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Article

268 Views

15 Pages

Radiation-Hardened 20T SRAM with Read and Write Optimization for Space Applications

Kon-Woo Kim,
Eun Gyo Jeong and
Sung-Hun Jo

Appl. Sci.2025, 15(21), 11374;https://doi.org/10.3390/app152111374

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23 October 2025

With continued CMOS scaling, transistor miniaturization has significantly raised SRAM integration density while lowering the critical charge (Qc), increasing cell vulnerability to spaceborne high-energy particles. Single-event upset (SEU) and especia...

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Article

462 Views

14 Pages

Optimization of 6T-SRAM Cell Based on CNN-Informed NSGA-II with Consideration of Parasitic Resistance

Qiwen Zheng,
Ye Wu,
Chun Zhao and
Jiafeng Zhou

Electronics2025, 14(20), 4002;https://doi.org/10.3390/electronics14204002

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13 October 2025

Optimizing static random-access memory (SRAM) cells requires considering parasitic effects, as their impact on circuits in advanced nodes becomes increasingly complex. In this paper, Convolutional Neural Network-Informed Non-dominated Sorting Genetic...

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