurability between X-band and K/Ka-band. Performance evaluations indicate that the X-band LNA achieves a gain of 23–27 dB with a noise figure below 7 dB, whereas the K/Ka-band LNA provides 23–27 dB gain with a noise figure ranging from 2.3–2.6 dB. The SPDT switch exhibits low insertion loss and high isolation, ensuring minimal signal degradation across operational bands. Network analysis and scattering parameter extractions were conducted using advanced design system (ADS) simulations, demonstrating superior return loss, power efficiency, and impedance matching. Comparative analysis with state-of-the-art designs shows that the proposed HARRF outperforms existing solutions in terms of reconfigurability, stability, and wideband operation. The results validate the feasibility of the proposed reconfigurable RF front-end in enabling efficient spectrum utilisation and energy-efficient transceiver systems for next-generation communication networks. Full article

Thermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In this study, nanocrystalline diamond (NCD) passivated high-electron mobility transistors (HEMTs) based on AlGaN/GaN-on-Si heterostructures were fabricated with a gate length of 2 μm. The NCD film has a thickness of 250–383 nm and a uniform morphology with a grain size of mostly ~240 nm. Compared to the devices without NCD passivation, those devices with the NCD passivation layer show an increase in current density from 447 mA/mm to 555 mA/mm, a reduction in on-resistance from 20 Ω·mm to 13 Ω·mm, and a noticeable suppression of current degradation at high-drain voltages. Junction temperature measurements under varied output power densities reveal a 36% improvement in heat dissipation efficiency with the NCD passivation. These results fully demonstrate the promising potential of NCD for enhancing heat dissipation in high-power GaN devices. Full article

This paper demonstrates that potential oscillations in various frequency bands of monolithic microwave integrated circuits (MMICs) can be effectively suppressed using well-designed dual RC traps in the bias networks. The proposed approach is applied to the design and development of a highly stable W-band low-noise amplifier (LNA) MMIC for high-precision millimeter-wave applications. The amplifier is fabricated using the 0.1 µm GaAs pHEMT process from Win Semiconductors. The cascaded four-stage design consists of two low-noise-optimized stages, followed by two high-gain-tuned stages. Stability is enhanced through the integration of dual RC traps in the bias networks, which is rigorously evaluated using stability factors (K and μ) and network determinant function (NDF) encirclement analysis. In low-noise mode, the developed low-noise amplifier MMIC achieves a noise figure of 5.6−6.2 dB and a linear gain of 17.8−19.8 dB over the 90−98 GHz frequency range, while only consuming a DC power of 96 mW. In high-gain mode, it has a noise figure of 6.2−6.9 dB and a linear gain of 19.8−21.7 dB. Full article

This work reports the concept of a shunt negative feedback technique for implementing a millimeter-wave wideband low-noise amplifier. The proposed shunt negative feedback network consists of a resistor–capacitor–inductor configuration. The proposed feedback network can achieve simultaneous noise and input matching (SNIM) over a wide frequency range by adjusting the values of the resistor–capacitor–inductor configuration based on numerical analysis. By adopting the SNIM-based gain core as the first stage of the amplifier, the simulation results of the three-stage low-noise amplifier in a 150-nm GaAs pHEMT process achieve a gain of 15.6–18.6 dB and a noise figure of 1.05–2.8 dB in the frequency range of 13–33 GHz, respectively, while dissipating 99 mW. Full article

The trapping mechanism at the AlGaN/GaN interface in the p-GaN high electron mobility transistors (HEMTs) and its impact on the turn-on characteristics of direct-coupled FET logic (DCFL) inverters were investigated across various supply voltages (V_DD) and test frequencies (f_m). The frequency-conductance method identified two trap states at the AlGaN/GaN interface (trap activation energy E_c-E_T ranges from 0.345 eV to 0.363 eV and 0.438 eV to 0.47 eV). As V_DD increased from 1.5 V to 5 V, the interface traps captured more electrons, increasing the channel resistance (R_channel) and drift-region resistance (R_drift) of the p-GaN HEMTs and raising the low-level voltage (V_OL) from 0.56 V to 1.01 V. At f_m = 1 kHz, sufficient trapping and de-trapping led to a delay of 220 µs and a V_OL instability of 320 mV. Additionally, as f_m increased from 1 kHz to 200 kHz, a positive shift in the threshold voltage of p-GaN HEMTs occurred due to the dominance of trapping. This shift caused V_OL to rise from 1.02 V to 1.40 V and extended the fall time (t_fall) from 153 ns to 1 µs. This investigation enhances the understanding of DCFL GaN inverters’ behaviors from the perspective of device physics on power switching applications. Full article

In this work, we present the novel application of SiN_x stress-engineering techniques for the suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors (HEMTs), accompanied by a comprehensive analysis of the underlying mechanisms. The compressive stress SiN_x passivation significantly enhances the barrier height at the heterojunction beneath the gate, maintaining it above the quasi-Fermi level even as V_ds rises to 20 V. As a result, in GaN devices with a gate length of 160 nm, the devices with compressive stress SiN_x passivation exhibit significantly lower drain-induced barrier lowering (DIBL) factors of 2.25 mV/V, 2.56 mV/V, 4.71 mV/V, and 3.84 mV/V corresponding to drain bias voltages of 5 V, 10 V, 15 V, and 20 V, respectively. Furthermore, as V_ds increases, there is an insignificant degradation in transconductance, subthreshold swing, leakage current, or output conductance. In contrast, the devices with stress-free passivation show relatively higher DIBL factors (greater than 20 mV/V) and substantial degradation in pinch-off performance and output characteristics. These results demonstrate that the SiN_x stress-engineering technique is an attractive technique to facilitate high-performance and high-reliability GaN-based HEMTs for radio frequency (RF) electronics applications. Full article

In this paper, it is demonstrated that the AlGaN high electron mobility transistor (HEMT) based on silicon wafer exhibits excellent high-temperature performance. First, the output characteristics show that the ratio of on-resistance (R_ON) only reaches 1.55 when the working temperature increases from 25 °C to 150 °C. This increase in R_ON is caused by a reduction in optical phonon scattering-limited mobility (μ_OP) in the AlGaN material. Moreover, the device also displays great high-performance stability in that the variation of the threshold voltage (ΔV_TH) is only 0.1 V, and the off-state leakage current (I_D,off-state) is simply increased from 2.87 × 10⁻⁵ to 1.85 × 10⁻⁴ mA/mm, under the operating temperature variation from 25 °C to 200 °C. It is found that the two trap states are induced at high temperatures, and the trap state densities (D_T) of 4.09 × 10¹²~5.95 × 10¹² and 7.58 × 10¹²~1.53 × 10¹³ cm⁻² eV⁻¹ are located at E_T in a range of 0.46~0.48 eV and 0.57~0.61 eV, respectively, which lead to the slight performance degeneration of AlGaN HEMT. Therefore, this work provides experimental and theoretical evidence of AlGaN HEMT for high-temperature applications, pushing the development of ultra-wide gap semiconductors greatly. Full article

Cystic fibrosis (CF) is a hereditary disease characterized by the progression of respiratory disorders, especially in adult patients. The purpose of the study was to identify volatile organic compounds (VOCs) as predictors of respiratory dysfunction, chronic respiratory infections of Staphylococcus aureus, Pseudomonas aeruginosa, Burkholderia cepacia, and VOCs associated with severe genotype and highly effective modulator treatment (HEMT). Exhaled breath samples from 102 adults with CF were analyzed using PTR-TOF-MS, obtained during a forced expiratory maneuver and normal quiet breathing. Using cross-validation and building gradient boosting classifiers (XGBoost), the importance of VOCs for functional and clinical outcomes was determined. The presence of the previously identified VOCs indole, phenol, and dimethyl sulfide were metabolic outcomes associated with impaired respiratory function. New VOCs associated with respiratory disorders were methyl acetate, carbamic acid, 1,3-Pentadiene, and 2,3-dimethyl-2-butene; VOCs associated with the above mentioned respiratory pathogens were non-differentiable nitrogen-containing organic compounds m/z = 47.041 (CH5NO)+ and m/z = 44.044 (C2H5NH+), hydrocarbons (cyclopropane, propene) and methanethiol; and VOCs associated with severe CFTR genotype were non-differentiable VOC m/z = 281.053. No significant features associated with the use of HEMT were identified. Early non-invasive determination of VOCs as biomarkers of the severity of CF and specific pathogenic respiratory flora could make it possible to prescribe adequate therapy and assess the prognosis of the disease. However, further larger standardized studies are needed for clinical use. Full article