Search Results (3,077)

The integration of microstructured current collectors offers a potential pathway to enhance interface properties in solid-state battery architectures. In this work, we investigate the influence of surface morphology on the electrochemical performance of Zn/Na_2.99Ba_0.005OCl/Cu electrodeless pouch cells by fabricating copper thin films on microstructured parylene-C substrates using a combination of colloidal lithography and reactive ion etching. O₂ plasma etching times ranging from 0 to 15 min were used to tune the surface topography, resulting in a systematic increase in root-mean-square roughness and a surface area enhancement of up to ~30% for the longest etching duration, measured via AFM. Kelvin probe force microscopy-analyzed surface potential showed maximum differences of 270 mV between non-etched and 12-minute-etched Cu collectors. The results revealed that the chemical potential is the property that relates the surface of the Cu current collector/electrode with the cell’s ionic transport performance, including the bulk ionic conductivity, while four-point sheet resistance measurements confirmed that the copper layers’ resistivity maintained values close to those of bulk copper (1.96–4.5 µΩ.cm), which are in agreement with electronic mobilities (−6 and −18 cm²V⁻¹s⁻¹). Conversely, the charge carrier concentrations (−1.6 to −2.6 × 10²³ cm⁻³) are indirectly correlated with the performance of the cell, with the samples with lower CCC_bulk (fewer free electrons) performing better and showing higher maximum discharge currents, interfacial capacitance, and first-cycle discharge plateau voltage and capacity. The data were further consolidated with Scanning Electron Microscopy and X-Ray Photoelectron Spectroscopy analyses. These results highlight that the correlation between the surface morphology and the cell is not straightforward, with the microstructured current collectors’ surface chemical potential and the charge carriers’ concentration being determinant in the performance of all-solid-state electrodeless sodium battery systems. Full article

Residual stress in optical thin films severely degrades optoelectronic device performance. Traditional designs, relying on extensive experiments, limit precise stress regulation. This study proposes a Stoney’s formula-based stress design method for multilayer thin films, constructing a mathematical model to characterize their total stress. Innovatively, it integrates single-layer stress and spectral performance for dual-objective optimization (stress elimination and spectral indicators), significantly reducing deposition workload. Experiments show small stress-prediction deviations in the 1.064 μm laser and 3.7–4.8 μm mid-infrared bands. A 16-layer broadband antireflection film (400–900 nm) with Ti₂O₃, HfO₂, and SiO₂ also shows effectively reduced stress. This model offers a novel, reliable scheme for precise residual stress regulation in multilayer thin films. Full article

Cerium-doped zinc cobaltite spinel thin films, $\mathrm{Z}\mathrm{n}{\mathrm{C}\mathrm{e}}_{\mathrm{x}}{\mathrm{C}\mathrm{o}}_{2-\mathrm{x}}{\mathrm{O}}_4 (0.00\le \mathrm{x}\le 0.05)$, were synthesized via spray pyrolysis, and their structural, morphological, optical, and electrical properties were analyzed. X-ray diffraction (XRD) confirmed a cubic spinel structure with a predominant (311) orientation across all compositions. Raman spectroscopy further verified this phase, revealing four active vibrational modes at 180 cm⁻¹, 470 cm⁻¹, 515 cm⁻¹, and 682 cm⁻¹. Scanning electron microscopy (SEM) indicated a uniform grain distribution, while energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of Ce, Zn, Co, and O. Optical measurements revealed two distinct bandgaps, decreasing from 2.32 eV to 2.20 eV for the lower-energy transition and from 3.38 eV to 3.18 eV for the higher-energy transition. Hall effect measurements confirmed p-type conductivity in all films. Electrical analysis showed a reduction in resistivity, from 280.3 Ω·cm to 15.4 Ω·cm, along with an increase in carrier concentration from 1.15 × 10¹⁶ cm⁻³ to 8.15 × 10¹⁷ cm⁻³ with higher Ce content. These results demonstrate that spray pyrolysis is a cost-effective and scalable method for producing Ce-doped ZnCo₂O₄ thin films with tunable properties, making them suitable for electronic and optoelectronic applications. Full article

This study addresses the need for efficient photoelectric materials by fabricating Indium-doped tin sulfide (SnS-In)/titanium dioxide (TiO₂) heterostructure thin films via radio frequency (RF) magnetron sputtering. We systematically investigated the synergistic enhancement of photoelectric properties from both In-doping and the heterostructure design. SnS-In films with controlled In concentrations were prepared by embedding varying numbers of indium pellets into the SnS sputtering target. Our findings reveal that an optimal In doping of 4.93 at% significantly improves the crystalline quality and light absorption of SnS, reducing its band gap from 1.27 eV to 1.13 eV and enhancing carrier concentration and mobility. Subsequently, the optimized SnS-In film combined with TiO₂ formed a heterojunction, achieving a peak photocurrent density of 6.36 µA/cm² under visible light. This is 2.2 and 53.0 times higher than standalone SnS-In and TiO₂ films, respectively. This superior performance is attributed to the optimal In³⁺ doping effectively modulating the SnS band structure and the type-II heterojunction promoting efficient charge separation. This work demonstrates a promising strategy for optoelectronic conversion and photocatalysis by combining In-doping for SnS band structure engineering with TiO₂ heterostructure construction. Full article

In this study, tin oxide (SnO₂) resistive random-access memory (RRAM) thin films were fabricated using the thermal evaporation and radiofrequency and dc frequency sputtering techniques for metal–insulator–metal (MIM) structures. The fabrication process began with the deposition of a silicon dioxide (SiO₂) layer onto a silicon (Si) substrate, followed by the deposition of a titanium nitride (TiN) layer to serve as the bottom electrode. Subsequently, the tin oxide (SnO₂) layer was deposited as the resistive switching insulator. Two types of top electrodes were developed to investigate the influence of different oxygen concentrations on the bipolar switching, electrical characteristics, and performance of memory devices. An aluminum (Al) top electrode was deposited using thermal evaporation, while a platinum (Pt) top electrode was deposited via dc sputtering. As a result, two distinct metal–insulator–metal (MIM) memory RRAM device structures were formed, i.e., Al/SnO₂/TiN/SiO₂/Si and Pt/SnO₂/TiN/SiO₂/Si. In addition, the symmetry bipolar switching characteristics, electrical conduction mechanism, and oxygen concentration factor of the tin oxide-based memory devices using rapid thermal annealing and different top electrodes were determined and investigated by ohmic, space-charge-limit-current, Schottky, and Poole–Frenkel conduction equations in this study. Full article

Nosocomial infections caused by Candida albicans pose serious challenges to healthcare systems due to their persistence on medical surfaces and resistance to conventional disinfectants. This study evaluates antifungal properties of SnO₂ doped with silver and cuprite nanoparticles and WO₃ thin films, as well as cobalt (CoFe₂O₄) and cobalt–nickel (Co_0.5Ni₀.₅Fe₂O₄) ferrite nanoparticles, activated by ultraviolet C (UVC) radiation, direct electric current (up to 100 V), and magnetic fields. SnO₂ films were synthesized by Spray Pyrolysis and WO₃ by Sputtering deposition, Ferrites nanoparticles by sol–gel, while metallic nanoparticles were synthetized via chemical reduction. Characterization consisted mainly of SEM, TEM, and XRD, and their antimicrobial activity was tested against C. albicans. WO₃ films achieved 86.2% fungal inhibition after 5 min of UVC exposure. SnO₂ films doped with nanoparticles reached 100% inhibition when combined with UVC and 100 V. Ferrite nanoparticles alone showed moderate activity (21.9%–40.4%) but exhibited strong surface adhesion to fungal cells, indicating potential for magnetically guided antifungal therapies. These results demonstrate the feasibility of using multifunctional nanomaterials for rapid, non-chemical disinfection. The materials are low-cost, scalable, and adaptable to hospital settings, making them promising candidates for reducing healthcare-associated fungal infections through advanced surface sterilization technologies. Full article

A method was developed for plasma-enhanced chemical vapor deposition of β-Ga₂O₃:Zn thin films with the possibility of pre-purifying precursors. The structural and electrically conductive properties of β-Ga₂O₃:Zn thin films were studied. Increasing the temperature of the Zn source (T_Zn) to 220 °C led to the formation of Ga₂O₃ films with a Zn concentration of 4 at.%, at T_Zn = 230 °C [Zn] = 6 at.% and at 235 °C. [Zn] = 8 at.% At T_Zn = 23 °C, the films corresponded to the β-Ga₂O₃ phase and were single-crystalline with a surface orientation of (–201). As T_Zn increased, the polycrystalline structure of β-Ga₂O₃ films with a predominant orientation of (111) was formed. The introduction of Zn led to the formation of a more developed microrelief of the surface. Raman spectroscopy showed that a small concentration of impurity atoms tended to replace gallium atoms in the oxide lattice, which was also confirmed by the Hall measurements. The concentration of charge carriers upon the introduction of Zn, which is a deep acceptor, decreased by 2–3 orders of magnitude, which mainly determined the decrease in the films’ resistivity. The resulting thin films were promising for the development of high-resistivity areas of β-Ga₂O₃-based devices. Full article

The blocking layer is crucial for inhibiting recombination processes in photovoltaics that utilize oxide semiconductors, such as dye-sensitized solar cells (DSSCs), quantum-dot-sensitized solar cells (QDSSCs), and perovskite solar cells. However, its effectiveness strongly depends on the chosen deposition method. This study systematically evaluates the most suitable approach for obtaining a uniform, pinhole-free titanium dioxide (TiO₂) blocking layer by using three deposition methods: radio-frequency sputtering, spin-coating, and chemical bath deposition. The electrochemical, optical, and morphological properties of blocking layers were characterized using cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), UV-VIS spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). KPFM analysis, together with CV and EIS, revealed that the lower R_ct values and higher CV currents observed in spin-coated (SC_11-33) and vertically deposited CBD films (CB_5, CB_6) resulted from incomplete FTO coverage. In contrast, sputtered (SP_21-24) and horizontally deposited CBD films (CB_1, CB_2) demonstrated significantly higher R_ct values and improved surface coverage. Full DSSCs fabricated with SP_23, SC_33, and CB_2 confirmed the correlation between interfacial properties and photovoltaic performance. This combined approach offers a fast, material-efficient, and environmentally conscious screening method for optimizing blocking layers in solar cell technologies. Full article

Understanding the resistive switching (RS) mechanisms in memristive devices is crucial for developing non-volatile memory technologies. Here, we investigate the memristor effect in hydrothermally grown Au-nanoseeded CuO films. Based on I-V measurements, conductive-AFM, S/TEM, and EDS analyses, we examine the changes within the switching layer associated with RS. Our results reveal a filamentary mechanism of RS. Notably, EDS mapping shows directional Au redistribution between the bottom nanoseeds and the top electrode, while Cu and O remain uniformly distributed. These findings support an electrochemical metallization (ECM)-like filamentary mechanism driven by Au species migration. The use of Au-nanoseeds, required by the solution-based growth method, critically affects filament formation and RS behavior. Our results emphasize the importance of microstructure and electrode–oxide interfaces in determining the switching mechanism in oxide-based memristors. Full article

Carbon dioxide capture, utilization, and storage for enhanced oil recovery (CCUS-EOR) represents an effective strategy for reducing CO₂ emissions while improving oil recovery efficiency. However, harsh environmental conditions during the process can induce a supercritical state in captured CO₂, which may undermine the structural integrity of tubular components through corrosion. This study systematically investigated the corrosion behaviors of two tubing steels (P110 and Super 13Cr) in 20 MPa supercritical CO₂ containing trace H₂S/O₂ impurities at 60–120 °C using weight loss tests and surface analysis. The results demonstrate that in water-unsaturated supercritical CO₂ with ≤500 ppmv H₂S, both steels exhibited low general corrosion rates (P110: 0.03 mm/y; S13Cr: 0.01 mm/y), with incomplete surface films partially covering grinding traces. However, S13Cr suffered pitting corrosion at >500 ppmv H₂S. Oxygen introduction triggered severe general/localized corrosion characterized by cracked, non-protective surface films. Reducing O₂ to 500 ppm yielded thin, continuous protective films, eliminating pitting. Temperature critically influenced S13Cr corrosion: decreasing from 120 °C to 60 °C increased the corrosion rates from 0.0031 mm/y to 0.08 mm/y due to enhanced water precipitation and impurity gas dissolution. These findings establish impurity thresholds to ensure acceptable corrosion performance. Full article

In this work, a sol–gel spin coating method was applied to obtain ZnO and ZnO:Ga thin films on a glass and ITO-coated glass substrate. Their structural, optical, and electrical properties were investigated with respect to their dependence on the different substrates, the number of layers (two and four), and the annealing temperature (300 and 400 °C). X-ray diffraction (XRD) patterns showed a hexagonal structure corresponding to the wurtzite phase for ZnO and ZnO:Ga films. ZnO films, deposited on a glass substrate, reveal greater crystallite sizes compared with ZnO films obtained from an ITO substrate. A Ga dopant worsened film crystallization. X-Ray photoelectron spectroscopy (XPS) proves the presence of Ga in a ZnO structure. ZnO films show lower transparency and haze values up to 44.12 (glass substrate) and 33.73 (ITO substrate) at a wavelength of 550 nm. The significant enhancement of ZnO film transparency is observed with Ga doping (with average transmittance in the visible spectral range above 85%, independent of the substrate used). Sheet resistance values are lower for ZnO:Ga films, and the figure of merit values are better compared with those of undoped ZnO films. Work function is studied for ZnO and ZnO:Ga films, deposited on Si, ITO, and glass substrates. Full article

The main goal of this study was to investigate the properties of ZnO thin films, including pure films and those doped with indium (up to 8 mol%) that was deposited using a spray pyrolysis technique on glass and silicon substrates in order to prepare the position-sensitive structure, Si-SiO₂-ZnO:In. To this aim, the present work is focused on investigating the effect of indium concentration on the morphology, structure, and optical properties of the films. X-ray diffraction (XRD) analysis reveals a wurtzite polycrystalline structure. Scanning electron microscopy (SEM) images display a smooth and uniform surface characterized by closely packed nanocrystalline clusters. As the indium concentration rises to 8 mol%, the number of nuclei grows, resulting in uniformly distributed grains across the entire substrate surface. The estimated root mean square (RMS) roughness values for the thin films undoped and doped with 3 mol%, 5 mol%, and 8 mol% of ZnO measured using AFM are 6.13, 9.64, and 13.76 nm, respectively. The increase in indium concentration leads to a slight decrease in film transmittance. The measured LPV photosensitivity of about 44 mV/mm confirms the potential use of these thin films in practical applications. Full article

Photocatalytic composite materials (TiO₂/SiO₂/BFSF) were first fabricated using the sol–gel method of loading SiO₂ and TiO₂ on blast furnace slag fibers (BFSFs) in sequence and using them as a new carrier. Then, TG-DTA, XRD, BET, SEM-EDS, and UV-Vis absorption spectra, as well as spectrophotometric measurements, were employed to analyze the physicochemical properties of TiO₂. The influence of SiO₂ coating, the number of impregnations in TiO₂ sol, the calcination temperature, and the number of repeated usages on the activity of TiO₂/SiO₂/BFSF was researched by analyzing the degradation of methylene blue (MB) aqueous solution. The results show that SiO₂ could increase the load of TiO₂, impede the growth of TiO₂ grains, and inhibit the recombination of electron–hole pairs, ultimately enhancing the photocatalytic activity of samples. The activity of TiO₂/SiO₂/BFSF first quickly increased and then slowly decreased with an increase in the loading times of TiO₂ sol and calcination temperature. After three impregnations in TiO₂ sol and calcining at 450 °C for 2.5 h, a uniform and compact anatase TiO₂ thin film was deposited on the surface of TiO₂/SiO₂/BFSF, showing the strongest activity. When this sample was used to degrade MB aqueous solution for 180 min under ultraviolet light irradiation, the degradation proportion reached a maximum of 96%. After four reuses, the degradation ratio could still reach 67%. In addition, three potential photocatalytic mechanisms were proposed. Finally, the high-value-added application of blast furnace slag for preparing photocatalytic composite materials was achieved, successfully turning solid waste into “treasure”. Full article

This study examines the effect of oxygen concentration and sputtering power on the surface morphology of TiO₂ thin films deposited by DC reactive magnetron sputtering. Surface roughness parameters were obtained using MountainsMap^® software(10.2) from SEM images, while fractal dimensions and texture descriptors were extracted via Python-based image processing. Fractal dimension was calculated using the box-counting method applied to binarized images with multiple threshold levels, and texture analysis employed Gray-Level Co-occurrence Matrix (GLCM) statistics to capture local anisotropies and spatial heterogeneity. Four samples were analyzed, previously prepared with oxygen concentrations of 50% and 75%, and sputtering powers of 500 W and 1000 W. The results have shown that films deposited at higher oxygen levels and sputtering powers exhibited increased roughness, higher fractal dimensions, and stronger GLCM contrast, indicating more complex and heterogeneous surface structures. Conversely, films produced at lower oxygen and power settings showed smoother, more isotropic surfaces with lower complexity. This integrated analysis framework links deposition parameters with morphological characteristics, enhancing the understanding of surface evolution and enabling better control of TiO₂ thin film properties. Full article

Nanofiltration (NF) is considered a competitive purification method for acidic stream treatments. However, conventional thin-film composite NF membranes degrade under acid exposures, limiting their applications in industrial acid treatment. For example, wet-process phosphoric acid contains impurities of multivalent metal ions, but NF membrane technologies for impurity removal under harsh conditions are still immature. In this work, we develop a novel strategy of acid-resistant nanofiltration membranes based on interfacial polymerization (IP) of polyethyleneimine (PEI) and cyanuric chloride (CC) with the s-triazine ring. The IP process was optimized by orthogonal experiments to obtain positively charged PEI-CC membranes with a molecular weight cut-off (MWCO) of 337 Da. We further applied it to the approximate industrial phosphoric acid purification condition. In the tests using a mixed solution containing 20 wt% P₂O₅, 2 g/L Fe³⁺, 2 g/L Al³⁺, and 2 g/L Mg²⁺ at 0.7 MPa and 25 °C, the NF membrane achieved 56% rejection of Fe, Al, and Mg and over 97% permeation of phosphorus. In addition, the PEI-CC membrane exhibited excellent acid resistance in the 48 h dynamic acid permeation experiment. The simple fabrication procedure of PEI-CC membrane has excellent acid resistance and great potential for industrial applications. Full article