Special Issue "Advanced Semiconductor Materials for Energy, Electronics and Sensors"

A special issue of Sustainability (ISSN 2071-1050). This special issue belongs to the section "Sustainable Materials".

Deadline for manuscript submissions: 30 November 2021.

Special Issue Editors

Prof. Dr. Qitao Zhou
E-Mail Website
Guest Editor
Engineering Research Center of Nano-Geomaterials of the Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
Interests: microfluidic sensors; triboelectric nanogenerators; self-powered system
Prof. Dr. Liang Li
E-Mail Website
Guest Editor
Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
Interests: optical properties of 2D materials; 2D materials for optoelectronic (especially in-plane anisotropic 2D materials for polarization-sensitive photodetection and mid-infrared photodetectors
Dr. Wei Han
E-Mail Website
Guest Editor
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
Interests: CVD growth of 2D materials for electronic devices

Special Issue Information

Dear Colleagues,

We are pleased to invite submissionts to a Special Issue of  the  open  access  journal  Sustainability  in  the  area  of advanced semiconductor materials. With the development of the Internet of Things and electronic products, the number of sensors is growing explosively. At the same time, solving the energy problem caused by the growth of the number of these sensors has become one of the keys to sustainable development. In recent years, the development of advanced semiconductor materials is expected to solve related problems. For example, the development of two-dimensional (2D) semiconductor materials promotes the development of high-performance devices with low power consumption. On the other hand, since the semiconductor ZnO nanowires-based piezoelectric nanogenerator was proposed in 2006, the piezoelectric energy harvesting technologies have attracted remarkable attention due to their ability to directly convert small-scale mechanical vibrations into electricity. Then the development of the triboelectric nanogenerator and self-powered system is expected to become an effective means to solve the problem of power supplies in the Internet of Things. At the same time, semiconductor materials are also widely used in the field of new energy, such as photocatalysis, fuel cells and other fields.

This Special Issue is focused on semiconductor materials for energy, electronics and sensors. Topics of interest for publication include, but are not limited to:

  • Preparation of semiconductor materials and device construction
  • Two-dimensional semiconductor materials
  • Triboelectric nanogenerators
  • Piezoelectric nanogenerators
  • Self-powered system
  • Solar cells and thermoelectric devices, etc.
  • Energy storage
  • Photocatalytic activity

Prof. Dr. Qitao Zhou
Prof. Dr. Liang Li
Dr. Wei Han
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sustainability is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D materials
  • transistors
  • photodetectors
  • triboelectric nanogenerators
  • piezoelectric nanogenerators
  • photocatalysis
  • self-powered system
  • energy conversion

Published Papers (2 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

Article
Low-Powered Photodetector Based on Two-Dimensional InS0.3Se0.7/WS2 Heterostructure
Sustainability 2021, 13(12), 6883; https://doi.org/10.3390/su13126883 - 18 Jun 2021
Viewed by 280
Abstract
Photodetectors based on two-dimensional (2D) materials have great potential applications in the field of new energy, such as fuel cells, solar cells, and other fields. Van der Waals (vdW) heterojunction photodiodes are expected to be one of the promising applications of two-dimensional materials [...] Read more.
Photodetectors based on two-dimensional (2D) materials have great potential applications in the field of new energy, such as fuel cells, solar cells, and other fields. Van der Waals (vdW) heterojunction photodiodes are expected to be one of the promising applications of two-dimensional materials due to the photoelectric properties without consideration of lattice mismatch. High-efficiency photoelectric sensors based on two-dimensional materials have great significance to reducing the energy consumption of devices. Here, we build a complex vdW heterostructure by combining InS0.3Se0.7 with another suitable 2D material WS2. Few-layer graphite was used as electrodes to enhance the optoelectronic performance of indium monochalcogenides. Evident photocurrent is observed in the InS0.3Se0.7/WS2 vdW heterostructure device arising from the formed p–n junction at the interface. The uniformity and photoresponse of the InS0.3Se0.7/WS2 vdW heterostructure has been further investigated by the photocurrent mapping. It shows that the entire photovoltaic current was originated from the InS0.3Se0.7/WS2 vdW heterojunction by scanning photocurrent microscope images. Furthermore, the response speed is enhanced at small bias voltage. The transient photoresponse can be well reproduced in almost 100 cycles, indicating the good repeatable optoelectronic performance. Our study indicates that the as-prepared InS0.3Se0.7/WS2 vdW heterostructures are attractive building blocks for photodetectors application. Our findings will open up a new way to further develop high-performance, low-power, and energy-efficient photodetectors based on indium monochalcogenides. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials for Energy, Electronics and Sensors)
Show Figures

Figure 1

Article
In-Plane Anisotropic Thermal Conductivity of Low-Symmetry PdSe2
Sustainability 2021, 13(8), 4155; https://doi.org/10.3390/su13084155 - 08 Apr 2021
Cited by 1 | Viewed by 610
Abstract
Low-symmetry two-dimensional (2D) materials have exhibited novel anisotropic properties in optics, electronics, and mechanics. Such characteristics have opened up new avenues for fundamental research on nano-electronic devices. In-plane thermal conductivity plays a pivotal role in the electronic performance of devices. This article reports [...] Read more.
Low-symmetry two-dimensional (2D) materials have exhibited novel anisotropic properties in optics, electronics, and mechanics. Such characteristics have opened up new avenues for fundamental research on nano-electronic devices. In-plane thermal conductivity plays a pivotal role in the electronic performance of devices. This article reports a systematic study of the in-plane anisotropic thermal conductivity of PdSe2 with a pentagonal, low-symmetry structure. An in-plane anisotropic ratio up to 1.42 was observed by the micro-Raman thermometry method. In the Raman scattering spectrum, we extracted a frequency shift from the Ag3 mode with the most sensitivity to temperature. The anisotropic thermal conductivity was deduced by analyzing the heat diffusion equations of suspended PdSe2 films. With the increase in thickness, the anisotropy ratio decreased gradually because the thermal conductivity in the x-direction increased faster than in the y-direction. The anisotropic thermal conductivity provides thermal management strategies for the next generation of nano-electronic devices based on PdSe2. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials for Energy, Electronics and Sensors)
Show Figures

Figure 1

Back to TopTop