Search Results (340)

High-entropy ceramic (HEC) thin films generally refer to multi-component solid solutions composed of multiple metallic and non-metallic elements, existing in forms such as carbides, nitrides, and borides. Benefiting from the high-entropy effect, lattice distortion, sluggish diffusion, and cocktail effect of high-entropy systems, HEC thin films form simple amorphous or nanocrystalline structures while exhibiting high hardness/elastic modulus, excellent tribological properties, and thermal stability. Although the mixing entropy increases with the number of elements in the system, a higher number of elements does not guarantee improved performance. In addition to system configuration, the regulation of preparation methods and processes is also a key factor in enhancing performance. Arc ion plating (AIP) has emerged as one of the mainstream techniques for fabricating high-entropy ceramic (HEC) thin films, which is attributed to its high ionization efficiency, flexible multi-target configuration, precise control over process parameters, and high deposition rate. Through rational design of the compositional system and optimization of key process parameters—such as the substrate bias voltage, gas flow rates, and arc current—HEC thin films with high hardness/toughness, wear resistance, high-temperature oxidation resistance, and electrochemical performance can be fabricated, and several of these properties can even be simultaneously achieved. Against the backdrop of AIP deposition, this review focuses on discussions grounded in the thermodynamic principles of high-entropy systems. It systematically discusses how process parameters influence the microstructure and, consequently, the mechanical, tribological, electrochemical, and high-temperature oxidation behaviors of HEC thin films under various complex service conditions. Finally, the review outlines prospective research directions for advancing the AIP-based synthesis of high-entropy ceramic coatings. Full article

To investigate the in situ irradiation effects of gallium nitride at varying temperatures, we combined ion beam-induced luminescence spectroscopy with variable-temperature irradiation using a home-built IBIL system and a GIC4117 2 × 1.7 MV tandem accelerator. Unlike previous static studies—limited to post-irradiation or single-temperature luminescence—we in situ tracked dynamic luminescence changes throughout irradiation, directly capturing the real-time responses of luminescent centers to coupled temperature-dose variations—a rare capability in prior work. To clarify how irradiation and temperature affect the luminescent centers of GaN, we integrated density functional theory (DFT) calculations with literature analysis, then resolved the yellow luminescence band into three emission centers via Gaussian deconvolution: 1.78 eV associated with C/O impurities, 1.94 eV linked to VGa, and 2.2 eV corresponding to CN defects. Using a single-exponential decay model, we further quantified the temperature- and dose-dependent decay rates of these centers under dual-variable temperature and dose conditions. Experimental results show that low-temperature irradiation such as at 100 K suppresses the migration and recombination of V_Ga/C_N point defects, significantly enhancing the radiation tolerance of the 1.94 eV and 2.2 eV emission centers; meanwhile, it reduces non-radiative recombination center density, stabilizing free excitons and donor-bound excitons, thereby improving near-band-edge emission center resistance. Notably, the 1.94 eV emission center linked to gallium vacancies exhibits superior cryogenic radiation tolerance due to slower defect migration and more stable free exciton/donor-bound exciton states. Collectively, these findings reveal a synergistic regulation mechanism of temperature and radiation fluence on defect stability, addressing a key gap in static studies, providing a basis for understanding degradation mechanisms of gallium nitride-based devices under actual operating conditions (coexisting temperature fluctuations and continuous radiation), and offering theoretical/experimental support for optimizing radiation-hardened gallium nitride devices for extreme environments such as space or nuclear applications. Full article

Silicon nitride is a type of bioceramic with great application potential. However, the brittleness of silicon nitride can be addressed through toughening. In this study, various proportions of TiC were incorporated into the sintering additive system to explore the effects of different amounts of TiC on the mechanical properties, cell compatibility, and antibacterial properties of silicon nitride. Silicon nitride was prepared by gas pressure sintering, with TiC addition amounts of 3%, 5%, 8%, and 13% wt. Among the four types of silicon nitride, the mechanical properties of silicon nitride with 3% and 5% wt TiC addition were improved, with the flexural strength and fracture toughness of the former being 571 MPa and 8.35 MPa·m^1/2, respectively, and the flexural strength and fracture toughness of the latter being 532 MPa and 8.53 MPa·m^1/2, respectively. The surface of all four types of silicon nitride was enriched with Ti as the amount of TiC added increased, and the surface properties of the four silicon nitrides were the same. All four types of silicon nitride could continuously release Si ions in liquid. In vitro cell experiments showed that all four types of silicon nitride could enable normal cell proliferation and adhesion. Silicon nitride with different TiC addition amounts all exhibited good cell compatibility. Compared with the control material, each of the four types of silicon nitride demonstrated robust antibacterial efficacy against Staphylococcus aureus and Escherichia coli, with comparable potency across all types. These findings indicate that the incorporation of titanium carbide (TiC) within the silicon nitride matrix, particularly within the 3–5% weight ratio range, not only enhances mechanical integrity and cellular compatibility, but also confers notable antibacterial attributes. Consequently, these results demonstrate the promising viability of TiC-modified silicon nitride as a prospective material for the fabrication of bone implants. Full article

In this study, thin molybdenum nitride (MoN_x) layers were directly synthesized on molybdenum foil via thermal treatment under an NH₃ atmosphere, and their phase evolution, structural characteristics, and electrochemical performance were investigated. The thickness and morphology of the MoN_x layers were controlled by varying ammonolysis time and temperature, while subsequent annealing in N₂ converted the nitride layer into MoO₂. Meanwhile, oxidation in air yielded crystalline MoO₃ layers. X-ray diffraction and X-ray photoelectron spectroscopy confirmed progressive oxidation of molybdenum, with Mo 3d binding energies increasing in the sequence of Mo < MoN_x < MoO₂ < MoO₃, consistent with their nominal oxidation states. Electrochemical characterization revealed that both MoN_x/Mo and MoO₂/Mo electrodes exhibit notable pseudocapacitive behavior in 0.5 M H₂SO₄ electrolyte, with areal specific capacitances reaching up to 520 mF cm⁻² at 10 mV s⁻¹. Increasing layer thickness led to enhanced capacitance, likely due to an increase in the electrochemically accessible surface area and the extension of ion diffusion pathways. MoO₂-coated samples showed stronger faradaic contribution and superior rate capability compared to MoN_x counterparts, along with a gradual shift from predominantly electric double-layer capacitance toward hybrid pseudocapacitive charge storage mechanisms. Full article

Scandium (Sc)-doped aluminum nitride (AlN) thin films are critical for high-frequency, high-power surface acoustic wave (SAW) devices. A composite Sc doping strategy for AlN thin films is proposed, which combines magnetron sputtering pre-doping with post-doping via ion implantation to achieve gradient doping and tailor microstructural characteristics. The crystal structure, surface composition, and microstructural defects of the films were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). Results indicate that the Sc content in pre-doped ScAlN films was optimized from below 10 at.% to above 30 at.%, while the films maintained a stable (002) preferred orientation. XPS analysis confirmed the formation of Sc-N bonds, and EDS mapping revealed a gradient distribution of Sc within the subsurface region, extending to a depth of approximately 200 nm. High-resolution TEM revealed localized lattice distortions and surface amorphization induced by ion implantation. This work demonstrates the feasibility of ion implantation as a supplementary doping technique, offering theoretical insights for developing AlN films with high Sc doping concentrations and structural stability. These findings hold significant potential for optimizing the performance of high-frequency, high-power SAW devices. Full article

In this study, a battery case was developed using a 3D (three dimensional)-printed composite of hexagonal boron nitride (hBN) and polylactic acid (PLA) to enhance the thermal performance of lithium-ion battery (LiB) modules. A 10 wt.% amount of hBN was incorporated into the PLA matrix to improve the composite’s thermal conductivity while maintaining electrical insulation. A 3S2P (3 series and 2 parallel) battery configuration was initially evaluated based on the results of a baseline study for comparison and subsequently subjected to a newly developed test procedure to assess the thermal behavior of the designed case under identical environmental conditions. Initially, X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were utilized for material characterization, and their results verified the successful integration of hBN by confirming its presence in the hBN-PLA composite. In thermal tests, experimental results revealed that the fabricated hBN-PLA composite battery case significantly enhanced heat conduction and reduced surface temperature gradients compared to the previous baseline study with no case. Specifically, the maximum cell temperature (T_max) decreased from 48.54 °C to 45.84 °C, and the temperature difference (ΔT) between the hottest and coldest cells was reduced from 4.65 °C to 3.75 °C, corresponding to an improvement of approximately 20%. A 3S2P LiB module was also tested under identical environmental conditions using a multi-cycle charge–discharge procedure designed to replicate real electric vehicle (EV) operation. Each cycle consisted of sequential low and high discharge zones with gradually increased current values from 2 A to 14 A followed by controlled charging and rest intervals. During the experimental procedure, the average ΔT between the cells was recorded as 2.38 °C, with a maximum value of 3.50 °C. These results collectively demonstrate that the 3D-printed hBN-PLA composite provides an effective and lightweight passive cooling solution for improving the thermal stability and safety of LiB modules in EV applications. Full article

Coating Brownian thermal noise is a major limitation to the sensitivity of gravitational-wave detectors. To reduce it, future detectors are planned to operate at cryogenic temperatures. This implies a change of their mirror coating materials and the use of a longer laser wavelength, such as 1550 nm. A stack of amorphous silicon and silicon nitride layers has previously been proposed as a promising combination of low- and high-refractive index materials to realize low-noise highly-reflective coatings. An essential step towards such coatings is the production of both materials via ion-beam sputtering. In this paper, for the first time, we present a study of the optical properties at 1550 nm of silicon nitride thin films deposited via ion beam sputtering. The refractive index and optical absorption as a function of post-deposition heat treatment temperature are investigated using a spectrophotometer and a photo-thermal common-path interferometer. Finally, we discuss the prospect of combining this material with amorphous silicon. Full article

Nitrate (NO₃⁻), as a stable nitrogen-containing compound, has caused serious harm to the ecological environment and human health. To reduce nitrate pollution, the catalytic reduction of nitrate (NO₃RR) to ammonia (NH₃) is a very promising solution. Recently, single-atom catalysts (SACs) have received extensive attention due to their excellent activity and stability. Here, we study the nitrate catalytic reduction properties of hexagonal-boron-nitride-(h-BN)-supported single-atom Cu systematically and theoretically and compare it with monolayer h-BN. We find that (1) due to the stronger electronegativity of the N atom, Cu atom is preferentially doped at the N top site, resulting in the significant electron rearrangement; (2) the doped Cu atom at the N top site for monolayer h-BN can provide extra 3d-orbital electrons at the Fermi level, which can significantly enhance the conductivity, reduce the bandgap width, and increase the reducibility; (3) the NO₃⁻ ion preferentially adsorbs at the hollow site of monolayer h-BN, while the NO₃⁻ ion is adsorbed more strongly at the Cu top site of h-BN-supported single-atom Cu due to the abundant d-electron supply from the Cu atom; (4) single-atom Cu can significantly reduce the energy barrier of the rate-determining step (RDS) and increase the probability of nitrate reduction. In conclusion, h-BN-supported single-atom Cu exhibits excellent catalytic performance of NO₃RR. Full article

Aluminum scandium nitride (Al_1−xSc_xN) is a promising ferroelectric material for non-volatile random-access memory devices and electromechanical sensors. However, adverse effects on polarization from electrical leakage are a significant concern for this material. We observed that the electrical conductivity of Al_1−xSc_xN thin films grown on epitaxial TiN(111) buffered Si(111) follows an Arrhenius-type behavior versus the growth temperature, suggesting that point defect incorporation during growth influences the electronic properties of the film. Photoluminescence intensity shows an inverse correlation with growth temperature, which is consistent with increased non-radiative recombination from point defects. Further characterization using secondary ion mass spectrometry in a focused ion beam/scanning electron microscope shows a correlation between trace Ti concentrations in Al_1−xSc_xN films and the growth temperature, further suggesting that extrinsic dopants or alloying components potentially contribute to the point defect chemistry to influence electrical transport. Investigation of the enthalpy of formation of nitrogen vacancies in Al_1−xSc_xN using density functional theory yields values that are in line with electrical conductivity measurements. Additionally, the dependence of nitrogen-vacancy formation energy on proximity to Sc atoms suggests that variations in the local structure may contribute to the occurrence of point defects, which, in turn, can impact electrical leakage. Furthermore, we have demonstrated ferroelectric behavior through electrical measurements and piezoresponse force microscopy after dc bias poling of films in spite of electrical conductivity spanning several orders of magnitude. Although electrical leakage remains a challenge in Al_1−xSc_xN, the material holds potential due to tunable electrical conductivity as a semiconducting ferroelectric material. Full article

In this study, a highly efficient graphitic carbon nitride/graphene oxide (X kGy-g-C₃N₄/GO, X: mean different irradiation dose of 200, 300, 400, and 500 kGy) adsorbent was successfully prepared by electron beam irradiation method (EBR) and used for the adsorption of ofloxacin (OFL). Structure and morphology characterization results confirmed the successful composite of g-C₃N₄ and GO through EBR. The effects of various conditions on the adsorption capacity, including irradiation dose, pH, adsorbent dosage, and initial OFL concentration were analyzed in detail through experiments. Results indicated that 400 kGy-g-C₃N₄/GO exhibited the maximum adsorption capacity for OFL (222.0 mg·g⁻¹), and the adsorption performance was affected by pH through electrostatic interactions, reaching optimum at pH = 7.0. Coexisting ion experiments revealed that CO₃²⁻ reduced OFL adsorption capacity. The adsorption isotherm and kinetics were best described by the Langmuir model (R² = 0.984) and pseudo-second-order model (R² = 0.995), respectively. Thermodynamic studies of adsorption indicated a spontaneous and exothermic in adsorption process (∆G⁰ = −25.21, ∆S⁰ = 0.050, and ∆H⁰ = −10.25). This research provides a fresh approach to the reasonable design of g-C₃N₄/GO composites as adsorbent with potential applications in OFL wastewater treatment. Full article

Gallium Nitride (GaN) fabricated on an insulated sapphire substrate achieves a higher rated voltage of monolithic power integrated circuits compared to that fabricated on a conductive silicon substrate. In this paper, the effectiveness of isolation approaches considering substrate bias and crosstalk effects between adjacent devices in GaN-on-Sapphire monolithic power integrated circuits is investigated. It is demonstrated that the substrate bias and crosstalk effects between high-side and low-side power devices are effectively suppressed regardless of substrate termination with the implantation isolation approach. Thanks to the ultrathin buffer upon an insulated sapphire substrate, the ion implantation can also isolate the adjacent high-voltage (power) and low-voltage (logic) devices. However, a weak crosstalk effect that is caused by capacitive coupling is still observed between high-voltage devices and low-voltage devices with the implantation approach; the degradation rate is calculated to be up to 3%. Experimental results prove that a shallow trench isolation structure in the implantation region can be adopted to mitigate the crosstalk effects, to further improve the stability of integrated logic circuits and drivers under dynamic high-voltage switching conditions. Full article

Efficient thermal management is critical for the safety and performance of lithium-ion battery (LIB) systems, particularly under high C-rate charge–discharge cycling. Here, we investigate two classes of polymer composite thermal interface materials (TIMs): graphene-PLA (GPLA) fabricated via 3D printing and boron nitride nanoplatelets (BN)-loaded thermoplastic polyurethane (TPU) composites with 20 and 40 wt.% BN content. To understand cooling dynamics, we developed a simple analytical model based on Newtonian heat conduction, predicting an inverse relationship between the cooling rate and the TIM thermal diffusivity. We validated this model experimentally using a six-cell LIB module equipped with active liquid cooling, and complemented it with finite-element simulations in COMSOL Multiphysics incorporating experimentally derived parameters. Across all approaches, analytical, numerical, and experimental, we observed excellent agreement in predicting the temperature decay profiles and inter-cell temperature differentials ($\mathrm{\Delta }T$). Charge–discharge cycling studies at varying C-rates demonstrated that high-diffusivity TIMs enable faster cooling but require careful design to minimize lateral thermal gradients. Our results establish that an ideal TIM must simultaneously support rapid vertical heat sinking and effective lateral thermal diffusion to ensure thermal uniformity. Among the studied materials, the 40% BN–60% TPU composite achieved the best overall performance, highlighting the potential of BN filler-engineered polymer composites for scalable thermal management in next-generation battery systems. Full article

Silicon photonics offers a powerful route to leverage existing microelectronics infrastructure to enhance performance and enable new applications in data processing and sensing. Among the available material platforms, silicon nitride (Si₃N₄) provides significant advantages due to its wide optical transmission window. A key challenge, however, remains the monolithic integration of passive nitride-based photonic components with active electronic devices directly on silicon wafers. In this work, we propose and demonstrate a tapered bottom-cladding design that enables efficient coupling of visible light from Si₃N₄/SiO₂ core–cladding waveguides into planar p–n junction photodiodes fabricated on the silicon surface. Si₃N₄/SiO₂ waveguides were fabricated using fully CMOS-compatible processes and materials. Controlled reactive ion etching (RIE) of SiO₂ allowed the formation of vertically tapered claddings, and finite-difference time-domain (FDTD) simulations were carried out to analyze coupling efficiency across wavelengths from 509 nm to 740 nm. Simulations showed transmission efficiencies above 90% for taper angles below 30°, with near-total coupling at 10°. Experimental fabrication achieved angles as low as 8°. Responsivity simulations yielded values up to 311 mA W⁻¹ for photodiodes without internal gain. These results demonstrate the feasibility of fabricating monolithic Si-based waveguide–photodetector systems using simple, CMOS-compatible methods, opening a scalable path for integrated photonic–electronic devices operating in the visible range. Full article

Aqueous zinc-ion batteries (AZIBs) have attracted considerable attention due to their intrinsic safety, low cost, and environmental friendliness. However, drastic volume expansion, sluggish reaction kinetics, and the insufficient structural stability of electrode materials still remain key challenges. In this work, a cascade structure-guided electron transport strategy was used to construct a vanadium nitride@carbon nanosheet/carbon nanofiber (VN@CNS/CNF) composite as a high-performance cathode for AZIBs. In this rationally engineered architecture, carbon-coated VN nanoparticles are uniformly anchored on a conductive carbon nanofiber network, forming a multidimensional interconnected structure that enables fast electron/ion transport and robust mechanical stability. The carbon shell effectively alleviates volume expansion and prevents VN nanoparticle agglomeration, while the continuous carbon fiber backbone reduces charge transfer resistance and enhances reaction kinetics. Benefiting from this synergistic structural design, the VN@CNS/CNF electrode delivers a high specific capacity of 564 mAh g⁻¹ at 0.1 A g⁻¹, maintains 99% capacity retention after 50 cycles, and retains 280 mAh g⁻¹ even at 8 A g⁻¹ after prolonged cycling. This study provides a new structural engineering strategy for vanadium nitride-based electrodes and provides strategic guidance for the development of fast-charging, durable aqueous zinc-ion batteries. Full article

In this paper, samples of nanocrystalline iron nitride γ’-Fe₄N, doped with small amounts of hardly reducible promoter oxides (Al₂O₃, CaO, and K₂O), were subjected to electron magnetic resonance (EMR) measurements. The samples differed in the average nanocrystallite size of iron nitride (23–54 nm). The EMR analysis was performed to probe the magnetic characteristics of the nanoparticles. The spectra, fitted with a Voigt function, were deconvoluted into contributions from the γ’-Fe₄N phase in the nanoparticle core and from surface-associated iron ions. The resulting magnetic responses were quantitatively correlated with nanoparticle size, elucidating finite-size effects governing the system’s magnetic behavior. Full article