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Keywords = high–power photodiodes

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11 pages, 1859 KiB  
Article
Epitaxial Graphene/n-Si Photodiode with Ultralow Dark Current and High Responsivity
by Lanxin Yin, Xiaoyue Wang and Shun Feng
Nanomaterials 2025, 15(15), 1190; https://doi.org/10.3390/nano15151190 - 3 Aug 2025
Viewed by 164
Abstract
Graphene’s exceptional carrier mobility and broadband absorption make it promising for ultrafast photodetection. However, its low optical absorption limits responsivity, while the absence of a bandgap results in high dark current, constraining the signal-to-noise ratio and efficiency. Although silicon (Si) photodetectors normally offer [...] Read more.
Graphene’s exceptional carrier mobility and broadband absorption make it promising for ultrafast photodetection. However, its low optical absorption limits responsivity, while the absence of a bandgap results in high dark current, constraining the signal-to-noise ratio and efficiency. Although silicon (Si) photodetectors normally offer fabrication compatibility, their performance is severely hindered by interface trap states and optical shading. To overcome these limitations, we demonstrate an epitaxial graphene/n-Si heterojunction photodiode. This device utilizes graphene epitaxially grown on germanium integrated with a transferred Si thin film, eliminating polymer residues and interface defects common in transferred graphene. As a result, the fabricated photodetector achieves an ultralow dark current of 1.2 × 10−9 A, a high responsivity of 1430 A/W, and self-powered operation at room temperature. This work provides a strategy for high-sensitivity and low-power photodetection and demonstrates the practical integration potential of graphene/Si heterostructures for advanced optoelectronics. Full article
(This article belongs to the Section 2D and Carbon Nanomaterials)
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29 pages, 4978 KiB  
Article
HPLC-DAD-ESI/MS and 2D-TLC Analyses of Secondary Metabolites from Selected Poplar Leaves and an Evaluation of Their Antioxidant Potential
by Loretta Pobłocka-Olech, Mirosława Krauze-Baranowska, Sylwia Godlewska and Katarzyna Kimel
Int. J. Mol. Sci. 2025, 26(13), 6189; https://doi.org/10.3390/ijms26136189 - 27 Jun 2025
Viewed by 378
Abstract
Poplar leaves (Populi folium) are a herbal remedy traditionally used for the treatment of rheumatic diseases and prostate inflammation. The aim of our study was a comprehensive identification of secondary metabolites occurring in the leaves of Populus alba, Populus × [...] Read more.
Poplar leaves (Populi folium) are a herbal remedy traditionally used for the treatment of rheumatic diseases and prostate inflammation. The aim of our study was a comprehensive identification of secondary metabolites occurring in the leaves of Populus alba, Populus × candicans, and Populus nigra, in order to search for a source of raw plant material rich in active compounds. Total salicylate (TSC), flavonoid (TFC), and phenolic compound (TPC) contents were determined, and the antioxidant potential was assessed using DPPH (2,2-diphenyl-1-picrylhydrazyl), ABTS (2,2′-azino-bis(3-ethylbenzothiazoline- 6-sulfonic acid) diammonium salt), and FRAP (ferric reducing antioxidant power) assays as well as 2D-TLC (two-dimensional thin layer chromatography) bioautography using DPPH, riboflavin-light-NBT (nitro blue tetrazolium chloride), and xanthine oxidase inhibition tests. Secondary metabolites present in the analyzed poplar leaves were identified under the developed HPLC-DAD-ESI/MS (high performance liquid chromatography with photodiode array detection and electrospray ionization mass spectrometric detection analysis conditions and using the 2D-TLC method. Among the 80 identified compounds, 13 were shown for the first time in the genus Populus. The most diverse and similar set of flavonoids characterized the leaves of P. × candicans and P. nigra, while numerous salicylic compounds were present in the leaves of P. alba and P. × candicans. All analyzed leaves are a rich source of phenolic compounds. The highest flavonoid content was found in the leaves of P. × candicans and P. nigra, while the leaves of P. alba were characterized by the highest content of salicylates. All examined poplar leaves demonstrated antioxidant potential in all the assays used, which decreased in the following order: P. nigra, P. × candicans, P. alba. Full article
(This article belongs to the Collection 30th Anniversary of IJMS: Updates and Advances in Biochemistry)
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19 pages, 1706 KiB  
Article
Demonstration of 50 Gbps Long-Haul D-Band Radio-over-Fiber System with 2D-Convolutional Neural Network Equalizer for Joint Phase Noise and Nonlinearity Mitigation
by Yachen Jiang, Sicong Xu, Qihang Wang, Jie Zhang, Jingtao Ge, Jingwen Lin, Yuan Ma, Siqi Wang, Zhihang Ou and Wen Zhou
Sensors 2025, 25(12), 3661; https://doi.org/10.3390/s25123661 - 11 Jun 2025
Viewed by 440
Abstract
High demand for 6G wireless has made photonics-aided D-band (110–170 GHz) communication a research priority. Photonics-aided technology integrates optical and wireless communications to boost spectral efficiency and transmission distance. This study presents a Radio-over-Fiber (RoF) communication system utilizing photonics-aided technology for 4600 m [...] Read more.
High demand for 6G wireless has made photonics-aided D-band (110–170 GHz) communication a research priority. Photonics-aided technology integrates optical and wireless communications to boost spectral efficiency and transmission distance. This study presents a Radio-over-Fiber (RoF) communication system utilizing photonics-aided technology for 4600 m long-distance D-band transmission. We successfully show the transmission of a 50 Gbps (25 Gbaud) QPSK signal utilizing a 128.75 GHz carrier frequency. Notwithstanding these encouraging outcomes, RoF systems encounter considerable obstacles, including pronounced nonlinear distortions and phase noise related to laser linewidth. Numerous factors can induce nonlinear impairments, including high-power amplifiers (PAs) in wireless channels, the operational mechanisms of optoelectronic devices (such as electrical amplifiers, modulators, and photodiodes), and elevated optical power levels during fiber transmission. Phase noise (PN) is generated by laser linewidth. Despite the notable advantages of classical Volterra series and deep neural network (DNN) methods in alleviating nonlinear distortion, they display considerable performance limitations in adjusting for phase noise. To address these problems, we propose a novel post-processing approach utilizing a two-dimensional convolutional neural network (2D-CNN). This methodology allows for the extraction of intricate features from data preprocessed using traditional Digital Signal Processing (DSP) techniques, enabling concurrent compensation for phase noise and nonlinear distortions. The 4600 m long-distance D-band transmission experiment demonstrated that the proposed 2D-CNN post-processing method achieved a Bit Error Rate (BER) of 5.3 × 10−3 at 8 dBm optical power, satisfying the soft-decision forward error correction (SD-FEC) criterion of 1.56 × 10−2 with a 15% overhead. The 2D-CNN outperformed Volterra series and deep neural network approaches in long-haul D-band RoF systems by compensating for phase noise and nonlinear distortions via spatiotemporal feature integration, hierarchical feature extraction, and nonlinear modelling. Full article
(This article belongs to the Special Issue Recent Advances in Optical Wireless Communications)
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12 pages, 2616 KiB  
Article
Intelligent Ultrasonic Aspirator Controlled by Fiber-Optic Neoplasm Sensor Detecting 5-Aminolevulinic Acid-Derived Porphyrin Fluorescence
by Yoshinaga Kajimoto, Hidefumi Ota, Masahiro Kameda, Naosuke Nonoguchi, Motomasa Furuse, Shinji Kawabata, Toshihiko Kuroiwa, Toshihiro Takami and Masahiko Wanibuchi
Sensors 2025, 25(11), 3412; https://doi.org/10.3390/s25113412 - 28 May 2025
Viewed by 525
Abstract
The development of an intelligent ultrasonic aspirator controlled by a fiber-optic neoplasm sensor that detects 5-aminolevulinic acid-derived porphyrin fluorescence presents a significant advancement in glioma surgery. By leveraging the fluorescence phenomenon associated with 5-aminolevulinic acid in malignant neoplasms, this device integrates an excitation [...] Read more.
The development of an intelligent ultrasonic aspirator controlled by a fiber-optic neoplasm sensor that detects 5-aminolevulinic acid-derived porphyrin fluorescence presents a significant advancement in glioma surgery. By leveraging the fluorescence phenomenon associated with 5-aminolevulinic acid in malignant neoplasms, this device integrates an excitation laser and a high-sensitivity photodiode into the tip of an ultrasonic aspirator handpiece. This setup allows for real-time tumor fluorescence detection, which in turn modulates the aspirator’s power based on fluorescence intensity. Preliminary testing demonstrated high sensitivity, with the device capable of differentiating between weak, strong, and no fluorescence. The sensor sensitivity was comparable to human visual perception, enabling effective tumor differentiation. Tumors with strong fluorescence were effectively crushed, while the aspirator ceased operation in non-fluorescent areas, enabling precise tissue resection. Furthermore, the device functioned efficiently in bright surgical environments and was designed to maintain a clean sensor tip through constant saline irrigation. The system was successfully applied in a surgical case of recurrent glioblastoma, selectively removing tumor tissue while preserving surrounding brain tissue. This innovative approach shows promise for safer, more efficient glioma surgeries and may pave the way for sensor-based robotic surgical systems integrated with navigation technologies. Full article
(This article belongs to the Section Biomedical Sensors)
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15 pages, 15113 KiB  
Article
Performance Evaluation of GaAs and InGaAs Schottky Mixers at 0.3 THz: A Comparative Analysis Between Optical and Electrical Pumping in THz Wireless Communication Systems
by Javier Martinez-Gil, Iñigo Belio-Apaolaza, Jonas Tebart, Jose Luis Fernández Estévez, Diego Moro-Melgar, Cyril C. Renaud, Andreas Stöhr and Oleg Cojocari
Electronics 2025, 14(10), 1957; https://doi.org/10.3390/electronics14101957 - 11 May 2025
Viewed by 653
Abstract
Gallium Arsenide (GaAs) Schottky technology stands out for its superior performance in terms of conversion loss for terahertz mixers at room temperatures, which establishes it as a dominant solution in receivers for high-data-rate wireless communications. However, Indium Gallium Arsenide (InGaAs) Schottky mixers offer [...] Read more.
Gallium Arsenide (GaAs) Schottky technology stands out for its superior performance in terms of conversion loss for terahertz mixers at room temperatures, which establishes it as a dominant solution in receivers for high-data-rate wireless communications. However, Indium Gallium Arsenide (InGaAs) Schottky mixers offer a notable advantage in terms of reduced power requirements due to their lower barrier height, enabling optical pumping with the incorporation of photodiodes acting as photonic local oscillators (LOs). In this study, we present the first comparative analysis of GaAs and InGaAs diode technologies under both electrical and optical pumping, which are also being compared for the first time, particularly in the context of a wireless communication system, transmitting up to 80 Gbps at 0.3 THz using 16-quadrature amplitude modulation (QAM). The terahertz transmitter and the optical receiver’s LO are based on modified uni-traveling-carrier photodiodes (MUTC-PDs) driven by free-running lasers. The investigation covers a total of two mixers, including narrow-band GaAs and InGaAs. The results reveal that, despite InGaAs mixers exhibiting higher conversion loss, the bit error rate (BER) can be as low as that with GaAs. This is attributed to the purity of optically generated LO signals in the receiver. This work positions InGaAs Schottky technology as a compelling candidate for terahertz reception in the context of optical wireless communication systems. Full article
(This article belongs to the Section Optoelectronics)
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21 pages, 9171 KiB  
Review
Progress in Avalanche Photodiodes for Laser Ranging
by Zhenxing Liu, Ning An, Xingwei Han, Natalia Edith Nuñez, Liang Jin and Chengzhi Liu
Sensors 2025, 25(9), 2802; https://doi.org/10.3390/s25092802 - 29 Apr 2025
Viewed by 1107
Abstract
Laser ranging is a high-precision geodetic technique that plays an indispensable role in the field of geodynamics. Avalanche photodiodes (APDs) offer a series of advantages over other photodetector technologies, including photomultiplier tubes (PMTs) and superconducting single-photon detectors (SNSPDs). These advantages include high sensitivity, [...] Read more.
Laser ranging is a high-precision geodetic technique that plays an indispensable role in the field of geodynamics. Avalanche photodiodes (APDs) offer a series of advantages over other photodetector technologies, including photomultiplier tubes (PMTs) and superconducting single-photon detectors (SNSPDs). These advantages include high sensitivity, small size, high integration, and low power consumption, which have contributed to the widespread use of APDs in laser ranging applications. This paper analyses the key role of APDs in enhancing the accuracy and stability of laser ranging through the examination of application examples, including Si-APD and InGaAs/InP APD. Finally, based on the technological needs of laser ranging, the future development directions of APDs are envisioned, aiming to provide a reference for the research of photodetectors in high-precision and high-frequency laser ranging applications. Full article
(This article belongs to the Section Electronic Sensors)
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11 pages, 2434 KiB  
Article
2D/3D Perovskite Surface Passivation-Enabled High-Detectivity Near-Infrared Photodiodes
by Xuefeng Huangfu, Junyu Chen, Gaohui Ge, Jianyu Li, Jiazhen Zhang, Qinhao Lin, Hao Xu and Shu Min Wang
Sensors 2025, 25(9), 2740; https://doi.org/10.3390/s25092740 - 26 Apr 2025
Cited by 1 | Viewed by 765
Abstract
Due to high responsivity and wide spectral sensitivity, metal halide perovskite photodiodes have a wide range of applications in the fields of visible light and near-infrared photodetection. Specific detectivity is an important quality factor for high-performance perovskite-based photodiodes, while one of the keys [...] Read more.
Due to high responsivity and wide spectral sensitivity, metal halide perovskite photodiodes have a wide range of applications in the fields of visible light and near-infrared photodetection. Specific detectivity is an important quality factor for high-performance perovskite-based photodiodes, while one of the keys to achieving high detectivity is to reduce dark current. Here, 3-fluoro phenethylammonium iodide (3F-PEAI) was used to passivate the perovskite surface and form the two-dimensional (2D) perovskite on the three-dimensional (3D) perovskite surface. The as-fabricated passivated perovskite photodiodes with 2D/3D hybrid-dimensional perovskite heterojunctions showed two orders of magnitude smaller dark current, larger open circuit voltage and faster photoresponse, when compared to the control perovskite photodiodes. Meanwhile, it maintained almost identical photocurrent, achieving a high specific detectivity up to 2.4 × 1012 Jones and over the visible-near-infrared broadband photodetection. Notably, the champion photoresponsivity value of 0.45 A W−1 was achieved at 760 nm. It was verified that the 2D capping layers were able to suppress trap states and accelerate photocarrier collection. This work demonstrates strategic passivation of surface iodine vacancies, offering a promising pathway for developing ultrasensitive and low-power consumption photodetectors based on metal halide perovskites. Full article
(This article belongs to the Special Issue Smart Sensors Based on Optoelectronic and Piezoelectric Materials)
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15 pages, 5562 KiB  
Review
Avalanche Multiplication in Two-Dimensional Layered Materials: Principles and Applications
by Zhangxinyu Zhou, Mengyang Kang, Yueyue Fang, Piotr Martyniuk and Hailu Wang
Nanomaterials 2025, 15(9), 636; https://doi.org/10.3390/nano15090636 - 22 Apr 2025
Viewed by 711
Abstract
The avalanche multiplication effect, capable of significantly amplifying weak optical or electrical signals, plays a pivotal role in enhancing the performance of electronic and optoelectronic devices. This effect has been widely employed in devices such as avalanche photodiodes, impact ionization avalanche transit time [...] Read more.
The avalanche multiplication effect, capable of significantly amplifying weak optical or electrical signals, plays a pivotal role in enhancing the performance of electronic and optoelectronic devices. This effect has been widely employed in devices such as avalanche photodiodes, impact ionization avalanche transit time diode, and impact ionization field-effect transistors, enabling diverse applications in biomedical imaging, 3D LIDAR, high-frequency microwave circuits, and optical fiber communications. However, the evolving demands in these fields require avalanche devices with superior performance, including lower power consumption, reduced avalanche threshold energy, higher efficiency, and improved sensitivity. Over the years, significant efforts have been directed towards exploring novel device architectures and multiplication mechanisms. The emergence of two-dimensional (2D) materials, characterized by their exceptional light-matter interaction, tunable bandgaps, and ease of forming junctions, has opened up new avenues for developing high-performance avalanche devices. This review provides an overview of carrier multiplication mechanisms and key performance metrics for avalanche devices. We discuss several device structures leveraging the avalanche multiplication effect, along with their electrical and optoelectronic properties. Furthermore, we highlight representative applications of avalanche devices in logic circuits, optoelectronic components, and neuromorphic computing systems. By synthesizing the principles and applications of the avalanche multiplication effect, this review aims to offer insightful perspectives on future research directions for 2D material-based avalanche devices. Full article
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19 pages, 10147 KiB  
Article
Transmitters and Receivers for High Capacity Indoor Optical Wireless Communication
by Mikolaj Wolny, Eduardo Muller and Eduward Tangdiongga
Telecom 2025, 6(2), 26; https://doi.org/10.3390/telecom6020026 - 11 Apr 2025
Viewed by 2569
Abstract
In this paper, we present recent advancements in transmitter and receiver technologies for Optical Wireless Communication (OWC). OWC offers very wide license-free optical spectrum which enables very high capacity transmission. Additionally, beam-steered OWC is more power-efficient and more secure due to low divergence [...] Read more.
In this paper, we present recent advancements in transmitter and receiver technologies for Optical Wireless Communication (OWC). OWC offers very wide license-free optical spectrum which enables very high capacity transmission. Additionally, beam-steered OWC is more power-efficient and more secure due to low divergence of light. One of the main challenges of OWC is wide angle transmission and reception because law of conservation of etendue restricts maximization of both aperture and field of view (FoV). On the transmitter side, we use Micro Electro-Mechanical System cantilevers activated by piezoelectric actuators together with silicon micro-lenses for narrow laser beam steering. Such design allowed us to experimentally demonstrate at least 10 Gbps transmission over 100° full angle FoV. On the receiver side, we show the use of photodiode array, and Indium-Phosphide Membrane on Silicon (IMOS) Photonic Integrated Circuit (PIC) with surface grating coupler (SGC) and array of SGC. We demonstrate FoV greater than 32° and 16 Gbps reception with photodiode array. PIC receiver allowed to receive 100 Gbps WDM with single SGC, and 10 Gbps with an array of SGC which had 8° FoV in the vertical angle and full FoV in the horizontal angle. Our results suggest that solutions presented here are scalable in throughputs and can be adopted for future indoor high-capacity OWC systems. Full article
(This article belongs to the Special Issue Optical Communication and Networking)
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22 pages, 2583 KiB  
Article
Impact of Winemaking Techniques on the Phenolic Composition and Antioxidant Properties of Touriga Nacional Wines
by Zélia Branco, Filipa Baptista, Jessica Paié-Ribeiro, Irene Gouvinhas and Ana Novo Barros
Molecules 2025, 30(7), 1601; https://doi.org/10.3390/molecules30071601 - 3 Apr 2025
Cited by 1 | Viewed by 1143
Abstract
The Touriga Nacional grape variety is renowned in Portuguese red wines for its intense color and aromatic complexity, largely attributed to its rich phenolic composition. Several factors influence the phenolic profile of wines, including edapho-climatic conditions, grape variety, and winemaking techniques such as [...] Read more.
The Touriga Nacional grape variety is renowned in Portuguese red wines for its intense color and aromatic complexity, largely attributed to its rich phenolic composition. Several factors influence the phenolic profile of wines, including edapho-climatic conditions, grape variety, and winemaking techniques such as fermentation, maceration, barrel aging, and maturation. In this study, the technique for winemaking was the only controlled variable, allowing for a specific evaluation of its impact on phenolic composition and antioxidant capacity. Ten single-varietal Touriga Nacional wine samples from the 2019 vintage, produced in the Cima Corgo sub-region of the Douro by different wineries, were analyzed. The phenolic composition was determined using colorimetric methods to quantify total phenols, ortho-diphenols, flavonoids, anthocyanins, and tannins. Antioxidant capacity was assessed through the 2,2-diphenyl-1-picrylhydrazyl (DPPH), 2,2′-Azino-bis (3-ethylbenzothiazoline-6-sulfonic acid) diammonium salt (ABTS), and Ferric Reducing Antioxidant Power (FRAP) assays. Since all wines shared the same grape variety, region, and harvest year, the fermentation technique was the main differentiating factor, enabling a direct comparison of its influence on phenolic extraction and antioxidant properties. Additionally, Reversed-Phase High-Performance Liquid Chromatography with Photodiode Array Detection coupled with Mass Spectrometry (RP-HPLC-DAD-ESI-MS/MS) was employed to identify and quantify individual phenolic compounds. This study highlights the key role of winemaking techniques in modulating the phenolic composition and antioxidant potential of Touriga Nacional wines. Full article
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14 pages, 5286 KiB  
Article
Novel APD Array Configurations for Improved Detection Area and Frequency Response
by Xuan Zeng, Xuzhen Yu, Hewei Zhang, Yi Lu and Yanli Zhao
Sensors 2025, 25(6), 1671; https://doi.org/10.3390/s25061671 - 8 Mar 2025
Viewed by 668
Abstract
This paper presents two novel avalanche photodiode (APD) array structures designed to significantly enhance both detection area and bandwidth, overcoming the common trade-off between these parameters in conventional photodetectors. The impact of various parameters on the bandwidths of the two distinct array structures [...] Read more.
This paper presents two novel avalanche photodiode (APD) array structures designed to significantly enhance both detection area and bandwidth, overcoming the common trade-off between these parameters in conventional photodetectors. The impact of various parameters on the bandwidths of the two distinct array structures was theoretically simulated. Experimental validation using the self-fabricated 2 × 2 array on PCB board confirmed the bandwidth enhancement realized through inductor integration, with one APD array demonstrating an increase to 780 MHz (1.41 times greater) and another showing an increase to 1.21 GHz (1.35 times greater). Unlike prior works where array bandwidth is often lower than single detectors, our structures maintain high bandwidth while expanding the detection area. Structure 2 is particularly recommended over Structure 1 because of its lower noise, better signal-to-noise ratio (SNR), and reduced power consumption. Full article
(This article belongs to the Section Communications)
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11 pages, 9499 KiB  
Communication
A Complementary Metal-Oxide Semiconductor (CMOS) Analog Optoelectronic Receiver with Digital Slicers for Short-Range Light Detection and Ranging (LiDAR) Systems
by Yunji Song and Sung-Min Park
Micromachines 2025, 16(2), 215; https://doi.org/10.3390/mi16020215 - 13 Feb 2025
Viewed by 879
Abstract
This paper introduces an analog differential optoelectronic receiver (ADOR) integrated with digital slicers for short-range LiDAR systems, consisting of a spatially modulated P+/N-well on-chip avalanche photodiode (APD), a cross-coupled differential transimpedance amplifier (CCD-TIA) with cross-coupled active loads, a continuous-time linear equalizer [...] Read more.
This paper introduces an analog differential optoelectronic receiver (ADOR) integrated with digital slicers for short-range LiDAR systems, consisting of a spatially modulated P+/N-well on-chip avalanche photodiode (APD), a cross-coupled differential transimpedance amplifier (CCD-TIA) with cross-coupled active loads, a continuous-time linear equalizer (CTLE), a limiting amplifier (LA), and dual digital slicers. A key feature is the integration of an additional on-chip dummy APD at the differential input node, which enables the proposed ADOR to outperform a traditional single-ended TIA in terms of common-mode noise rejection ratio. Also, the CCD-TIA utilizes cross-coupled PMOS-NMOS active loads not only to generate the symmetric output waveforms with maximized voltage swings, but also to provide wide bandwidth characteristics. The following CTLE extends the receiver bandwidth further, allowing the dual digital slicers to operate efficiently even at high sampling rates. The LA boosts the output amplitudes to suitable levels for the following slicers. Then, the inverter-based slicers with low power consumption and a small chip area produce digital outputs. The fabricated ADOR chip using a 180 nm CMOS process demonstrates a 20 dB dynamic range from 100 μApp to 1 mApp, 2 Gb/s data rate with a 490 fF APD capacitance, and 22.7 mW power consumption from a 1.8 V supply. Full article
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22 pages, 3061 KiB  
Article
Integration of Artificial Neural Network Regression and Principal Component Analysis for Indoor Visible Light Positioning
by Negasa Berhanu Fite, Getachew Mamo Wegari and Heidi Steendam
Sensors 2025, 25(4), 1049; https://doi.org/10.3390/s25041049 - 10 Feb 2025
Cited by 3 | Viewed by 2450
Abstract
The advancement of artificial intelligence has brought visible-light positioning (VLP) to the forefront of indoor positioning research, enabling precise localization without additional infrastructure. However, the complex interplay between light propagation phenomena and environmental factors in indoor spaces presents significant challenges for VLP systems. [...] Read more.
The advancement of artificial intelligence has brought visible-light positioning (VLP) to the forefront of indoor positioning research, enabling precise localization without additional infrastructure. However, the complex interplay between light propagation phenomena and environmental factors in indoor spaces presents significant challenges for VLP systems. Additionally, the pose of the light-emitting diodes is prior unknown, adding another layer of complexity to the positioning process. Dynamic indoor environments further complicate matters due to user mobility and obstacles, which can affect system accuracy. In this study, user movement is simulated using a constructed dataset with systematically varied receiver positions, reflecting realistic motion patterns rather than real-time movement. While the experimental setup considers a fixed obstacle scenario, the training and testing datasets incorporate position variations to emulate user displacement. Given these dataset characteristics, it is crucial to employ robust positioning techniques that can handle environmental variations. Conventional methods, such as received signal strength (RSS)-based techniques, face practical implementation hurdles due to fluctuations in transmitted optical power and modeling imperfections. Leveraging machine learning techniques, particularly regression-based artificial neural networks (ANNs), offer a promising alternative. ANNs excel at modeling the intricate relationships within data, making them well-suited for handling the complex dynamics of indoor lighting environments. To address the computational complexities arising from high-dimensional data, this research incorporates principal component analysis (PCA) as a method for reducing dimensionality. PCA eases the computational burden, accelerates training speeds by normalizing the data, and reduces loss rates, thereby enhancing the overall efficacy and feasibility of the proposed VLP framework. Rigorous experimentation and validation demonstrate the potential of employing principal components. Experimental results show significant improvements across multiple evaluation metrics for a constellation comprising eight LEDs mounted in a rectangular structure measuring a room dimension of 12 m × 18 m × 6.8 m, with a photodiode (PD) receiver. Specifically, the mean squared error (MSE) values for the training and testing samples are 0.0062 and 0.0456 cm, respectively. Furthermore, the R-squared values of 99.31% and 94.74% for training and testing, respectively, signify a robust predictive performance of the model with low model loss. These findings underscore the efficacy of the proposed PCA-ANN regression model in optimizing VLP systems and providing reliable indoor positioning services. Full article
(This article belongs to the Special Issue Enhancing Indoor LBS with Emerging Sensor Technologies)
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22 pages, 6270 KiB  
Article
Poly(amic acid)-Polyimide Copolymer Interfacial Layers for Self-Powered CH3NH3PbI3 Photovoltaic Photodiodes
by Wonsun Kim, JaeWoo Park, HyeRyun Jeong, Kimin Lee, Sui Yang, Eun Ha Choi and Byoungchoo Park
Polymers 2025, 17(2), 163; https://doi.org/10.3390/polym17020163 - 10 Jan 2025
Cited by 1 | Viewed by 944
Abstract
Hybrid organohalide perovskites have received considerable attention due to their exceptional photovoltaic (PV) conversion efficiencies in optoelectronic devices. In this study, we report the development of a highly sensitive, self-powered perovskite-based photovoltaic photodiode (PVPD) fabricated by incorporating a poly(amic acid)-polyimide (PAA-PI) copolymer as [...] Read more.
Hybrid organohalide perovskites have received considerable attention due to their exceptional photovoltaic (PV) conversion efficiencies in optoelectronic devices. In this study, we report the development of a highly sensitive, self-powered perovskite-based photovoltaic photodiode (PVPD) fabricated by incorporating a poly(amic acid)-polyimide (PAA-PI) copolymer as an interfacial layer between a methylammonium lead iodide (CH3NH3PbI3, MAPbI3) perovskite light-absorbing layer and a poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT: PSS) hole injection layer. The PAA-PI interfacial layer effectively suppresses carrier recombination at the interfaces, resulting in a high power conversion efficiency (PCE) of 11.8% compared to 10.4% in reference devices without an interfacial layer. Moreover, applying the PAA-PI interfacial layer to the MAPbI3 PVPD significantly improves the photodiode performance, increasing the specific detectivity by 49 times to 7.82 × 1010 Jones compared to the corresponding results of reference devices without an interfacial layer. The PAA-PI-passivated MAPbI3 PVPD also exhibits a wide linear dynamic range of ~103 dB and fast response times, with rise and decay times of 61 and 18 µs, respectively. The improved dynamic response of the PAA-PI-passivated MAPbI3 PVPD enables effective weak-light detection, highlighting the potential of advanced interfacial engineering with PAA-PI interfacial layers in the development of high-performance, self-powered perovskite photovoltaic photodetectors for a wide range of optoelectronic applications. Full article
(This article belongs to the Special Issue Polymeric Materials in Energy Conversion and Storage, 2nd Edition)
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13 pages, 3375 KiB  
Article
Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiOx/Si Heterojunction Photodiodes
by Roumen Nedev, David Mateos-Anzaldo, Eddue Osuna-Escalante, Oscar Perez-Landeros, Mario Curiel-Alvarez, Esteban Osorio-Urquizo, Jhonathan Castillo-Saenz, Javier Lopez-Medina, Benjamin Valdez-Salas and Nicola Nedev
Inorganics 2025, 13(1), 11; https://doi.org/10.3390/inorganics13010011 - 3 Jan 2025
Cited by 1 | Viewed by 1637
Abstract
NiOx is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. Broadband photodetectors with high responsivity (R) were fabricated by depositing r.f.-sputtered NiOx layers on n-Si at room temperature (RT), 50 °C [...] Read more.
NiOx is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. Broadband photodetectors with high responsivity (R) were fabricated by depositing r.f.-sputtered NiOx layers on n-Si at room temperature (RT), 50 °C and 100 °C. In self-powered mode the RT diodes have R between 0.95 and 0.39 A/W for wavelengths between 365 and 635 nm, while at a reverse bias of −4 V, the responsivity increases to values between 22 A/W and 10.7 A/W for wavelengths in the same range. The increase of the deposition temperature leads to a decrease of R but also to a smaller reverse dark current. Thus, the 100 °C photodiodes might be more appropriate for applications where high responsivity is required, because of their smaller power consumption compared to the RT diodes. In addition, it was found that the increase of the deposition temperature leads to an increase of the diodes’ series resistance and the resistivity of NiOx. The effect of Rapid Thermal Annealing (RTA) on the properties of the photodiodes was studied. Annealing at 550 °C for 6 min leads to much higher responsivity compared to R of diodes with as-deposited NiOx. However, a disadvantage of the annealed diode is that the reverse current depends on the amplitude and polarity of previously applied bias voltage. The higher responsivity of the RTA photodiodes makes them useful as light sensors. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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