In this paper, the impact of SiN passivation on dynamic-RON degradation of AlGaN/GaN HEMTs devices is put in evidence. To this end, samples showing different SiN passivation stoichiometry are considered, labeled as Sample A and Sample B. For dynamic-...
This paper presents the electrical characterization of the on-resistance (RON) of on-wafer 100 V p-GaN power High-Electron-Mobility Transistors (HEMTs). This study assesses device degradation in the context of a monolithically integrated half-bridge...
A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resi...
High-voltage GaN switches can offer tremendous advantages over silicon counterparts for the development of high-efficiency switching-mode power converters at high commutation frequency. Nonetheless, GaN devices are prone to charge-trapping effects th...
Charge-trapping mechanisms observed in high-voltage GaN switches are responsible for the degradation of power converter efficiency due to modulation of the effective dynamic ON-resistance (
Dynamic on-resistance (RON) of commercial GaN on Si normally off high-electron-mobility transistor (HEMT) devices is a very important parameter because it is responsible for conduction losses that limit the power conversion efficiency of high-power s...
The dynamic on-resistance (RON) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. The non-monotonic performance of dynamic RON with off-state voltage ranging from 50 to 400 V is ascribed to th...
Due to their potential benefits, cold atmospheric plasmas (CAPs), as biotechnological tools, have been used for various purposes, especially in medical and agricultural applications. The main effect of CAP is associated with reactive oxygen and nitro...
The immune microenvironment plays a critical role in tumor growth and development. Immune activation within the tumor microenvironment is dynamic and can be modulated by tumor intrinsic and extrinsic signaling. The RON receptor tyrosine kinase is can...
Dynamic RON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes...
The potential of cold atmospheric plasma (CAP) in biomedical applications has received significant interest, due to its ability to generate reactive oxygen and nitrogen species (RONS). Upon exposure to living cells, CAP triggers alterations in variou...
In this paper, we analyze by means of numerical simulations the device design implications on the RON×QOSS Figure of Merit (FOM) in p-GaN power HEMTs to be employed in soft-switching converters. During switching, p-GaN power HEMTs experience dy...
To address trench-bottom electric-field concentration and the limited BV–Ron,sp trade-off of the conventional shielded-gate trench MOSFET (Conventional SGT), a floating-P-island-assisted silicon SGT MOSFET is proposed. Sentaurus TCAD is used to...
Radiation liver injury is a common complication of hepatocellular carcinoma radiotherapy. It is mainly caused by irreversible damage to the DNA of hepatocellular cells directly by radiation, which seriously interferes with metabolism and causes cell...
In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, large...
Citizen science has become a major source of scientific research in recent years. Many studies have concluded that citizen science projects not only contribute to the sciences but also considerably improve the scientific and environmental literacy of...
The Research Octane Number (RON) is a key quality parameter for gasoline, obtained offline through complex, time-consuming, and expensive standard methods. Measurements are usually only available a few times per week and after long delays, making pro...
This paper presents, for the first time, the structure-dependent parameter trade-off optimization on figure-of-merit (RonCoff) and power compression of AlGaN/GaN high electron mobility transistors (HEMTs) for radio frequency (RF) switch applications....
In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversi...
To improve the tradeoff between dynamic breakdown voltage (BVdyn) and specific on-resistance (Ron,sp) in SOI LDMOS devices, a double-step-doped SOI LDMOS with a P-type buried layer (DSD-PBL SOI LDMOS) is proposed. The device incorporates a double-ste...
The substantially lower breakdown electric field of Si compared to GaN necessitates thick buffer layers in Si-based GaN power devices for medium-voltage applications, significantly increasing cost. Recently, sapphire substrates, offering high electri...
Plasma medicine, or the biomedical application of cold atmospheric plasma (CAP), is an expanding field within plasma research. CAP has demonstrated remarkable versatility in diverse biological applications, including cancer treatment, wound healing,...
As a new field of oxidative stress-based therapy, cold physical plasma is a promising tool for several biomedical applications due to its potential to create a broad diversity of reactive oxygen and nitrogen species (RONS). Although proposed, the imp...
A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehens...
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where...
The explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices. This paper focuses on research on high-efficiency and high-reliability low-voltage p-...
Charge carrier traps due to crystal defects in GaN on Si HEMT devices are responsible for dynamic performance degradation, long-term reliability limitations, and peculiar failure modes. The behavior of traps depends on many variables including hetero...
In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off...
In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but...
Steady state and dynamic modelling and simulation of catalytic reforming unit of Kaduna Refining & Petrochemical Company, NNPC (Nigeria) was carried to find out the behaviour of the reactions under both steady and unsteady state conditions. The b...
In this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA...
In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer...
A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. The simulation results show that the proposed MOSFET has good static performan...
While normal levels of reactive oxygen and nitrogen species (RONS) are required for proper organismal function, increased levels result in oxidative stress. Oxidative stress may be managed via the scavenging activities of antioxidants (e.g., curcumin...
A high threshold voltage (VTH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (VTH = 4.25 ± 0.1 V at IDS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiN...
In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of the trenche...
Substrate voltage (VSUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be...
AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the devic...
Ozone (O3) is a reactive oxidant increasingly applied in biomedical settings, yet its dose-dependent effects on innate immune cells, particularly those from non-human species, remain insufficiently defined. Within a One Health framework, this study e...
The SiC MOSFET with an integrated SBD (SBD-MOSFET) exhibits excellent performance in power electronics. However, the static and dynamic characteristics of this device are influenced by a multitude of parameters, and traditional TCAD simulation method...
Plasma-activated water (PAW) is a liquid enriched with reactive oxygen and nitrogen species (RONS), which impart antimicrobial and bioactive properties. In this study, PAW generated in liquid or gas phase under nitrogen or oxygen atmospheres was char...
This paper introduces the conceptual design of a submersible seaplane that merges the maturity of the wing-in-ground (WIG or ekranoplan) crafts and seaplanes with covert hybrid underwater insertion, travel, and recovery. WIG crafts have a higher lift...
Modelling sea conditions is a complex task that requires a comprehensive analysis, considering various influencing factors. Observed and unobserved factors jointly play a role in the definition of sea conditions. Here, we consider finite mixtures of...
Financial stability analysis requires volatility modeling, especially in emerging nations where pension fund systems are very vulnerable to macrofinancial risks. In order to examine the volatility dynamics of Romania’s private pension system, t...
Optimizing physical training regimens to increase muscle aerobic capacity requires an understanding of the internal processes that occur during exercise that initiate subsequent adaptation. During exercise, muscle cells undergo a series of metabolic...
Background/Objectives: Globally, healthcare systems face challenges in optimizing performance, particularly in the wake of the COVID-19 pandemic. This study focuses on the analysis and forecasting of key performance indicators (KPIs) for the County E...
By harnessing gasoline’s low reactivity for partially premixed combustion promotion, gasoline compression ignition (GCI) combustion shows the potential to produce markedly improved NOx-soot trade-off with high fuel efficiency compared to conven...
Mercury exposure has been linked to male infertility. Given that mercury chloride (HgCl2) may promote an oxido-inflammatory milieu associated with pathophysiological derangements, it is hypothesised that Thymoquinone (TQ), an antioxidant and anti-inf...