Search Results (190)

In this work, a post-annealing rapid cooling and aging treatment process is innovatively proposed to build high-performance zinc tin oxide (ZTO) thin-film transistors. The relaxation effect on the abundant oversaturated oxygen vacancy deep-level traps contributes to the shallow donor formation during the aging period. The TFTs aged in an air environment for 10 days possess significantly improved electrical performance, including a clearly increased on/off current ratio of 7 × 10⁶ from 2 × 10⁴ and a markedly increased saturation mobility of 5.9 from 2.2 cm²·V⁻¹·s⁻¹, verifying the facile method to improve the electrical property of polycrystalline TFTs, and the method has been investigated using the grain boundary defect relaxation model and energy band theory. It is worth mentioning that the TFTs aged under vacuum conditions realized more effective regulation and control on off-state current and demonstrated a wider aging time window. The distinctive illumination interface stability was studied in depth using a charge trapping model and electron–hole pair model, which embody the potential application in photoelectric detectors. Full article

The high-voltage spinel ${\mathrm{LiNi}}_{0.5}{\mathrm{Mn}}_{1.5}{\mathrm{O}}_4$ (LNMO) is a promising cobalt-free cathode material for lithium-ion batteries, yet its integration as a binder-free thin film on metallic current collectors via simple solution routes remains underexplored. Here, LNMO films were synthesized on 304 stainless steel (SS304) by metal–organic decomposition (MOD) from metal–acetate precursors in ethanol, followed by spin-coating and annealing at 500, 600, and 700 °C under flowing ${\mathrm{O}}_2$. The films were characterized by XRD, FESEM–FIB cross-sectioning, EDS, and XPS, and tested as binder-free cathodes by cyclic voltammetry and galvanostatic charge/discharge. All samples are dense, approximately 1.9 μm thick, and crystallize in the disordered spinel phase. The LNMO crystallite size increases from 21.9 to 43.8 nm between 500 and 700 °C, while the grain size also shows a temperature dependence, increasing the average size from 25 up to 56 nm in diameter. XPS confirms ${\mathrm{Mn}}^{4+}$ as the dominant manganese surface species (45–49%) across all samples. The films deliver reversible discharge capacities of 92, 92, and 70 mAh ${\mathrm{g}}^{-1}$ at 0.1 C for LNMO500, LNMO600, and LNMO700, respectively, with well-defined ${\mathrm{Ni}}^{2+}{\mathrm{/Ni}}^{3+}$ and ${\mathrm{Ni}}^{3+}{\mathrm{/Ni}}^{4+}$ redox peaks at 4.7 and 4.8 V. DFT calculations independently predict a voltage plateau at ∼4.7 V for $0.2\le x\le 1$, in agreement with the experimental profiles. These findings establish MOD as a viable, vacuum-free route to the synthesis of nanostructured LNMO cathodes. Full article

This study provides a rigorous analysis of the phase stability, mechanical behavior, and surface integrity of a non-equiatomic (FeCoNiCr)₈₅Ga₁₅ high-entropy alloy (HEA). By transitioning from the conventional equiatomic design to a gallium-doped 3d-transition metal matrix, we explore the interplay between lattice distortion and phase separation. Synthesized via vacuum arc melting, the as-cast alloy exhibits a non-homogeneous dendritic morphology consisting of a Cr-Fe-Co rich face-centered cubic (FCC) matrix and Ni-Ga rich body-centered cubic (BCC) interdendritic regions. While global thermodynamic criteria (δ = 3.65, ΔH_mix = −9.28 kJ/mol, and Ω = 2.23) favor single-phase solid solution stability, the Valence Electron Concentration (VEC = 7.46) precisely forecasts this dual-phase structure. Following low-temperature annealing at 250 °C for 24 h, high lattice strain energy drives a significant morphological transformation where the continuous interdendritic network resolves into discrete, phase-separated B2/BCC “islands”. Mechanical and tribological characterizations reveal that this low-temperature thermal activation triggers precipitate hardening; the macro-hardness increases from 146 ± 11 HB to 153 ± 7.5 HB and the micro-hardness rises from 186 ± 4 HV_0.5 to 206 ± 17.5 HV_0.5, yielding enhanced resistance to oxidation-delamination wear. However, electrochemical evaluation in a 3.5 wt.% NaCl solution highlights a fundamental trade-off: the formation of localized galvanic micro-cells between the phase-separated islands and the matrix causes the corrosion current density (i_corr) to increase from ≈10⁻⁹ A/cm² in the as-cast state to ≈10⁻⁶ A/cm² post-heat treatment, accompanied by a heightened susceptibility to localized pitting. These findings elucidate the primary role of electronic structure and minor p-block additions in regulating the lifecycle performance of transition metal HEAs under extreme conditions. Full article

Vanadium dioxide (VO₂) films have attracted extensive attention for their pronounced metal–insulator transition (MIT) and multifunctional responses, holding great promise for smart windows, infrared stealth, memristive devices, and advanced sensors. However, conventional approaches for tuning the transition temperature, such as elemental doping or heterostructure engineering, often suffer from complicated processing, impurity phases, and poor device uniformity. Here, we use a dopant-free, high-vacuum annealing (9 × 10⁻⁴ Pa, ≈9 × 10⁻⁶ mbar) strategy to regulate the intrinsic structural evolution of VO₂ films via oxygen-vacancy engineering and to clarify its influence on electrical switching contrast and infrared emissivity modulation. As the annealing temperature increases under low oxygen partial pressure, oxygen vacancies gradually accumulate, converting V⁴⁺ to V³⁺ and driving the films through three distinct structural stages: low-temperature lattice expansion with preserved M1 framework, critical structural collapse at 550 °C, and high-temperature defect rearrangement with local recrystallization. Consequently, the electrical MIT temperature continuously decreases, but the switching ratio collapses at the critical point and only partially recovers after high-temperature reorganization, while the infrared emissivity response transitions from abrupt, phase-transition-dominated switching to a continuous, tunable modulation at elevated temperatures. Notably, the infrared response begins continuous tuning earlier (≈450 °C) than the collapse of electrical MIT, reflecting the different sensitivities of optical and electronic responses to local lattice defects. These results reveal the coupling among oxygen-vacancy evolution, structural stability, electrical contrast, and infrared modulation in compositionally simple VO₂ films. Compared with conventional doping, this high-vacuum annealing strategy avoids impurity phases, preserves compositional simplicity, and provides a scalable defect-engineering route to design VO₂-based devices with reconfigurable electrical and infrared response modes. Full article

Significant differences in hydrogen adsorption on amorphous and crystalline gold nanoparticles deposited on highly oriented pyrolytic graphite (HOPG) were revealed. Crystalline nanoparticles were synthesized via the impregnation–precipitation method followed by annealing at 700 K, whereas amorphous ones were obtained using the laser electrodispersion method. The morphology and electronic structure of single nanoparticles were investigated with high spatial resolution using scanning tunneling microscopy and spectroscopy (STM/STS) in ultra-high vacuum both before and after exposure to molecular hydrogen at doses of 400–6000 L. Experiments performed at room temperature showed that the surface coverage by the adsorbate in both cases begins at the Au-HOPG interface, spreads towards the center of the particle, and corresponds to the island growth model. However, amorphous nanoparticles have fewer growth sites at the periphery compared to crystalline ones. The local electronic structure of amorphous nanoparticles is more inhomogeneous compared to crystalline ones, demonstrating variation across different points on the nanoparticle surface. It was shown that dissociative chemisorption of hydrogen takes place on amorphous gold nanoparticles with a size of 4–6 nm. Chemisorption is completely inhibited when the nanoparticle size is reduced to 2 nm or less. Full article

High-entropy oxide (HEO) thin films hold significant potential for applications in spintronics and catalysis; however, their widespread utilization is hindered by weak room-temperature ferromagnetism (RTFM). Herein, we demonstrate a facile vacuum annealing strategy to enhance the RTFM of HEO thin films. (FeNiAlCrMn)O films exhibit a saturation magnetization (M_S) of 5.9 emu/cm³ and a Curie temperature (T_C) of 350 K after vacuum annealing at 1173 K. Mechanistic investigations reveal that the enhanced RTFM originates from an annealing-induced phase transition from rocksalt-to-spinel. Structurally, annealing facilitates cation diffusion from octahedral to tetrahedral sites, forming a highly crystalline, long-range magnetic lattice of spinel ferrite. Electronically, tetrahedral occupation shortens M–O bonds, drives electron transfer toward metal cations, and enhances orbital hybridization, thereby strengthening magnetic exchange coupling. This study provides a simple and effective strategy for tailoring the RTFM of HEO thin films. Full article

The multilayers of Ta/Pd/[CoFeB (0.3 nm)/Pd]×5/Pd films were fabricated by ultra-high-vacuum (UHV) magnetron sputtering and subsequently annealed at temperatures (T_A) ranging from 100 °C to 400 °C. The magnetic measurements were performed with the applied field oriented parallel and perpendicular to the film plane to evaluate the out-of-plane magnetic anisotropy (PMA). A maximum effective PMA energy density (K_eff) of ≈7.82 × 10⁵ erg/cc and a small out-of-plane saturation magnetisation (M_s⊥) were achieved at the optimal T_A. The evolution of PMA is associated with interfacial atomic migration and oxidation processes, as confirmed by X-ray photoelectron spectroscopy (XPS). Annealing at 300 °C initiates the formation of TaB and TaOB interfacial phases, whereas annealing at 400 °C promotes the enhanced growth of Ta₂O₅ and TaB, along with additional TaOB formation owing to increased oxygen migration. These thermally stable Ta–boride phases lead to pronounced modifications in the magnetic properties. Consequently, oxygen migration and interfacial reactions at elevated temperatures primarily alter the chemical states of the B 1s, Pd 3d, and Ta 4f orbitals, thereby influencing the PMA. The field-dependent electrical resistance (MR) study demonstrates that annealing at 100–400 °C optimises the anisotropic effect in the [CoFeB/Pd]×5-based multilayers. However, higher temperatures can trigger atomic intermixing, which degrades PMA strength and the resistance response. Moreover, the samples were further characterised by their structural, anomalous Hall effect (AHE) and magnetoresonance (MRO) properties. Overall, controlled T_A-driven oxygen diffusion and interfacial oxidation enable effective tuning of the PMA, MR, and MRO properties of ultrathin [CoFeB/Pd]×5 multilayers, highlighting their strong potential for spin–orbit torque (SOT), Dzyaloshinskii–Moriya interaction (DMI), and magnetic skyrmion-based spintronic devices. Full article

The present study examined the interactions between the structure, microstructure and mechanical properties of CrMnFeCoNi, CrMnFeCoNiV_0.5 and CrMnFeCoNiMo_0.5 High-Entropy Alloys (HEAs). Starting from elemental powders, the HEAs were obtained by high-energy ball milling, followed by vacuum annealing at 1373 K for 1 h. After milling, a binary FCC-BCC solid solution was formed; the samples showed hardness values ranging from 800 to 973 HV. Evidence shows that annealing HEAs reduced the solubility of V and Mo in the alloys’ FCC structure. Additionally, the Cr content in the FCC phase also decreases. The carbon derived from the decomposition of the process control agent was trapped in the interstices of the HEA structure during mechanical alloying. This amount of carbon is sufficient to form carbides during annealing. The thermodynamic stability of the precursor elements in HEAs is a determining factor in M_xC_y-type formation. The hardness response of HEAs was associated with the HEAs’ structure, while the elastic modulus was affected by their microstructure. Full article

The development of high-performance anode materials is essential to overcome the limitations associated with conventional graphite electrodes in lithium-ion batteries, and perovskite oxides emerge as promising alternatives due to their structural flexibility and defect chemistry. In this work, the potential of LaSrCoFeO₃ perovskite (LSCF) thin films as anode materials is investigated, with particular emphasis on the effect of the post-deposition annealing atmosphere. LSCF thin films were deposited by dc magnetron sputtering and then thermal-treated at 600 °C in air and vacuum. The structural, electrical and electrochemical characterizations show that vacuum annealing promotes a more efficient crystallization, leading to larger crystallites (~240 nm), and to reduced oxidation due to the formation of oxygen vacancies. This reduced state significantly reduces electrical conductivity to ~10⁻⁵ Ω·cm. When evaluated as a half-cell anode, the vacuum-annealed films exhibit a theoretical specific capacity of 121 mAh·g⁻¹, high reversibility with anodic and cathodic charge ratio Q_a/Q_c ≈ 1 and a good cyclic stability, with a loss of discharge capacity of less than 10%. Raman spectroscopy experiments confirm that the film structure remains unchanged upon the electrochemical tests, evidencing the stability of the perovskite structure. These results show that the annealing atmosphere is a determining parameter to optimize the electrochemical performance of LSCF thin films, reinforcing their potential as anodes for future lithium-ion batteries. Full article

Ni thick films have a wide range of applications in mechanical areas for anti-corrosion, anti-friction and protection purposes, and are also extensively employed in the chip packaging field. Yet, the deposition of Ni thick films is still faced with many problems in deposition efficiency, dense structure and adhesion to the substrate. RF magnetron sputtering was employed to deposit on polished Ti substrate up to 10.8 µm thick Ni films at a high deposition rate (45 nm/min) in Ar atmosphere plus a small amount of H₂. Vacuum annealing was performed at 400 °C for 5 h. To characterize the adhesion via friction and scratch test, different loads were applied on both surfaces of as-sputtered and post-annealed Ni thick films, and results were comparatively analyzed. The films have high purity, compact structure, smooth surface and strong adhesion strength. Post-annealed samples showed better and stable adhesion of Ni thick films to the substrate surface. Full article

A Ni₂MnSn Heusler alloy composition of elemental powders was high-energy milled for a short time for powder activation. The milling times were chosen to be 1 and 4 h to study how mechanical mixing triggers the phase formation in the Ni-Mn-Sn system. After milling, the samples were analyzed by differential scanning calorimetry and the thermal events of Ni₂MnSn L₂₁ phase formation were investigated. The milled samples were compacted at 700 MPa and annealed in a vacuum for 10 min at different temperatures (230 °C, 330 °C, and 600 °C). The annealing temperatures were chosen to emphasize the activated powders’ behavior before and after Sn melting on L₂₁ Structure formation. Using X-ray diffraction and Rietveld analysis, the phase quantity was computed, showing that the largest L₂₁ phase (63%) can be obtained from the elemental powder mixture due to Sn melting during the annealing. For milled samples, a Ni₃Sn₄ phase was obtained by milling, and by annealing this phase, along with the remaining element, it reacts to form a Ni₂MnSn L₂₁ phase and a Ni₃Sn₂ phase. The microstructural evolution of the phase was illustrated by backscattering electron microscopy for milled and subsequent annealed samples, and, by image analysis, a correlation of the phase’s amount was performed. The results of the image analysis were correlated with the X-ray diffraction patterns. Full article

The general procedure for measurement of impurities in hot zones of high-temperature growth setups is proposed and developed. In the first step, we prepared extra-pure 15 × 15 × 8 mm collecting cubes from composite graphite by high-temperature annealing in dry dynamic vacuum. The collecting cubes were placed in different parts of the hot zones of growth setups. We tested two types of crystal growth setups: single- and multi-crucible growth setups of a VGF configuration for A^IIIB^V semiconductors’ crystal growth. The hot zones of the setups were built from different types of graphite materials and high-temperature dielectric ceramics (BN and Al₂O₃) as insulators. The growth setups with collecting cubes without raw crystal materials were heated to operating temperatures, exposed for certain operating periods, and cooled to room temperature. The cubes were taken off and analyzed by extraction of condensed impurities into an analytic super-pure acid. The extracted impurities in the acid were determined by ICP-MS analysis. We showed that the hot zone of a single-crucible growth setup was nearly twice as pure (averaged 2.45 mg/g) compared with the hot zone of a multi-crucible setup (averaging 4.06 mg/g) because of the different graphite materials of the constructions. Full article

This study investigates the effectiveness and underlying mechanisms of electropulsing treatment (EPT) for rapid stress relief of Ti-6Al-4V titanium alloy. Stress relief is an essential step in manufacturing processes to ensure long component lifespan. Residual stress accumulation within a component is often undesirable, as it may lead to premature failures. Currently, the stress relief of titanium alloys is typically carried out using an annealing heat-treatment process in a vacuum furnace. However, this method is time-consuming, usually requiring several hours. In this paper, an alternative fast stress relief method by EPT was investigated. A controllable pulsing treatment using alternating high density pulsing current with short pulse width was carried out. Results showed that EPT is effective in relieving residual stress in Ti-6Al-4V alloy. Up to 90% of the surface residual stresses induced by shot peening were successfully relieved by EPT with a treatment duration of only 114 ms. Reductions of low-angle grain boundaries (2–10°), local misorientation, and deformed grains were observed, while no significant grain growth or phase transformation was found. The stress-relief mechanism of EPT is attributed to the combined effects of dislocation movement driven by electron wind force (EWF), dislocation creep at elevated temperatures, and dislocation glide due to local yielding of residual stress under high-temperature conditions. The temperature rise during EPT was identified as a significant factor enabling stress relaxation. Full article

The development of metal nanostructures on large-area Gallium Nitride (GaN) surfaces has the potential to enable new, low-cost technologies for III-N semiconductor layer nanostructuring. Self-assembled nanostructures are typically formed through the thermal activation of solid-state dewetting (SSD) in thin metal layers. However, such thermal processing can induce degradation of the metal-GaN material system. This comprehensive study investigated the thermal stability of thin metal films on GaN surfaces, focusing on their morphology and nanostructuring for high-temperature processing. The research expands and systematizes the understanding of the thin metal layers on GaN surface interactions at high temperatures by categorizing metals based on their behaviour: those that exhibit self-assembly, those that catalyze GaN decomposition, and those that remain thermally stable. Depending on the annealing temperature and metal type, varying degrees of GaN layer decomposition were observed, ranging from partial surface modification to significant volumetric degradation of the material. A wide range of metals was investigated: Au, Ag, Pt, Ni, Ru, Mo, Ti, Cr, V, Nb. These materials were selected based on criteria such as high work function and chemical resistance. In this studies metal layers with a target thickness of 10 nm deposited by vacuum evaporation on 2.2 $\mathsf{\mu }$m thick GaN layers grown by metal organic vapor phase epitaxy were applied. The surface morphology and composition were analyzed using AFM, SEM, EDS, and Raman spectroscopy measurement techniques. Full article

We introduce a fully solution-processed interlayer strategy for n–p CdS/PbS thin film solar cells that combines a sol–gel ZnO compact coating with an electrospun ZnO nanofiber network. The synthesis and characterization of ZnO, CdS, and PbS thin films, complemented by electrospun ZnO nanofibers, are aimed at low-cost photovoltaic applications. Sol–gel ZnO films exhibited a hexagonal wurtzite structure with a bandgap (Eg) of approximately 3.28 eV, functioning effectively as electron transport and hole-blocking layers. CdS films prepared by chemical bath deposition (CBD) showed mixed cubic and hexagonal phases with an Eg of about 2.44 eV. PbS films deposited at low temperature displayed a cubic galena structure with a bandgap of approximately 0.40 eV. Scanning Electron Microscopy revealed uniform ZnO and CdS surface coatings and a conformal 1D ZnO network with nanofibers measuring about 50 nm in diameter (ranging from 49.9 to 53.4 nm), which enhances interfacial contact coverage. PbS films exhibited dense grains ranging from 50 to 150 nm, and EDS confirmed the expected stoichiometries. Electrical characterization indicated low carrier densities and high resistivities consistent with low-temperature processing, while mobilities remained within reported ranges. The incorporation of ZnO layers and nanofibers significantly improved device performance, particularly at the CdS/PbS heterojunction. The device achieved a V_oc of 0.26 V, an J_sc of 3.242 mA/cm², and an efficiency of 0.187%. These improvements are attributed to enhanced electron transport selectivity and reduced interfacial recombination provided by the percolated 1D ZnO network, along with effective hole blocking by the compact film and increased surface area. Fill-factor limitations are linked to series resistance losses, suggesting potential improvements through fiber densification, sintering, and control of the compact layer thickness. This work is a proof-of-concept of a fully solution-processed and low-temperature CdS/PbS architecture. Efficiencies remain modest due to low carrier concentrations typical of low-temperature CBD films and the deliberate omission of high-temperature annealing/ligand exchange. Overall, this non-vacuum, low-temperature coating method establishes electrospun ZnO as a tunable functional interlayer for CdS/PbS devices and offers a practical pathway to elevate power output in scalable productions. These findings highlight the potential of nanostructured intermediate layers to optimize charge separation and transport in low-cost PbS/CdS/ZnO solar cell architectures. Full article