Search Results (741)

Hexagonal boron nitride nanosheets (BNNSs) have emerged as one of the most promising materials for next-generation thermal management, driven by the intensifying heat dissipation demands of highly integrated electronics. While conventional polymer-based packaging materials are lightweight and electrically insulating, their intrinsically low thermal conductivity severely limits effectiveness in high-power devices. The remarkable thermal transport, wide bandgap, chemical robustness, and mechanical strength of BNNSs offer a compelling solution. This review provides a comprehensive overview of the structural and physical foundations that underpin the anisotropic yet exceptional thermal properties of bulk h-BN and BNNSs. We examine major synthesis routes including tape exfoliation, ball milling, liquid-phase exfoliation, chemical vapor deposition, and metal–organic chemical vapor deposition, highlighting how process mechanisms govern nanosheet thickness, defect density, crystallinity, and scalability. Particular emphasis is placed on the advantages of BNNSs in thermal management systems, from their use as high-efficiency thermally conductive fillers and advanced thermal interface materials. We conclude by examining key challenges including large-area growth, filler alignment, and interfacial engineering, and by presenting future research directions that could enable the practical deployment of BNNSs-based thermal management technologies. Full article

Silicon carbide (SiC) MOSFETs, as one of the representative power electronic devices, have faced reliability challenges due to threshold voltage (V_th) instability under dynamic gate stress. To explore the underlying mechanisms, this work investigates 4H-SiC MOS structures (P-MOS and N-MOS) under AC bias temperature instability (AC BTI) stress, utilizing a laser to generate minority carriers and simulate realistic switching conditions. Through combined capacitance–voltage (C-V) and gate current–voltage (J_g-V_g) characterizations on P-MOS and N-MOS devices before and after degradation at different temperatures, we reveal a critical temperature dependence in defect interactions. At room temperature, degradation is dominated by electron trapping in shallow interface states and near-interface traps (NITs). In contrast, high-temperature stress activates charge exchange with deep-level, slow states. Notably, a positive V_FB shift is consistently observed in both N-MOS and P-MOS devices under AC stress, confirming that electron trapping is the dominant cause of the commonly observed positive V_th shift in SiC MOSFETs. These findings clarify the distinct defect-mediated mechanisms governing dynamic V_th instability in SiC devices, providing fundamental insights for interface engineering and reliability assessment. Full article

Wireless Power Transfer (WPT) has become a pivotal technology, enabling the battery-free operation of Internet of Things (IoT) and biomedical devices while supporting environmental sustainability. This review provides a comprehensive analysis of microstrip patch antennas (MPAs) operating at the 5.8 GHz Industrial, Scientific, and Medical (ISM) band, emphasizing their advantages over the more commonly used 2.4 GHz band. A detailed and systematic classification framework for MPA architectures is introduced, covering single-element, multi-band, ultra-wideband, array, MIMO, wearable, and rectenna systems. The review examines advanced optimization methodologies, including Defected Ground Structures (DGS), Electromagnetic Bandgap (EBG) structures, Metamaterials (MTM), Machine Learning (ML), and nanomaterials, each contributing to improvements in gain, bandwidth, efficiency, and device miniaturization. Unlike previous surveys, this work offers a performance-benchmarked classification specifically for 5.8 GHz MPAs and provides a quantitative assessment of key trade-offs, such as efficiency versus substrate cost. The review also advocates for a shift toward Power Conversion Efficiency (PCE)-centric co-design strategies. The analysis identifies critical research gaps, particularly the ongoing disparity between simulated and experimental performance. The review concludes by recommending multi-objective optimization, integrated antenna-rectifier co-design to maximize PCE, and the use of advanced materials and computational intelligence to advance next-generation, high-efficiency 5.8 GHz WPT systems. Full article

Tin selenide (SnSe) is a sustainable, lead-free IV–VI semiconductor whose layered orthorhombic crystal structure induces pronounced electronic and phononic anisotropy, enabling diverse energy-related functionalities. This review systematically summarizes recent progress in understanding the structure–property–processing relationships that govern SnSe performance in thermoelectric and optoelectronic applications. Key crystallographic characteristics are first discussed, including the temperature-driven Pnma–Cmcm phase transition, anisotropic band and valley structures, and phonon transport mechanisms that lead to intrinsically low lattice thermal conductivity below 0.5 W m⁻¹ K⁻¹ and tunable carrier transport. Subsequently, major synthesis strategies are critically compared, spanning Bridgman and vertical-gradient single-crystal growth, spark plasma sintering and hot pressing of polycrystals, as well as vapor- and solution-based thin-film fabrication, with emphasis on process windows, stoichiometry control, defect chemistry, and microstructure engineering. For thermoelectric applications, directional and temperature-dependent transport behaviors are analyzed, highlighting record thermoelectric performance in single-crystal SnSe at hi. We analyze directional and temperature-dependent transport, highlighting record thermoelectric figure of merit values exceeding 2.6 along the b-axis in single-crystal SnSe at ~900 K, as well as recent progress in polycrystalline and thin-film systems through alkali/coinage-metal doping (Ag, Na, Cu), isovalent and heterovalent substitution (Zn, S), and hierarchical microstructural design. For optoelectronic applications, optical properties, carrier dynamics, and photoresponse characteristics are summarized, underscoring high absorption coefficients exceeding 10⁴ cm⁻¹ and bandgap tunability across the visible to near-infrared range, together with interface engineering strategies for thin-film photovoltaics and broadband photodetectors. Emerging applications beyond energy conversion, including phase-change memory and electrochemical energy storage, are also reviewed. Finally, key challenges related to selenium volatility, performance reproducibility, long-term stability, and scalable manufacturing are identified. Overall, this review provides a process-oriented and application-driven framework to guide the rational design, synthesis optimization, and device integration of SnSe-based materials. Full article

Thin-film lithium niobate (TFLN) electro-optic modulators (EOMs) offer distinct advantages, including high speed, broad bandwidth, and low power consumption. However, their large size hinders the density of integration, which trades off with the half-wave voltage. Photonic crystal (PC) structures can effectively reduce the device footprint via the slow-light effect; however, they experience significant losses due to fabrication defects and sharp corners. Here, we theoretically demonstrate an ultracompact Mach–Zehnder interferometer (MZI) EOM based on a TFLN valley photonic crystal (VPC) structure. The design can achieve a high forward transmittance (>0.8) due to defect-immune unidirectional propagation in the VPC, enabled by the unique spin-valley locking effect. The EOM, with a small footprint of 21 μm × 17 μm, achieves an extinction ratio of 16.13 dB and a modulation depth of 80%. The design can be experimentally fabricated using current nanofabrication techniques, making it suitable for broad applications in optical communications. Full article

Supercapacitors based on mixed metal oxides are being developed as potential devices for large-scale energy storage applications with physical flexibility, thanks to their low cost and good electrochemical performance. This work demonstrates a novel approach to enhancing the electrochemical performance of bismuth–cerium oxide BiCeO₃ (BC) through thiourea doping. The incorporation of sulfur, confirmed by EDS, induced significant structural modifications, including a reduction in crystallite size from 42.5 nm to 34.8 nm and the emergence of new diffraction planes (002) and (222) in XRD patterns. These changes, indicative of successful lattice doping, yielded a more nanostructured morphology with increased active surface area and a 20% reduction in the optical band gap. Electrochemically, the thiourea-doped BiCeO₃ (BCT) electrode delivered a marked improvement, exhibiting a specific capacitance of 150 F·g⁻¹ at 25 mV·s⁻¹, a 17.2% increase over the pure BiCeO₃ (128 F·g⁻¹). Furthermore, BCT demonstrated superior rate capability and a 43% reduction in overall impedance, underscoring enhanced charge transfer kinetics and ionic conductivity. The synergy between sulfur-induced structural defects, increased electroactive surface area, and improved electronic structure establishes thiourea doping as an effective strategy for developing high-performance BiCeO₃-based supercapacitors. Full article

Quick and reliable in situ non-destructive assessment of the material structure is especially critical in the case of measurement of rail defects concerning the demands of quick, uninterrupted transportation and safety. This paper presents the test results of a patented measuring head that is able to perform ultrasonic rail defect detection at speeds of up to 120 km/h. The experimental data was collected and discussed. Statistical analysis was performed in terms of bottom echo drop as a function of velocity, pressing force, and film thickness between the sensor and the rail material surface, as well as the coupling fluid stream intensity. The results proved the feasibility of the device for usage at high speeds for the state monitoring of rails in service. Full article

Utilization of natural processes can reduce the complexity and production cost of any device by limiting the necessary steps in the production scheme, especially when it comes to fibers with periodic changes in refractive index. One such process is the nematic–isotropic phase separation of liquid crystal-based composite confined in 1D space. In this paper, we analyze the behavior of polymer-stabilized liquid crystal-based self-assembled periodic structures in an external electric field. We performed a detailed analysis regarding the reorientation of liquid crystal molecules under two orthogonal directions of the external electric field applied to the examined sample. It was demonstrated that the period of the polymerized structure remains constant until full reorientation, as the electric field induces the formation of new periodic defects in LC orientation. Consequently, the structure’s effective birefringence changes quite drastically, and this observed change depends on the direction of the electric field vector. The obtained results seem promising when it comes to application of the proposed periodic structures as voltage or electric field sensors operating as long-period fiber gratings or fiber Bragg gratings for the visible or near-infrared spectral regions. Full article

Metal halide perovskite (MHP)-based heterojunctions have become a forefront area in the research of optoelectronic functional materials due to their unique layered crystal structure, tunable band gaps, and exceptional optoelectronic properties. Recent studies have demonstrated that interface charge transfer is a crucial factor in determining the optoelectronic performance of the heterojunction devices. By constructing heterojunctions between MHPs and two-dimensional (2D) materials such as graphene, MoS₂, and WS₂, efficient electron–hole separation and transport can be achieved, significantly extending carrier lifetimes and suppressing non-radiative recombination. This results in enhanced response speed and energy conversion efficiency in photodetectors, photovoltaic devices, and light-emitting devices (LEDs). In these heterojunctions, the thickness of the MHP layer, interface defect density, and band alignment significantly influence carrier dynamics. Furthermore, techniques such as interface engineering, molecular passivation, and band engineering can effectively optimize charge separation efficiency and improve device stability. The integration of multilayer heterojunctions and flexible designs also presents new opportunities for expanding the functionality of high-performance optoelectronic devices. In this review, we systematically summarize the charge transfer mechanisms in MHP-based heterojunctions and highlight recent advances in their optoelectronic applications. Particular emphasis is placed on the influence of interfacial coupling on carrier generation, transport, and recombination dynamics. Furthermore, the ultrafast dynamic behaviors and band-engineering strategies in representative heterojunctions are elaborated, together with key factors and approaches for enhancing charge transfer efficiency. Finally, the potential of MHP heterojunctions for high-performance optoelectronic devices and emerging photonic systems is discussed. This review aims to provide a comprehensive theoretical and experimental reference for future research and to offer new insights into the rational design and application of flexible optoelectronics, photovoltaics, light-emitting devices, and quantum photonic technologies. Full article

Scandium (Sc)-doped aluminum nitride (AlN) thin films are critical for high-frequency, high-power surface acoustic wave (SAW) devices. A composite Sc doping strategy for AlN thin films is proposed, which combines magnetron sputtering pre-doping with post-doping via ion implantation to achieve gradient doping and tailor microstructural characteristics. The crystal structure, surface composition, and microstructural defects of the films were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). Results indicate that the Sc content in pre-doped ScAlN films was optimized from below 10 at.% to above 30 at.%, while the films maintained a stable (002) preferred orientation. XPS analysis confirmed the formation of Sc-N bonds, and EDS mapping revealed a gradient distribution of Sc within the subsurface region, extending to a depth of approximately 200 nm. High-resolution TEM revealed localized lattice distortions and surface amorphization induced by ion implantation. This work demonstrates the feasibility of ion implantation as a supplementary doping technique, offering theoretical insights for developing AlN films with high Sc doping concentrations and structural stability. These findings hold significant potential for optimizing the performance of high-frequency, high-power SAW devices. Full article

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in heterogeneous substrates. Herein, we systematically investigate the electrical performance and reliability of GaN-on-GaN HEMTs in comparison to conventional GaN-on-SiC HEMTs via DC characterization, reverse gate step stress, off-state drain step stress, and on-state electrical stress tests. Notably, the homogeneous epitaxial structure of GaN-on-GaN devices reduces dislocation density by 83.3% and minimizes initial tensile stress, which is obtained through HRXRD and Raman spectroscopy. The GaN-on-GaN HEMTs exhibit a record BFOM of 950 MW/cm², enabled by a low specific on-resistance (R_ON-SP) of 0.6 mΩ·cm² and a high breakdown voltage (BV) of 755 V. They withstand gate voltages up to −200 V and drain voltages beyond 200 V without significant degradation, whereas GaN-on-SiC HEMTs fail at −95 V (reverse gate stress) and 150 V (off-state drain stress). The reduced dislocation density suppresses leakage channels and defect-induced degradation, as confirmed by post-stress Schottky/transfer characteristics and Frenkel–Poole emission analysis. These findings establish GaN-on-GaN technology as a transformative solution for power electronics, offering a unique combination of high efficiency and long-term stability for demanding high-voltage applications. Full article

Silicon carbide (SiC) has attracted increasing attention as a robust photoelectrode material for solar water splitting due to its exceptional chemical stability, mechanical strength, and resistance to photocorrosion. Recent advances in nanostructuring—particularly the development of nanoporous SiC architectures—have dramatically improved light absorption, charge separation, and charge transport in this material. This review summarizes current strategies to enhance the PEC performance of SiC, including hierarchical nanostructuring, defect engineering (e.g., doping to tailor band structure), heterojunction formation with co-catalysts, and incorporation of plasmonic nanoparticles. Remaining challenges are discussed, notably the wide band gap of common SiC polytypes (limiting visible-light utilization) and rapid charge-carrier recombination. In addition, we examine the techno-economic prospects for SiC-based PEC systems, outlining the efficiency and durability benchmarks required for commercial hydrogen production. Finally, we propose future research directions to achieve efficient, durable SiC photoelectrodes and to guide the development of scalable PEC water-splitting devices. This review uniquely integrates material design strategies with techno-economic evaluation, providing a roadmap for SiC-based PEC systems. Full article

Lead halide perovskites, exemplified by methylammonium (MA) lead iodide (MAPbI₃), combine strong optical absorption, long carrier diffusion lengths, and defect-tolerant electronic structure with facile processing, making them attractive for photovoltaics and radiation detection. Yet, their behavior under electron irradiation remains insufficiently understood, limiting deployment in space and dosimetry contexts. Here, we employ Monte Carlo simulations (Geant4) to model electron interactions with MAPbI₃ across energies from 0.1 to 100 MeV and absorber thicknesses from 10 μm to 1 cm. We quantify deposited energy, event statistics, energy per interaction, non-ionizing energy loss, and dominant radiation effects. The results reveal strong thickness-dependent regimes: thin photovoltaic-type layers (~hundreds of nanometers) are largely transparent to MeV electrons, minimizing bulk damage but allowing localized ionization, exciton self-trapping, and photoexcitation-driven ion migration. Although localized excitations can temporarily improve carrier collection under short-term exposure, their cumulative effect drives ionic rearrangement and defect growth, ultimately reducing device stability. In contrast, thicker detector-type films (10–100 μm) sustain multiple scattering and ionization cascades, enhancing sensitivity but accelerating defect accumulation. At centimeter scales, energy deposition saturates, enabling bulk-like absorption for high-flux dosimetry. Overall, electron irradiation in MAPbI₃ is dominated by electronic excitation rather than ballistic displacements, underscoring the need to optimize thickness and composition to balance efficiency, sensitivity, and durability. Full article

Microelectronic packaging is crucial for protecting, powering, and interconnecting semiconductor chips, playing a critical role in the functionality and reliability of electronic devices. With the growth in complexity and miniaturization of these products, the implementation of efficient inspection techniques becomes crucial in preventing failures that may result in device malfunctions. This review paper examines the progress made in utilizing Scanning Acoustic Microscopy (SAM) to assess the structural integrity of microelectronic systems within the broader field of Nondestructive Evaluation/Testing (NDE/T) methods. With an exclusive emphasis on SAM, we point out SAM technological advancements in multi-die stacking, Through Silicon Vias (TSV), and hybrid bonding inspection that improve inspection sensitivity and resolution required to be prepared for upcoming challenges accompanying 3D- and heterogeneous integration architectures. Some of these approaches compromise the depth of inspection for the benefit of lateral resolution, while others do not sacrifice the in-depth range of evaluation. These developments are of the utmost importance in addressing the substantial obstacles associated with examining microelectronic packages, facilitating the early detection of potential failures, and enhancing the reliability and robustness of semiconductor devices. Furthermore, our discussion consists of the fundamental principles and practical approaches of SAM. It also examines recent investigations that integrate SAM with machine learning concepts and the application of deep learning models in order to automate defect detection and characterization, thus substantially augmenting the efficiency of microelectronic package assessments. Full article

As a fundamental and indispensable component of modern electronic devices, the printed circuit board (PCB) has a complex structure and highly integrated functions, with its manufacturing quality directly affecting the stability and reliability of electronic products. However, during large-scale automated PCB production, its surfaces are prone to various defects and imperfections due to uncontrollable factors, such as diverse manufacturing processes, stringent machining precision requirements, and complex production environments, which not only compromise product functionality but also pose potential safety hazards. At present, PCB defect detection in industry still predominantly relies on manual visual inspection, the efficiency and accuracy of which fall short of the automation and intelligence demands in modern electronics manufacturing. To address this issue, in this paper, we have made improvements based on the classical Faster-RCNN object detection framework. Firstly, ResNet-101 is employed to replace the conventional VGG-16 backbone, thereby enhancing the ability to perceive small objects and complex texture features. Then, we extract features from images by using deformable convolution in the backbone network to improve the model’s adaptive modeling capability for deformed objects and irregular defect regions. Finally, the Convolutional Block Attention Module is incorporated into the backbone, leveraging joint spatial and channel attention mechanisms to improve the effectiveness and discriminative power of feature representations. The experimental results demonstrate that the improved model achieves a 4.5% increase in mean average precision compared with the original Faster-RCNN. Moreover, the proposed method exhibits superior detection accuracy, robustness, and adaptability compared with mainstream object detection models, indicating strong potential for engineering applications and industrial deployment. Full article