Search Results (519)

Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppression of short-channel effects. However, CNT FETs with large diameters and small band gaps exhibit obvious bipolarity, and gate-induced drain leakage (GIDL) contributes significantly to the off-state leakage current. Although the asymmetric gate strategy and feedback gate (FBG) structures proposed so far have shown the potential to suppress CNT FET leakage currents, the devices still lack scalability. Based on the analysis of the conduction mechanism of existing self-aligned gate structures, this study innovatively proposed a design strategy to extend the length of the source–drain epitaxial region (L_ext) under a vertically stacked architecture. While maintaining a high drive current, this structure effectively suppresses the quantum tunneling effect on the drain side, thereby reducing the off-state leakage current (I_off = 10⁻¹⁰ A), and has good scaling characteristics and leakage current suppression characteristics between gate lengths of 200 nm and 25 nm. For the sidewall gate architecture, this work also uses single-walled carbon nanotubes (SWCNTs) as the channel material and uses metal source and drain electrodes with good work function matching to achieve low-resistance ohmic contact. This solution has significant advantages in structural adjustability and contact quality and can significantly reduce the off-state current (I_off = 10⁻¹⁴ A). At the same time, it can solve the problem of off-state current suppression failure when the gate length of the vertical stacking structure is 10 nm (the total channel length is 30 nm) and has good scalability. Full article

As transistor dimensions continue to scale below 10 nm, traditional MOSFET architectures face increasing limitations from short-channel effects, gate leakage, and variability. FinFETs, especially junctionless FinFETs on silicon-on-insulator (SOI) substrates, offer improved electrostatic control and simplified fabrication, making them attractive for deeply scaled nodes. In this work, we propose a novel Stepped-Spacer Structured FinFET (S³-FinFET) that incorporates a three-layer HfO₂/Si₃N₄/HfO₂ spacer configuration designed to enhance electrostatics and suppress parasitic effects. Using 2D TCAD simulations, the S³-FinFET is evaluated in terms of key performance metrics, including transfer/output characteristics, ON/OFF current ratio, subthreshold swing (SS), drain-induced barrier lowering (DIBL), gate capacitance, and cut-off frequency. The results show significant improvements in leakage control and high-frequency behavior. These enhancements make the S³-FinFET particularly well-suited for Field-Programmable Gate Arrays (FPGAs), where power efficiency, speed, and signal integrity are critical to performance in reconfigurable logic environments. Full article

Titanium dioxide (TiO₂) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO₂ is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron–hole separation. Additionally, TiO₂ exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO₂ nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO₂/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD’s thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO₂ nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO₂-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology. Full article

Sepsis remains a global health emergency, demanding timely and accurate diagnostics to reduce morbidity and mortality. This review critically assesses the recent progress (2020–2025) in the development of electrochemical aptamer-based biosensors for sepsis detection. These biosensors combine aptamers’ high specificity and modifiability with the sensitivity and miniaturization potential of electrochemical platforms. The analysis highlights notable advances in detecting key sepsis biomarkers, such as C-reactive protein (CRP), procalcitonin (PCT), interleukins (e.g., interleukin-6 (IL-6), tumor necrosis factor-alpha (TNF-α)), lipopolysaccharides (LPSs), and microRNAs using diverse sensor configurations, including a field-effect transistor (FET), impedance spectroscopy, voltammetry, and hybrid nanomaterial-based systems. A comparative evaluation reveals promising analytical performance in terms of the limit of detection (LOD), rapid response time, and point-of-care (POC) potential. However, critical limitations remain, including variability in validation protocols, limited testing in real clinical matrices, and challenges in achieving multiplexed detection. This review underscores translational barriers and recommends future directions focused on clinical validation, integration with portable diagnostics, and interdisciplinary collaboration. By consolidating current developments and gaps, this work provides a foundation for guiding next-generation biosensor innovations aimed at effective sepsis diagnosis and monitoring. Full article

Field-effect transistor (FET) chemical sensors are essential for enabling sophisticated lifestyles and ensuring safe working environments. They can detect a wide range of analytes, including gaseous species (NO₂, NH₃, VOCs), ionic compounds, and biological molecules. Among the structural components of FETs, the gate configuration plays a vital role in controlling the semiconductor channel’s electrostatic environment, thereby strongly influencing sensing performance. Two-dimensional (2D) materials offer additional advantages in these sensors due to their rich surface chemistry and high sensitivity to external interactions. This review offers a comprehensive classification of 2D channel FET chemical sensors based on their gate configurations. Their working principles, fabrication strategies, and sensing performance are discussed in detail. A critical analysis of the advantages and challenges associated with each gate configuration is performed. This review aims to guide future research on the selection of appropriate device configurations for the development of excellent FET chemical sensors. Full article

Our study develops two configurations of MoS₂ and graphene heterostructures—MoS₂ on graphene (MG) and graphene on MoS₂ (GM)—to investigate biomolecule sensing in field-effect transistor (FET) biosensors. Leveraging MoS₂ and graphene’s distinctive properties, we employ specialized functionalization techniques for each configuration: graphene with MoS₂ on top uses a silane-based method with triethoxysilylbutyraldehyde (TESBA), and MoS₂ with graphene on top utilizes 1-pyrenebutyric acid N-hydroxysuccinimide ester (PBASE). Our research explores the application of MoS₂–Graphene heterostructures in biosensors, emphasizing the roles of synthesis, fabrication, and material functionalization in optimizing sensor performance. Through our experimental investigations, we have observed that doping MoS₂ and graphene leads to noticeable changes in the Raman spectrum and shifts in transfer curves. Techniques such as XPS, Raman, and AFM have successfully confirmed the biofunctionalization. Transfer curves were instrumental in characterizing the biosensing performance, revealing that GM configurations exhibit higher sensitivity and a lower limit of detection (LOD) compared to MG configurations. We demonstrate that GM heterostructures offer superior sensitivity and specificity in biosensing, highlighting their significant potential to advance biosensor technologies. This research contributes to the field by detailing the creation process of vertical MoS₂–graphene heterostructures and evaluating their effectiveness in accurate biomolecule detection, advancing biosensing technology. Full article

In this article, the role of downscaling in boosting the sensitivity of a novel label-free DNA sensor based on sub-10 nm dielectric-modulated transition metal dichalcogenide field-effect transistors (DM-TMD FET) is presented through a quantum simulation approach. The computational method is based on self-consistently solving the quantum transport equation coupled with electrostatics under ballistic transport conditions. The concept of dielectric modulation was employed as a label-free biosensing mechanism for detecting neutral DNA molecules. The computational investigation is exhaustive, encompassing the band profile, charge density, current spectrum, local density of states, drain current, threshold voltage behavior, sensitivity, and subthreshold swing. Four TMD materials were considered as the channel material, namely, MoS₂, MoSe₂, MoTe₂, and WS₂. The investigation of the scaling capability of the proposed label-free gate-all-around DM-TMDFET-based biosensor showed that gate downscaling is a valuable approach not only for producing small biosensors but also for obtaining high biosensing performance. Furthermore, we found that reducing the device size from 12 nm to 9 nm yields only a moderate improvement in sensitivity, whereas a more aggressive downscaling to 6 nm leads to a significant enhancement in sensitivity, primarily due to pronounced short-channel effects. The obtained results have significant technological implications, showing that miniaturization enhances the sensitivity of the proposed nanobiosensor. Full article

The U-shaped Metal-Oxide-Semiconductor Field-Effect Transistor (UMOS or trench FET) is one of the most widely used semiconductor power devices worldwide, increasingly replacing the traditional vertical double-diffused MOSFET (DMOSFET) in various applications due to its superior electrical performance. However, a detailed experimental comparison of ion-induced Single-Event Burnout (SEB) in similarly rated silicon (Si) UMOS and DMOS devices remains lacking. This study presents a comprehensive experimental comparison of ion-induced charge collection mechanisms and SEB susceptibility in similarly rated Si UMOS and DMOS devices. Charge collection mechanisms due to alpha particles from ²⁴¹Am radiation source are analyzed, and SEB cross sections induced by heavy ions from particle accelerators are directly compared. The implications of the unique gate structure of Si UMOSFETs on their reliability in harsh radiation environments are discussed based on technology computer-aided design (TCAD) simulations. Full article

The electrochemical impedance spectroscopy (EIS) is a measurement method for characterizing bio-recognition events of a sensor, such as field-effect transistor-based biosensors (BioFETs). Due to the lack of portable impedance spectroscopes, EIS applies mainly in laboratories preventing application-oriented use in the field. This work presents a portable impedance analyzer (PIA) providing a 4-channel EIS of BioFETs. It performs the analysis of the recorded spectra by determining the charge transfer resistance ${\mathrm{R}}_{\mathrm{ct}}$ with a power-saving algorithm. Therefore, a circle is fitted into the Nyquist representation of the Randles circuit, from whose zero crossings ${\mathrm{R}}_{\mathrm{ct}}$ can be determined. The introduced algorithm was evaluated on 100 simulated spectra of Randles circuits. To analyze the overall system, an adjustable reference circuit was developed that simulates configurable Randles circuits. Additional measurements with pH-sensitive ion-sensitive field-effect transistors (ISFETs) demonstrate the application of the measurement system with electrochemical sensors. Using simulated spectra, the circular fitting is able to detect ${\mathrm{R}}_{\mathrm{ct}}$ with a median accuracy of $1.2\%$ at an average nominal power of 40 mW and 3054 µs computing time. The PIA with the embedded implementation of the circuit fitting achieves a median error for R_ct of 4.2% using the introduced Randles circuit simulator (RCS). Measurements with ISFETs show deviations of 6.5 ± 2.8% compared to the complex non-linear least squares (CNLS), but is significantly faster and more efficient. The presented system allows a portable, power-saving performance of EIS. Future optimizations for a specific applications can improve the presented system and enable novel low-power and automated measurements of biosensors outside the laboratory. Full article

It is significant to search for ultrasensitive and accurate testing technology for point-of-care monitoring of common diseases at home; for example, monitoring the Aβ-42 level at any time is crucial for patients suffering from Alzheimer’s disease. However, accurately monitoring the Aβ-42 level in serum is often thwarted by the challenges in sensitivity and specificity due to the multiplicated contaminations and intricated biofluid environments. Here, we develop a graphene field-effect transistor (G-FET) sensor modified with a type of rigid DNA framework aptamer—tetrahedral DNA nanostructure (TDN) for Aβ-42 detection in serum. The Aβ-42 specific aptamer combined with the rigid tetrahedral nanostructure achieves higher binding affinity and better specificity and anti-fouling ability. The detectable concentration reaches 5 × 10⁻¹⁸ mol L⁻¹ in serum, lower than most other assay approaches. Moreover, the sensor rapidly detects the Aβ-42 level in 6 supernatant samples from mice blood within 5 min and achieves high accuracy. This sensitive and specific method enabled by the DNA tetrahedron G-FET sensor has great potential in the monitoring of Alzheimer’s disease and other diseases. Full article

This study introduces a cutting-edge, aptamer-based, planar electric, double-layer field-effect transistor (FET) system that offers both high sensitivity and specificity for the detection of troponin I (TnI). The proposed sensing platform leverages the signal amplification capabilities of FETs alongside the unique attributes of a planar electric double-layer design to address the limitations inherent in traditional ion-sensitive detectors, which are impacted by Debye length effects. By integrating TnI-specific aptamers, the system markedly enhances molecular recognition and transduction efficiency, achieving an impressive detection limit of $0.0001467 \mathrm{d}\mathrm{e}\mathrm{c}\mathrm{a}\mathrm{d}\mathrm{e}$. Furthermore, the sensor demonstrates a strong exponential linear response across a clinically relevant concentration range of 1 ng/mL to 100 ng/mL. This innovative approach underscores the potential of electric double-layer FET systems to advance biomarker detection technologies for medical diagnostics and point-of-care applications. Full article

Ecosystem pollution by mercury ions (Hg²⁺) is a major health concern, yet classical analytical methods for mercury analysis are limited. This paper reviews the advances in Hg²⁺ detection using DNA as recognition elements in the sensors. DNA as a recognition molecule is inexpensive, simple, and appropriate for real-time detection of Hg²⁺. This paper discusses the DNA-based sensors that were used for the detection of Hg²⁺. These can be carried out by electrochemistry, field effect transistors (FET), Raman spectroscopy, colorimetry, and fluorescence resonance energy transfer (FRET). The detection principles and the advantages of DNA in these sensors are also revealed. Finally, the paper provides an overview of prospects and potential challenges in the field. Full article

In recent years, field-effect transistors (FETs) based on graphene have attracted significant interest due to their unique electrical properties and their potential for biosensing and molecular detection applications. This study uses FETs with a nanocrystalline graphite (NCG) channel to detect DNA nucleobases. The exceptional electronic properties of NCG, and its high surface area, enable strong π–π stacking interactions with DNA nucleobases, promoting efficient adsorption and stabilization of the biomolecules. The direct attachment of nucleobases to the NCG channel leads to substantial changes in the device’s electrical characteristics, which can be measured in real time to assess DNA binding and sequence recognition. This method enables highly sensitive, label-free DNA detection, opening up new possibilities for rapid genetic analysis and diagnostics. Understanding the interactions between DNA nucleobases and graphene-based materials is crucial for advancing genetic research and biotechnology, paving the way for more accurate and efficient diagnostic tools. Full article

Colloidal quantum dots (QDs) and graphene hybrids have emerged as promising platforms for optoelectronic and biosensing applications due to their unique photophysical and electronic properties. This study investigates the fundamental mechanism underlying the photoluminescence (PL) quenching and recovery in graphene–QD hybrid systems using single-layer graphene field-effect transistors (SLG-FETs) and time-resolved photoluminescence (TRPL) spectroscopy. We demonstrate that PL quenching and its recovery are primarily driven by charge transfer, as evidenced by an unchanged fluorescence lifetime upon quenching. Density functional theory calculations reveal a significant charge redistribution at the graphene–QD interface, corroborating experimental observations. We also provide a simple analytical quantum mechanical model to differentiate charge transfer-induced PL quenching from resonance energy transfer. Furthermore, we leverage the charge transfer mechanism for ultrasensitive biosensing to detect biomarkers such as immunoglobulin G (IgG) at femtomolar concentrations. The sensor’s electrical response, characterized by systematic shifts in the Dirac point of SLG-FETs, confirms the role of analyte-induced charge modulation in PL recovery. Our findings provide a fundamental framework for designing next-generation graphene-based biosensors with exceptional sensitivity and specificity. Full article

Peritoneal dialysis (PD) is a vital treatment for end-stage renal disease patients, but its efficacy is often compromised by complications such as infections and peritoneal fibrosis. Biological field-effect transistors (BioFETs) present a promising solution for rapid, sensitive, and non-invasive detection of indicators and biomarkers associated with these complications, potentially enabling early intervention. However, BioFETs are yet to be adopted for PD monitoring. This review presents a forward-looking analysis of the capacity and potential integration of BioFETs into PD management systems, highlighting their capacity to monitor both routine indicators of dialysis efficiency and metabolic status, as well as specific biomarkers for complications such as inflammation and fibrosis. We examine the challenges in adapting BioFETs for PD applications, focusing on key areas for improvement, including sensitivity, specificity, stability, reusability, and clinical integration. Furthermore, we discuss various approaches to address these challenges, which are crucial for developing point-of-care (PoC) and multiplexed wearable devices. These advancements could facilitate continuous, precise, and user-friendly monitoring, potentially revolutionizing PD complication management and enhancing patient care. Full article