Search Results (3,956)

As an emerging platform for high-precision sensing, integrated silicon-waveguide-based cavity optomechanical devices face a critical fabrication challenge in the co-fabrication of silicon-on-insulator (SOI) micromechanical structures and optical waveguides: the silicon oxide (SiO₂) layer beneath the waveguides is susceptible to etching during hydrofluoric acid (HF) release of the microstructures, leading to waveguide collapse and significantly reducing production yields. This study proposes a novel selective protection process based on a magnesium fluoride (MgF₂) thin film to address the critical challenge of long-range waveguide collapse during hydrofluoric acid (HF) etching. By depositing a MgF₂ protective layer over the waveguide regions via optical coating technology, localized protection of specific SiO₂ areas during HF etching is achieved. The experimental results demonstrate the successful release of silicon waveguides with lengths of up to 5000 μm and a significant improvement in production yield. This work provides a compatible and efficient strategy for the fabrication of robust photonic–microelectromechanical integrated devices. Full article

Direct growth of high-quality, Bernal-stacked bilayer graphene (BLG) on dielectric substrates is crucial for electronic and optoelectronic devices, yet it remains hindered by poor film quality, uncontrollable thickness, and high-density grain boundaries. In this work, a facile, catalyst-assisted method to grow high-quality, single-crystalline BLG directly on dielectric substrates (SiO₂/Si, sapphire, and quartz) was demonstrated. A single-crystal monolayer graphene template was first employed as a seed layer to facilitate the homoepitaxial synthesis of single-crystalline BLG directly on insulating substrates. Nanostructure Cu powders were used as the remote catalysis to provide long-lasting catalytic activity during the graphene growth. Transmission electron microscopy confirms the single-crystalline nature of the resulting BLG domains, which validates the superiority of the homoepitaxial growth technique. Raman spectroscopy and electrical measurement results indicate that the quality of the as-grown BLG is comparable to that on metal substrate surfaces. Field-effect transistors fabricated directly on the as-grown BLG/SiO₂/Si showed a room temperature carrier mobility as high as 2297 ± 3 cm² V⁻¹ s⁻¹, which is comparable to BLG grown on Cu and much higher than that reported on in-sulators. Full article

High-electron-mobility transistors (HEMTs) are characterized by the formation of a two-dimensional electron gas (2DEG) induced by the polarization effects. Considerable studies have been conducted to improve the electrical properties of HEMTs by regulating the 2DEG density. In this study, a Si/GaN heterojunction was fabricated through the transfer of a heavily boron-doped Si nanomembrane. The holes in the p-Si layer integrated on top of the HEMT not only increased the surface positive charge, which eventually increased the density of electrons at the AlGaN/GaN interface, but also acted as a passivation layer to improve the performance of AlGaN/GaN HEMTs. Electrical characterization revealed that the maximum drain current increased from 668 mA/mm to 740 mA/mm, and the maximum transconductance improved from 200.2 mS/mm to 220.4 mS/mm. These results were due to the surface positive charge induced by the p-Si layer, which lowered the energy band diagram and increased the electron concentration at the AlGaN/GaN interface by a factor of 1.4 from 1.52 × 10²⁰ cm⁻³ to 2.11 × 10²⁰ cm⁻³. Full article

In this study, structural optimization and trap effect analysis of a 4H-SiC–based p–i–n betavoltaic (BV) cell were performed using Silvaco ATLAS TCAD (version 5.30.0.R) simulations combined with an electron-beam (e-beam) irradiation model. First, the optimum device structure was derived by varying the thickness of the intrinsic layer (i-layer), the thickness of the p-layer, and the doping concentration of the i-layer. Under 17 keV e-beam irradiation, the electron–hole pairs generated in the i-layer were effectively separated and transported by the internal electric field, thereby contributing to the short-circuit current density (J_SC), open-circuit voltage (V_OC), and maximum output power density (P_{out_max}). Subsequently, to investigate the effects of traps, donor- and acceptor-like traps were introduced either individually or simultaneously, and their densities were varied to evaluate the changes in device performance. The simulation results revealed that traps degraded the performance through charge capture and recombination, with acceptor-like traps exhibiting the most pronounced impact. In particular, acceptor-like traps in the i-layer significantly reduced V_OC from 2.47 V to 2.07 V and P_{out_max} from 3.08 μW/cm² to 2.28 μW/cm², demonstrating that the i-layer is the most sensitive region to performance degradation. These findings indicate that effective control of trap states within the i-layer is a critical factor for realizing high-efficiency and high-reliability SiC-based betavoltaic cells. Full article

In this work, molecular and elemental spectroscopic analyses were carried out on the preparation base, the paintings, the repaintings, and the gilding of an 18th century sacred sculpture of Our Lady found on Anhatomirim Island, where the Santa Cruz fortress was built in 1739 in the state of Santa Catarina, southern Brazil. The preparation base of the sculpture was characterized as gypsum (calcium sulfate dihydrate, (CaSO₄.2H₂O) [µ-Raman, SEM-EDS], applied directly to the wooden support. The blue paint comprised a mixture of Prussian blue (Fe₄[Fe(CN)₆]₃) and ultramarine (Na_xAl₆Si₆O₂₄S_x) [µ-Raman, FTIR, SEM-EDS]; hematite (Fe₂O₃) was identified in the brown paint [µ-Raman, SEM-EDS]; and the white paint consisted of lead white (2 PbCO₃·Pb(OH)₂) [µ-Raman, FTIR, SEM-EDS]. Repainted areas were identified by the presence of lithopone (ZnS + BaSO₄) [µ-Raman, SEM-EDS, FTIR], likely resulting from later interventions. In the gilded areas, gold was identified along with traces of iron [SEM-EDS], indicating a lower-quality gilding compared to, for example, silver alloys. Lead white was also identified in the polychrome areas, where it served to produce different tones in the painting. FTIR analyses revealed traces of aged oil used as a binder in the older layers. Mineral oil was detected in some samples, which may indicate that wax was used as a protective layer on the sculpture. The results will assist professionals in the iconographic characterization of the sacred image of Our Lady and in the conservation and restoration processes based on the identified constituent materials. Full article

Flexible polyurethane foam (FPUF) is widely used in buffer protection, biomedical, and wearable fields due to its light weight, high resilience, and adjustable mechanical properties. However, the traditional water foaming system is often accompanied by bottleneck problems such as cyclic fatigue attenuation, insufficient thermal stability, and surface hydrophilicity while achieving low density. In this study, a dense Si-O-Si cross-linked layer was in situ constructed on the surface of the foam by systematically regulating the water content of the foaming agent (1.5~2.5 wt%) and coupling with methyltrimethoxysilane (MTMS) chemical vapor deposition. Experiments show that the foam foamed with 2 wt% water content still maintains 0.0466 MPa compressive strength and 0.0532 MPa compressive modulus (modulus loss is only 16.6%) after 500 cycles of compression at 90% strain after MTMS deposition. MTMS modification drives the surface wettability to change from hydrophilic (70.4°) to hydrophobic (128.7°), and significantly improves thermal stability (the carbon residue rate at 800 °C increased to 25.5%, an increase of 59.4%). This study not only improves the resilience, but also endows the FPUF surface with hydrophobicity and thermal protection ability, which provides the feasibility for its wide application. Full article

Silicon (Si) is a promising high-capacity anode material for lithium–ion batteries but faces challenges such as severe volume fluctuations during cycles and the formation of unstable solid-electrolyte interphase films on the electrode surface. To address these limitations, we developed a bioinspired Si@C composite anode through polydopamine-mediated self-assembly of aromatic polyamide nanofibers and nano–Si, followed by controlled pyrolysis at 1000 °C under N₂. The resulting hierarchical architecture mimics the symbiotic root-nodule structure of legumes, featuring vascular bundle-like carbon frameworks and chemically bonded Si/C interfaces. The optimized composite delivers an initial capacity of 1107.0 mAh g⁻¹ at 0.1 A g⁻¹ and retains 580.0 mAh g⁻¹ after 100 cycles with 52.4% retention. The exceptional electrochemical properties arise from the optimized architecture and surface interactions. The nature-inspired carbon network minimizes ionic transport resistance via vertically aligned porous pathways while simultaneously boosting lithium–ion adsorption capacity. Furthermore, radially aligned graphitic ribbons are generated through controlled polyamide thermal transformation that effectively mitigates electrode swelling and maintains stable interfacial layers during cycling. Full article

The network architecture has demonstrated considerable potential for enhancing the strength–ductility synergy in metal matrix composites (MMCs). Intuitively, the intersections of network layers are expected to induce a stress concentration, leading to premature brittle fractures. Introducing chamfers to round the network cells may mitigate the local stress concentration and thereby improve elongation. Here, a numerical simulation framework was developed to investigate the effect of chamfering on the mechanical behavior of a three-dimensional (3D) continuous SiC_3D/Al composite with a network architecture. A Voronoi tessellation algorithm was employed to generate the continuous network structural SiC phase. By inducing ductile and brittle damage criterions in the matrix and reinforcement elements, respectively, the mechanical behavior can be predicted via the finite element method (FEM). The predicted mechanical properties reveal an unexpected trend: chamfering results in a simultaneous reduction in both strength (from 367 MPa to 312 MPa) and elongation (from 4.1% to 2.0%). With chamfering, the enlarged intersection of the network layer bears a lower load, whereas the narrower network plates exhibit higher stress concentrations. As a result, the overall load-bearing capacity of the SiC_3D reinforcement decreases monotonically with an increasing chamfer size f. Furthermore, the non-uniform stress distribution promotes the premature fracture of the SiC_3D, which reduces elongation. Additionally, the crack deflection behavior is suppressed in the chamfered models, leading to decreasing energy dissipation. This unanticipated outcome highlights an important architectural design principle: maintaining uniform geometric dimensions is critical for achieving optimal composite performance. Full article

Hybrid bonding technology has emerged as a critical 3D integration solution for advanced semiconductor packaging, enabling simultaneous bonding of metal interconnects and dielectric materials. However, conventional hybrid bonding processes face significant contamination challenges during O₂ plasma treatment required for OH group formation on SiCN or the other dielectric material surfaces. The aggressive plasma conditions cause Cu sputtering and metal migration, leading to chamber and substrate contamination that accumulates over time and degrades process reliability. In this work, we present a novel approach to address these contamination issues by implementing a molybdenum disulfide (MoS₂) barrier layer formed through plasma-enhanced chemical vapor deposition (PECVD) sulfurization of Mo films. The ultrathin MoS₂ layer acts as an effective barrier preventing Cu sputtering during O₂ plasma processing, thereby eliminating chamber contamination, and it also enables post-bonding electrical connectivity through controlled Cu filament formation via memristive switching mechanisms. When voltage is applied to the Cu-MoS₂-Cu structure after hybrid bonding, Cu ions migrate through the MoS₂ layer to form conductive filaments, establishing reliable electrical connections without compromising the bonding interface integrity. This innovative approach successfully resolves the fundamental contamination problem in hybrid bonding while maintaining excellent electrical performance, offering a pathway toward contamination-free and high-yield hybrid bonding processes for next-generation 3D-integrated devices. Full article

This study provides a comprehensive investigation into the growth behavior of boron nitride (BN) buffer layers on Silicon carbide (SiC) substrates and their influence on interfacial band alignment. BN layers were deposited on semi-insulating SiC by RF magnetron sputtering with deposition times of 2.5, 5, and 7.5 min (these deposition times are specific experimental parameters to adjust the thickness of the amorphous BN layer, not intrinsic material properties of BN). Atomic force microscopy revealed that the surface roughness of the BN layers initially decreased and then increased with thickness, indicating an evolution from nucleation to continuous film formation, followed by surface coarsening. Transmission electron microscopy confirmed the BN thicknesses of approximately 3.25, 4.91, and 7.57 nm, showing that the layers gradually became uniform and compact, thereby improving the structural integrity of the BN/SiC interface. Band alignment was analyzed using the Kraut method, yielding a valence band offset of ~0.36 eV and a conduction band offset of ~2.34 eV for the BN/SiC heterojunction. This alignment indicates that the BN buffer layer introduces a pronounced electron barrier, effectively suppressing leakage, while the relatively small VBO facilitates hole transport across the interface. These findings demonstrate that the BN buffer layer enhances interfacial bonding, reduces defect states, and enables band structure engineering, offering a promising strategy for improving the performance of wide-bandgap semiconductor devices. Full article

Silicon carbide (SiC) is widely used in high-power, high-frequency, and high-temperature electronic devices due to its excellent physical and chemical properties. However, its high hardness and chemical inertness make it difficult to achieve efficient and damage-free ultra-smooth surface processing with traditional polishing methods. This paper proposes a novel ultrasonic-assistance microarc plasma polishing (UMPP) method for high-quality and high-efficiency polishing of 4H-SiC. This study introduces a novel Ultrasonic-assisted Microarc Plasma Polishing (UMPP) method for achieving high-efficiency, high-quality surface finishing of 4H-SiC. The technique innovatively combines ultrasonic vibration with microarc plasma oxidation in a neutral NaCl electrolyte to overcome the limitations of conventional polishing methods. The UMPP process first generates a soft, porous oxide layer (primarily SiO₂) on the SiC surface through plasma discharge, which is then gently removed using soft CeO₂ abrasives. The key finding is that ultrasonic assistance synergistically enhances the oxidation process, leading to a thicker and more porous oxide layer that is more easily removed. Experimental results demonstrate that UMPP achieves a remarkably high material removal rate (MRR) of 21.7 μm/h while simultaneously delivering an ultra-smooth surface with a roughness (Ra) of 0.54 nm. Compared to the process without ultrasonic assistance, UMPP provides a 21.9% increase in MRR and a 28% reduction in Ra. This work establishes UMPP as a highly promising and efficient polishing strategy for hard and inert materials like SiC, offering a superior combination of speed and surface quality that is difficult to achieve with existing techniques. Full article

Due to their visible photoluminescence (PL) at room temperature, porous silicon particles (PSps) have gained interest for their potential biomedical applications, making them promising biological markers for in vivo or in vitro use. This study explores the PL evolution and stabilization of PSps following a two-step oxidation process involving air annealing and chemical oxidation in deionized water. PS layers were fabricated by electrochemical etching of p⁺-Si wafers and then annealed in air at 300 °C and 600 °C for five minutes. The layers were then stored in deionized water and sonicated to produce PSps. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) were used to analyze the morphology and composition of the particles, and spectrofluorimetry was used to monitor the PL over several weeks. Samples annealed at 300 °C exhibited a transition from nearly complete PL quenching to strong yellow–red emission. In contrast, the 600 °C sample showed no PL emission. The cytotoxicity of the PSps was evaluated using an MTT assay on human endothelial cells (EA.Hy926) with PSps and polyethylene glycol (PEG)-coated PSps at concentrations of (3.5–125 µg/mL) in both serum-free and fetal bovine serum (FBS)-containing media over 24, 48, and 72 h. Cell viability was significantly affected by both exposure time and particle concentration; however, this effect was prevented under conditions mimicking the physiological plasma environment. Full article

The current study examines the influence of tool rotational speed (TRS) and reinforcement volume fraction (%vol.) of SiC on particle distribution in the stir zone (SZ) of AZ91 Mg alloy. Two parameter sets were analyzed: S1 (500 rpm TRS, 13% vol.) and S2 (1500 rpm TRS, 10% vol.), with a constant tool traverse speed (TTS) of 60 mm/min. SPH simulations revealed that in S1, lower TRS resulted in limited SiC displacement, leading to significant agglomeration zones, particularly along the advancing side (AS) and beneath the tool pin. Cross-sectional observations at 15 mm and 20 mm from the plunging phase indicated the formation of reinforcement clusters along the tool path, with inadequate SiC transference to the retreating side (RS). The reduced stirring force in S1 caused poor reinforcement dispersion, with most SiC nodes settling at the SZ bottom due to insufficient upward movement. In contrast, S2 demonstrated enhanced particle mobility due to higher TRS, improving reinforcement homogeneity. Intense stirring facilitated lateral and upward SiC movement, forming an interconnected reinforcement network. SPH nodes exhibited improved dispersion, with particles across the SZ and more evenly deposited on the RS. A comparative assessment of experimental and simulated reinforcement distributions confirmed a strong correlation. Results highlight the pivotal role of TRS in reinforcement movement and agglomeration control. Higher TRS enhances stirring and promotes uniform SiC dispersion, whereas an excessive reinforcement fraction increases matrix viscosity and restricts particle mobility. Thus, optimizing TRS and reinforcement content through numerical analysis using SPH is essential for producing a homogeneous, well-reinforced composite layer with improved surface properties. The findings of this study have significant practical applications, particularly in industrial material selection, improving manufacturing processes, and developing more efficient surface composites, thereby enhancing the overall performance and reliability of Mg alloys in engineering applications. Full article

The phase transformation of fayalite from copper slag during oxidation roasting was systematically studied in this work with an analysis using X-ray diffraction, X-ray photoelectron spectroscopy, vibrating sample magnetometer, scanning electronic microscope, and energy dispersive spectrometer. The results show that the oxidation of fayalite occurs at ≥300 °C. Fayalite is first oxidized into amorphous Fe₃O₄ and SiO₂ during oxidation roasting. The former then converts into Fe₂O₃ while the latter converts into cristobalite solid solution with increasing temperature. Meanwhile, the specific saturation magnetization of roasted products increases from 9.43 emu/g at 300 °C to 20.66 emu/g at 700 °C, and then decreases to 7.31 emu/g at 1100 °C. The migration of iron in fayalite is prior to that of silicon during oxidation roasting. Therefore, the thickness of the iron oxide layer on the particle surface steadily increases with roasting temperature, from about 1.0 μm at 800 °C to about 5.0 μm at 1100 °C. This study has guiding significance for the iron grain growth in copper slag during the oxidation-reduction roasting process. Full article

Friction stir additive manufacturing (FSAM) is a promising solid-state technique for fabricating high-strength aluminum alloys, such as Al-7075, which are difficult to process using conventional melting-based additive manufacturing (AM) methods. This study investigates the mechanical properties and tool wear behavior of seven-layered Al-7075 multi-layered composites reinforced with silicon carbide (SiC) and titanium carbide (TiC) fabricated via FSAM. Microstructural analysis confirmed defect-free multi-layered composites with a homogeneous distribution of SiC and TiC reinforcements in the nugget zone (NZ), although particle agglomeration was observed at the bottom of the pin-driven zone (PDZ). The TiC-reinforced composite exhibited finer grains than the SiC-reinforced composite in both as-welded and post-weld heat-treated (PWHT) conditions, achieving a minimum grain size of 1.25 µm, corresponding to a 95% reduction compared to the base metal. The TiC-reinforced multi-layered composite demonstrated superior mechanical properties, attaining a microhardness of 93.7 HV and a UTS of 263.02 MPa in the as-welded condition, compared to 88.6 HV and 236.34 MPa for the SiC-reinforced composite. After PWHT, the TiC-reinforced composite further improved to 159.12 HV and 313.46 MPa UTS, along with a higher elongation of 11.14% compared to 7.5% for the SiC-reinforced composite. Tool wear analysis revealed that SiC reinforcement led to greater tool degradation, resulting in a 1.17% weight loss. These findings highlight the advantages of TiC reinforcement in FSAM, offering enhanced mechanical performance with reduced tool wear in multi-layered Al-7075 composites. Full article