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Keywords = light absorbing layer (or film)

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14 pages, 2763 KB  
Article
Sol-Gel Derived Dual-Functional Organosilicone Coating for Enhanced Solar Panel Performance
by Jianping Huang, Xinyue Liu, Junjie Liu, Ling Yang, Jiang Li, Ziya Bai, Qingfei Zhao, Jinzhi Tong and Tiezheng Lv
Gels 2026, 12(4), 316; https://doi.org/10.3390/gels12040316 - 8 Apr 2026
Viewed by 881
Abstract
In this study, a non-typical luminescent organosilicone was synthesized through a click reaction and used as a cross-linker to cure hydroxyl-terminated dimethylsilicone oil at room temperature via the sol–gel process, followed by application as a coating on a glass surface. This organosilicone film [...] Read more.
In this study, a non-typical luminescent organosilicone was synthesized through a click reaction and used as a cross-linker to cure hydroxyl-terminated dimethylsilicone oil at room temperature via the sol–gel process, followed by application as a coating on a glass surface. This organosilicone film functions effectively as a luminescent down-shifting (LDS) material. Additionally, the presence of methyl groups and voids in the structure imparts a low refractive index, allowing it to serve as an anti-reflective (AR) layer. Optical and structural analyses on organosilicone-coated glass samples were conducted, and the dual-functional layer was applied to the glass cover of a perovskite solar panel to evaluate its performance. The coating not only enhanced light transmission as an AR layer but also converted UV light into blue light, which was absorbed by the solar cell. The results indicated improved solar panel performance, particularly in short-circuit current (Isc), external quantum efficiency (EQE) in the UV wavelength range, and overall efficiency. Overall, this material is a promising candidate for solar panel applications owing to maximized UV absorption for LDS, preserved transparency of the top cover glass, and room-temperature gelation, which facilitates repair of the dual-functional coating. Full article
(This article belongs to the Section Gel Analysis and Characterization)
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23 pages, 1384 KB  
Review
Strategies for Photoelectrochemical Splitting of Water
by Brisa Alejandra Ortiz, Martin Trejo-Valdez, Puja Kumari and Carlos Torres-Torres
Int. J. Mol. Sci. 2026, 27(7), 3015; https://doi.org/10.3390/ijms27073015 - 26 Mar 2026
Cited by 2 | Viewed by 1330
Abstract
The photoelectrochemical splitting (PEC) of water provides a direct route to converting solar energy into storable chemical fuels. When illuminated, a semiconductor photoelectrode can absorb light and generate electron-hole pairs, which participate in interfacial redox reactions at the semiconductor-electrolyte junction. Therefore, to achieve [...] Read more.
The photoelectrochemical splitting (PEC) of water provides a direct route to converting solar energy into storable chemical fuels. When illuminated, a semiconductor photoelectrode can absorb light and generate electron-hole pairs, which participate in interfacial redox reactions at the semiconductor-electrolyte junction. Therefore, to achieve high-performance PEC, photoelectrodes with optimized optical absorption and charge have been explored. This review analyzes recent fabrication strategies used to design photoelectrodes for the PEC dissociation of water. Physical fabrication techniques, including pulsed laser deposition, magnetron sputtering, and physical vapor deposition, allow for precise control of film thickness, crystallinity, and defect density, critical parameters for efficient charge transport. Typically, in physical methods, reported photocurrent densities span from ~10−2 to 101 mAcm−2, depending on the semiconductor material, nanostructure design, and interfacial engineering strategies. Chemical synthesis methods, such as hydrothermal growth, successive ion layer adsorption and reaction, and microemulsion techniques, provide greater compositional flexibility and enable controlled doping, surface functionalization, and the formation of nanostructured morphologies. Finally, hybrid fabrication strategies integrate physical and chemical processes within a single synthesis framework to combine structural precision with compositional tuning capabilities. These approaches enable the development of advanced architecture such as heterojunctions, core–shell nanostructures, and catalyst-modified interfaces, which enhance light absorption and optimize interfacial transfer. Furthermore, theoretical and computational tools are here analyzed as complementary approaches that guide the rational design and optimization of photoelectrochemical materials and devices. Full article
(This article belongs to the Special Issue Recent Advances in Electrochemical-Related Materials)
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12 pages, 2453 KB  
Article
Lightweight Ultra-Wideband Absorbing Metamaterials Based on Multi-Dimensional Structural Design
by Aixiong Ge, Shaobo Qu and Baocai Xu
Materials 2026, 19(4), 803; https://doi.org/10.3390/ma19040803 - 19 Feb 2026
Cited by 1 | Viewed by 1005
Abstract
Addressing the technical bottlenecks of excessive surface density in traditional magnetic metal powder absorbers and excessive thickness in conventional foam-based absorbers, this study proposes a novel lightweight, ultra-wideband microwave-absorbing metamaterial. This metamaterial, through multi-layer and multi-dimensional structural design, has constructed a composite structure [...] Read more.
Addressing the technical bottlenecks of excessive surface density in traditional magnetic metal powder absorbers and excessive thickness in conventional foam-based absorbers, this study proposes a novel lightweight, ultra-wideband microwave-absorbing metamaterial. This metamaterial, through multi-layer and multi-dimensional structural design, has constructed a composite structure composed of a resistive film frequency-selective surface, a foam wave-absorbing medium layer and a reflective layer, achieving the controllable regulation of microwave absorption performance and the integration of structure and function. The research results show that the fabricated absorbing metamaterial achieves efficient electromagnetic wave absorption over a wide frequency band of 94 GHz under the ultra-light and ultra-thin conditions with a density as low as 0.078 g/cm3 and a thickness of only 4.9 mm. This study provides an effective design concept and solution for developing new lightweight, thin-layer, wide-band, and highly microwave-absorbing materials. Full article
(This article belongs to the Section Materials Physics)
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11 pages, 1693 KB  
Article
Unlocking the Potential of Cd-Free SnS2 Electron Transport Layer for High-Efficiency Sb2(S,Se)3 Solar Cells: A Numerical Simulation Study
by Xiaodong Zheng, Muhammad Ishaq, Jianwen Ai and Wahab Ali Shah
Electronics 2025, 14(24), 4926; https://doi.org/10.3390/electronics14244926 - 16 Dec 2025
Viewed by 617
Abstract
Cadmium-free buffer layers are pivotal for the sustainable development of thin-film photovoltaics. This work numerically investigates SnS2 as a high-performance, environmentally benign alternative to CdS for antimony selenosulfide (Sb2(S,Se)3) solar cells using AFORS-HET software. The SnS2/Sb [...] Read more.
Cadmium-free buffer layers are pivotal for the sustainable development of thin-film photovoltaics. This work numerically investigates SnS2 as a high-performance, environmentally benign alternative to CdS for antimony selenosulfide (Sb2(S,Se)3) solar cells using AFORS-HET software. The SnS2/Sb2(S,Se)3 heterojunction exhibits a significantly lower conduction band offset (CBO ≈ 0.23 eV) than its CdS counterpart (CBO ≈ 0.49 eV), which is identified as the primary factor for suppressed interface recombination and enhanced electron injection efficiency. A comprehensive optimization strategy is presented: tuning the S content in Sb2(S,Se)3 to 40% optimizes the trade-off between band gap widening and hole transport barrier at the ETL/absorber interface; adjusting the absorber thickness to 340 nm balances light absorption and carrier collection efficiency; and elevating the SnS2 carrier concentration to 1021 cm−3 strengthens the built-in potential and induces a beneficial hole-blocking “spike” at the front contact. The synergistically optimized device achieves a power conversion efficiency (PCE) of 10.39%, a substantial improvement over the 7.56% efficiency of the CdS-based reference cell in our simulation framework. Full article
(This article belongs to the Section Optoelectronics)
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14 pages, 3876 KB  
Article
Effect of Screen Printing Methods on Titanium Dioxide Films Modified with Silver Nanoparticles to Improve Dye-Sensitized Solar Cell Performance
by Jenn-Kai Tsai, Li-Jung Liu, Yu-Jie Liao, Wei-Ming Huang, Tian-Chiuan Wu, Kao-Wei Min and Teen-Hang Meen
Coatings 2025, 15(12), 1421; https://doi.org/10.3390/coatings15121421 - 4 Dec 2025
Viewed by 776
Abstract
Dye-sensitized solar cells (DSSCs) are considered a prospective alternative to silicon-based solar cells due to their lower production cost and simpler fabrication process than conventional solar cells. DSSCs’ adjustable optical properties enable them to function effectively under diverse illumination conditions, making them ideal [...] Read more.
Dye-sensitized solar cells (DSSCs) are considered a prospective alternative to silicon-based solar cells due to their lower production cost and simpler fabrication process than conventional solar cells. DSSCs’ adjustable optical properties enable them to function effectively under diverse illumination conditions, making them ideal for powering small electronic devices in indoor environments. In DSSCs, silver nanoparticles (AgNPs) are incorporated into titanium dioxide (TiO2) photoanodes due to their localized surface plasmon resonance (LSPR) effect, which enhances scattering and absorbing incident light and creates a strong electromagnetic field near the surface. There are diverse manufacturing methods for DSSCs, while the screen printing method is preferred because the area of the TiO2 film can be easily customized to effectively reduce human error and make the film highly stable. In this study, eight different stacked DSSC film structures were fabricated by adding AgNPs to TiO2 films. The TiO2 paste with a concentration of 3 mwt% (percentage by mass) of AgNPs performed best in this study. The photovoltaic performance was evaluated using power conversion efficiency (PCE), and the results showed that the AgNP-doped film on the surface of the fluorine-doped tin oxide (FTO) glass significantly improved the photovoltaic performance. The three layers of TiO2 doped with AgNPs achieved the highest PCE. PCE was increased since the TiO2 film containing AgNPs became thicker and closer to the FTO substrate. The PCE of DSSCs was compared using pure TiO2 NPs and the AgNP-doped TiO2 photoanode. The efficiency increased from 5.67% to a maximum of 6.13%. This enhanced efficiency, driven by LSPR and improved electron transport, confirms the viability of screen-printed, plasmon-enhanced photoanodes for high-efficiency DSSCs. Full article
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13 pages, 4248 KB  
Article
Luminescence Properties of Eu3+, Ba2+, and Bi3+ Co-Doped YVO4 for Wide-Spectrum Excitation
by Jianhua Huang, Cong Dong, Ping Huang, Wei Zhong, Yinqi Luo, Jianmin Li, Yibiao Hu, Wenjie Duan, Lingjia Qiu, Wenzhen Qin and Yu Xie
Nanomaterials 2025, 15(18), 1444; https://doi.org/10.3390/nano15181444 - 19 Sep 2025
Cited by 4 | Viewed by 1272
Abstract
YVO4 based phosphors have aroused extensive interest in the field of optoelectronics due to their good chemical stability and unique luminescence properties. However, commercialization of YVO4 phosphors requires high luminescence intensity, enhanced conversion efficiency, and a wide excitation spectrum. In this [...] Read more.
YVO4 based phosphors have aroused extensive interest in the field of optoelectronics due to their good chemical stability and unique luminescence properties. However, commercialization of YVO4 phosphors requires high luminescence intensity, enhanced conversion efficiency, and a wide excitation spectrum. In this work, Eu3+, Ba2+, Bi3+ co-doped YVO4 was prepared by the sol–gel method. The XRD of YVO4: 5%Eu3+, 5%Ba2+, 0.5%Bi3+ phosphor analysis confirms the pure tetragonal phase, with a fairly large size of approximately 100 nm for the optimal composition. And the SEM and TEM revealed well-dispersed spherical nanoparticles with sizes of 100–120 nm. The introduction of Ba2+ ions enhanced the luminescence intensity, while the incorporation of Bi3+ ions improved the excitation width of the phosphor. The resulting YVO4: 5%Eu3+, 5%Ba2+, 0.5%Bi3+ phosphor exhibited a 1.39-times broader excitation bandwidth and a 2.72-times greater luminescence intensity at 618 nm compared to the benchmark YVO4: 5% Eu3+ sample. Additionally, the transmittance of the films in the 350 nm to 800 nm region exceeded 85%. The YVO4: 5%Eu3+, 5%Ba2+, 0.5%Bi3+ film effectively absorbed ultraviolet light and converted it to red emission, enabling potential applications in solar cell window layers, dye-sensitized cell luminescence layers, and solar cell packaging glass. Full article
(This article belongs to the Section Physical Chemistry at Nanoscale)
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14 pages, 2994 KB  
Article
The Effect of Cs-Controlled Triple-Cation Perovskite on Improving the Sensing Performance of Deep-Ultraviolet Photodetectors
by Jun Seo Kim, Sangmo Kim and Hyung Wook Choi
Appl. Sci. 2025, 15(14), 7982; https://doi.org/10.3390/app15147982 - 17 Jul 2025
Cited by 1 | Viewed by 1742
Abstract
In this study, a UVC photodetector (PD) was fabricated by incorporating CsI into a conventional double-cation perovskite (FAMAPbI3) to enhance its stability. The device utilized a methylammonium iodide post-treatment solution to fabricate CsFAMAPbI3 perovskite thin films, which functioned as the [...] Read more.
In this study, a UVC photodetector (PD) was fabricated by incorporating CsI into a conventional double-cation perovskite (FAMAPbI3) to enhance its stability. The device utilized a methylammonium iodide post-treatment solution to fabricate CsFAMAPbI3 perovskite thin films, which functioned as the primary light-absorbing layer in an NIP structure composed of n-type SnO2 and p-type spiro-OMeTAD. Perovskite films were fabricated and analyzed as a function of the Cs concentration to optimize the Cs content. The results demonstrated that Cs doping improved the crystallinity and phase stability of the films, leading to their enhanced electron mobility and photodetection performance. The UVC PD with an optimum Cs concentration exhibited a responsivity of 58.2 mA/W and a detectivity of 3.52 × 1014 Jones, representing an approximately 7% improvement over conventional structures. Full article
(This article belongs to the Section Energy Science and Technology)
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34 pages, 6513 KB  
Article
Planar Electrically Large Structures of Carbon Nanotube Films with High Absorption and Shielding Performance in X-Band
by Apostolos Sotiropoulos, Athanasios Masouras, Hristos T. Anastassiu, Vassilis Kostopoulos and Stavros Koulouridis
Sensors 2025, 25(13), 3943; https://doi.org/10.3390/s25133943 - 25 Jun 2025
Viewed by 1733
Abstract
We consider light, high-absorbance, low-reflectance, electrically large layered sheet structures composed of thin carbon nanotube films. Such structures can be utilized in electromagnetic absorption and shielding applications in the X-band. They are of increasing interest in sensor-enabling technologies, stealth systems, and EMI shielding [...] Read more.
We consider light, high-absorbance, low-reflectance, electrically large layered sheet structures composed of thin carbon nanotube films. Such structures can be utilized in electromagnetic absorption and shielding applications in the X-band. They are of increasing interest in sensor-enabling technologies, stealth systems, and EMI shielding of electronic components. Especially in aerospace, this is crucial, as sensors are integral to aerospace engineering, enhancing the safety, efficiency, and performance of aircraft and spacecraft. To that end, sheets with carbon nanotube films embedded in a glass fiber polymer matrix are fabricated. The films have a thickness of around 70 μm. As shown, they cause a significant attenuation of the electromagnetic field. For shielding applications, a single-film sheet structure with total thickness of 1.65 mm presents an attenuation of around 25 dB in the transmission coefficient, while the attenuation can reach 37 dB for a two-film sheet structure with thickness of 1.8 mm. Shielding effectiveness performance is found to be greater than 35 dB for the two-film sheet structure. For applications requiring both high shielding and absorption, a two-layered structure with a thickness of 4.65 mm has been designed. The absorption, represented by the Loss Factor, is calculated to achieve values greater than 90%. The simulation results show good agreement with the measured data. The findings demonstrate a promising structure for materials suitable for sensor housings and smart electromagnetic environments where the suppression of electromagnetic interference is critical. In conclusion, the addition of carbon nanotube films, even at micrometer thicknesses, within a glass fiber polymer matrix significantly enhances both electromagnetic shielding and absorption performance. Full article
(This article belongs to the Special Issue Nanotechnology Applications in Sensors Development)
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18 pages, 2436 KB  
Article
Photoelectrochemical and Photocatalytic Properties of SnS/TiO2 Heterostructure Thin Films Prepared by Magnetron Sputtering Method
by Yaoxin Ding, Jiahao Leng, Mingyang Zhang and Jie Shen
Inorganics 2025, 13(7), 208; https://doi.org/10.3390/inorganics13070208 - 20 Jun 2025
Cited by 5 | Viewed by 2176
Abstract
Tin(II) sulfide(SnS)/titanium(IV) oxide (TiO2) heterostructure thin films were prepared by radio-frequency magnetron sputtering to investigate the enhancement effect of the formed heterojunction on the photocatalytic performance. By adjusting the sputtering time to vary the thickness of the SnS layer, the crystallinity [...] Read more.
Tin(II) sulfide(SnS)/titanium(IV) oxide (TiO2) heterostructure thin films were prepared by radio-frequency magnetron sputtering to investigate the enhancement effect of the formed heterojunction on the photocatalytic performance. By adjusting the sputtering time to vary the thickness of the SnS layer, the crystallinity and light-absorption properties of the light-absorbing layer and the quality of the heterojunction interface were effectively controlled, thereby optimizing the fabrication process of the heterojunction. It was found that when the SnS layer thickness was 244 nm and the TiO2 layer thickness was 225 nm, the heterostructure film exhibited optimal photoelectrochemical performance, generating the highest photocurrent of 3.03 µA/cm2 under visible light, which was 13.8 times that of a pure TiO2 film and 2.4 times that of a pure SnS film of the same thickness. Additionally, it demonstrated the highest degradation efficiency for methylene blue dye. The improved photoelectrochemical performance of the SnS/TiO2 heterostructure film can be primarily attributed to the following: (1) the incorporation of narrow-bandgap SnS effectively broadens the light-absorption range, improving visible-light harvesting; (2) the staggered band alignment between SnS and TiO2 forms a type-II heterojunction, significantly enhancing the charge carrier separation and transport efficiency. The present work demonstrated the feasibility of magnetron sputtering for constructing high-quality SnS/TiO2 heterostructures, providing insights into the design and fabrication of photocatalytic heterojunctions. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 3rd Edition)
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11 pages, 5145 KB  
Article
Island-like Perovskite Photoelectric Synaptic Transistor with ZnO Channel Layer Deposited by Low-Temperature Atomic Layer Deposition
by Jiahui Liu, Yuliang Ye and Zunxian Yang
Materials 2025, 18(12), 2879; https://doi.org/10.3390/ma18122879 - 18 Jun 2025
Viewed by 1245
Abstract
Artificial photoelectric synapses exhibit great potential for overcoming the Von Neumann bottleneck in computational systems. All-inorganic halide perovskites hold considerable promise in photoelectric synapses due to their superior photon-harvesting efficiency. In this study, a novel wavy-structured CsPbBr3/ZnO hybrid film was realized [...] Read more.
Artificial photoelectric synapses exhibit great potential for overcoming the Von Neumann bottleneck in computational systems. All-inorganic halide perovskites hold considerable promise in photoelectric synapses due to their superior photon-harvesting efficiency. In this study, a novel wavy-structured CsPbBr3/ZnO hybrid film was realized by depositing zinc oxide (ZnO) onto island-like CsPbBr3 film via atomic layer deposition (ALD) at 70 °C. Due to the capability of ALD to grow high-quality films over small surface areas, dense and thin ZnO film filled the gaps between the island-shaped CsPbBr3 grains, thereby enabling reduced light-absorption losses and efficient charge transport between the CsPbBr3 light absorber and the ZnO electron-transport layer. This ZnO/island-like CsPbBr3 hybrid synaptic transistor could operate at a drain-source voltage of 1.0 V and a gate-source voltage of 0 V triggered by green light (500 nm) pulses with low light intensities of 0.035 mW/cm2. The device exhibited a quiescent current of ~0.5 nA. Notably, after patterning, it achieved a significantly reduced off-state current of 10−11 A and decreased the quiescent current to 0.02 nA. In addition, this transistor was able to mimic fundamental synaptic behaviors, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term to long-term plasticity (STP to LTP) transitions, and learning-experience behaviors. This straightforward strategy demonstrates the possibility of utilizing neuromorphic synaptic device applications under low voltage and weak light conditions. Full article
(This article belongs to the Section Electronic Materials)
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14 pages, 4067 KB  
Article
Thin Films of PNDI(2HD)2T and PCPDTBT Polymers Deposited Using the Spin Coater Technique for Use in Solar Cells
by Michał Sładek, Patryk Radek, Magdalena Monika Szindler and Marek Szindler
Coatings 2025, 15(5), 603; https://doi.org/10.3390/coatings15050603 - 18 May 2025
Cited by 3 | Viewed by 1512
Abstract
Conductive polymers play a crucial role in the advancement of modern technologies, particularly in the field of organic photovoltaics (OPVs). Due to advantages such as flexibility, low specific weight, ease of processing, and low production costs, polymeric materials present an attractive alternative to [...] Read more.
Conductive polymers play a crucial role in the advancement of modern technologies, particularly in the field of organic photovoltaics (OPVs). Due to advantages such as flexibility, low specific weight, ease of processing, and low production costs, polymeric materials present an attractive alternative to traditional photovoltaic materials. This study investigates the properties of a polymer blend composed of PCPDTBT (donor) and PNDI(2HD)2T (acceptor), used as the active layer in bulk heterojunction (BHJ) solar cells. The motivation behind this research was the search for a novel n-type polymer material with potentially better properties than the commonly used P(NDI2OD-T2). Comprehensive characterization of thin films made from the individual polymers and their blend was conducted using Fourier Transform Infrared Spectroscopy (FTIR), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Ultraviolet-Visible Spectroscopy (UV-Vis), four-point probe conductivity measurements, and photovoltaic testing. The prepared films were continuous, uniform, and exhibited low surface roughness (Ra < 2.5 nm). Spectroscopic analysis showed that the blend absorbs light in a broad range of the spectrum, with slight bathochromic shifts compared to individual polymers. Electrical measurements indicated that the blend’s conductivity (9.1 µS/cm) was lower than that of pure PCPDTBT but higher than that of PNDI(2HD)2T, with an optical band gap of 1.34 eV. Photovoltaic devices fabricated using the blend demonstrated an average power conversion efficiency (PCE) of 6.45%, with a short-circuit current of 14.37 mA/cm2 and an open-circuit voltage of 0.89 V. These results confirm the feasibility of using PCPDTBT:PNDI(2HD)2T blends as active layers in BHJ solar cells and provide a promising direction for further optimization in terms of polymer ratio and processing conditions. Full article
(This article belongs to the Special Issue Recent Developments in Thin Films for Technological Applications)
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18 pages, 8684 KB  
Article
Harnessing Nanoplasmonics: Design Optimization for Enhanced Optoelectronic Performance in Nanocrystalline Silicon Devices
by Mohsen Mahmoudysepehr and Siva Sivoththaman
Micromachines 2025, 16(5), 540; https://doi.org/10.3390/mi16050540 - 30 Apr 2025
Cited by 3 | Viewed by 1461
Abstract
Nanoplasmonic structures have emerged as a promising approach to address light trapping limitations in thin-film optoelectronic devices. This study investigates the integration of metallic nanoparticle arrays onto nanocrystalline silicon (nc-Si:H) thin films to enhance optical absorption through plasmonic effects. Using finite-difference time-domain (FDTD) [...] Read more.
Nanoplasmonic structures have emerged as a promising approach to address light trapping limitations in thin-film optoelectronic devices. This study investigates the integration of metallic nanoparticle arrays onto nanocrystalline silicon (nc-Si:H) thin films to enhance optical absorption through plasmonic effects. Using finite-difference time-domain (FDTD) simulations, we systematically optimize key design parameters, including nanoparticle geometry, spacing, metal type (Ag and Al), dielectric spacer material, and absorber layer thickness. The results show that localized surface plasmon resonances (LSPRs) significantly amplify near-field intensities, improve forward scattering, and facilitate coupling into waveguide modes within the active layer. These effects lead to a measurable increase in integrated quantum efficiency, with absorption improvements reaching up to 30% compared to bare nc-Si:H films. The findings establish a reliable design framework for engineering nanoplasmonic architectures that can be applied to enhance performance in photovoltaic devices, photodetectors, and other optoelectronic systems. Full article
(This article belongs to the Special Issue Nanostructured Optoelectronic and Nanophotonic Devices)
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11 pages, 4127 KB  
Article
Optimizing Semiconductor Saturable Absorption Mirrors Using Subwavelength Dielectric Gratings for Fiber Lasers
by Chaoqun Wei, Xiansheng Jia, Hongmei Chen, Boyuan Liu, Ziyang Zhang and Cheng Jiang
Photonics 2025, 12(3), 213; https://doi.org/10.3390/photonics12030213 - 28 Feb 2025
Cited by 3 | Viewed by 1919
Abstract
Ultrafast fiber lasers have shown exceptional performance across various domains, including material processing, medical applications, and optoelectronic communication. The semiconductor saturable absorber mirror (SESAM) is a key enabler of ultrafast laser operation. However, the narrow wavelength range and limited modulation depth of conventional [...] Read more.
Ultrafast fiber lasers have shown exceptional performance across various domains, including material processing, medical applications, and optoelectronic communication. The semiconductor saturable absorber mirror (SESAM) is a key enabler of ultrafast laser operation. However, the narrow wavelength range and limited modulation depth of conventional SESAMs pose challenges to further advancing ultrafast fiber laser technology. To address these limitations, we explored the integration of guided mode resonance (GMR) effects to enhance light–matter interaction within the absorption layer. By incorporating subwavelength dielectric film gratings onto the cap layer of SESAMs, we excited GMR and formed a microcavity structure in conjunction with the distributed Bragg mirror (DBR). This design significantly improved the absorption efficiency of InAs quantum dots. The experimental results demonstrate that the modulation depth of the SESAM increased from 6.7% to 17.3%, while the pulse width was reduced by 2.41 times. These improvements facilitated the realization of a high-quality, stable ultrafast fiber laser. This study not only broadens the application potential of ultrafast lasers in diverse fields but also offers a practical pathway for advancing SESAM technology toward industrial-scale deployment. Full article
(This article belongs to the Special Issue Fiber Lasers: Recent Advances and Applications)
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21 pages, 2914 KB  
Article
The Numerical Simulation of a Non-Fullerene Thin-Film Organic Solar Cell with Cu2FeSnS4 (CFTS) Kesterite as a Hole Transport Layer Using SCAPS-1D
by Edson L. Meyer, Sindisiwe Jakalase, Azile Nqombolo, Nicholas Rono and Mojeed A. Agoro
Coatings 2025, 15(3), 266; https://doi.org/10.3390/coatings15030266 - 23 Feb 2025
Cited by 17 | Viewed by 3315
Abstract
Global warming and environmental pollution due to the overuse and exploitation of fossil fuels are the main issues affecting humans’ well-being. Solar energy is considered to be one of the most promising candidates for providing human society with a clean and sustainable energy [...] Read more.
Global warming and environmental pollution due to the overuse and exploitation of fossil fuels are the main issues affecting humans’ well-being. Solar energy is considered to be one of the most promising candidates for providing human society with a clean and sustainable energy supply. Thin-film organic solar cells (TFOSCs) use organic semiconductors as light-absorbing layer materials. TFOSCs have attracted wide research interest due to several advantages, such as easy fabrication, affordability, light weight, and environmental friendliness. Over the years, TFOSCs have been dominated by donor–acceptor blends based on polymer donors and fullerene acceptors. However, a new class of non-fullerene acceptors (NFAs) has gained prominence in TFOSCs owing to their significant improvement in the power conversion efficiency (PCE) of non-fullerene-based devices. In this study, the One-Dimensional Solar Cell Capacitance Simulator (SCAPS-1D) numerical simulator was used to study the performance of a device with a configuration of FTO/PDINO/PBDB-T/ITIC/CFTS/Al. Here, the PBDB-T/ITIC polymer blend represents poly[(2,6-(4,8-bis(5-(2 ethylhexyl)thiophen-2-yl)benzo [1,2-b:4,5-b]dithiophene)-co-(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)benzo [1,2-c:4,5-c]dithiophene-4,8-dione)] (PBDB)/3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone)-5,5,11,11-tetraki(4-hexylphenyl)-dithieno[2,3-d:2,3-d]-s-indaceno [1,2-b:5,6-b]dithiophene) (ITIC) and the non-fullerene acceptor (NFA) and serves as the absorber layer. The electron transport layer (ETL) was 2,9-Bis[3-(dimethyloxidoamino)propyl]anthra[2,1,9-def:6,5,10-d’e’f’]diisoquinoline-1,3,8,10(2H,9H)-tetrone (PDINO), and Cu2FeSnS4 (CFTS) was used as a hole transport layer (HTL). This research article aims to address the global challenges of environmental pollution and global warming caused by the overuse of fossil fuels by exploring alternative energy solutions. Upon optimization, the device achieved a power conversion efficiency (PCE) of 16.86%, a fill factor (FF) of 79.12%, a short-circuit current density (JSC) of 33.19 mA cm−2, and an open-circuit voltage (VOC) of 0.64 V. The results obtained can guide the fabrication of NFA-based TFOSCs in the near future. Full article
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11 pages, 2717 KB  
Article
Vapor-Assisted Method to Deposit Compact (CH3NH3)3Bi2I9 Thin Films for Bismuth-Based Planar Perovskite Solar Cells
by Zihao Gao, Xinjie Wang, Zhen Sun, Ping Song, Xiyuan Feng and Zhixin Jin
Micromachines 2025, 16(2), 218; https://doi.org/10.3390/mi16020218 - 14 Feb 2025
Cited by 6 | Viewed by 2045
Abstract
Bismuth-based perovskite derivatives, (CH3NH3)3Bi2I9 (MBI), are promising non-toxic light-absorbing materials widely used in various photoelectric devices because of their excellent stability. However, MBI-based perovskite solar cells (PSCs) are limited by poor film quality, and [...] Read more.
Bismuth-based perovskite derivatives, (CH3NH3)3Bi2I9 (MBI), are promising non-toxic light-absorbing materials widely used in various photoelectric devices because of their excellent stability. However, MBI-based perovskite solar cells (PSCs) are limited by poor film quality, and the performance of such a device is far behind that of lead-based PSCs. In this work, the crystal structure and morphological properties of MBI films were compared across different preparation methods. The two-step vapor-assisted method can prepare continuous dense MBI films because MBI crystal nucleation is induced by the BiI3 seed layer. The MBI film grown by this method is better for the production of excellent PSCs compared to the film prepared by the solution method. The best photovoltaic device based on the MBI film could obtain a power conversion efficiency of 1.13%. An MBI device is stored in the glove box for 60 days, and the device’s performance is maintained at 99%. These results indicate that the vapor-assisted deposition of MBI films can be an effective method to improve the performance of bismuth-based planar PSCs. Full article
(This article belongs to the Special Issue Energy Conversion Materials/Devices and Their Applications)
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