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Special Issue "Potentiometric Bio/Chemical Sensing"

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Chemical Sensors".

Deadline for manuscript submissions: 15 June 2019

Special Issue Editor

Guest Editor
Prof. Toshiya Sakata

Department of Materials Engineering, University of Tokyo, Tokyo, Japan
Website | E-Mail
Interests: semiconductor device; biosensing; bioelectronics; biochip

Special Issue Information

Dear Colleagues,

Recently, field-effect transistor (FET) biosensors have attracted global attention in the field of biosensor technology. An ion-sensitive FET (ISFET) has been commonly used as the basic structure of ion sensors and potentiometric biosensors, with various semiconducting materials being used as the channel, including both inorganic and organic materials (i.e., Si, GaAs, nanotube, and 2D materials). A platform based on the FET biosensors is suitable for a simple, miniaturized, and cost-effective system in the field of clinical diagnostics and pharmaceutical discovery.

The aim of this Special Issue is to provide the latest developments in the potentiometric bio/chemical sensor devices, such as FET biosensors, for personalized medicine and healthcare applications. In particular, various materials are being used as the channel of FET for biosensing, and a solution/gate interface is functionalized for the enhancement of the biosensing performance. Therefore, we welcome scientific work in the development of novel materials for sensors and biointerfaces for potentiometric bio/chemical sensing.

Potential topics and keywords are as follows:

  • - Ion-sensitive field-effect transistor (FET)
  • - Ion-selective electrode (ISE)
  • - Electrochemical sensor
  • - Potentiometric bio/chemical sensing
  • - Flexible and stretchable devices for bio/chemical sensing
  • - Application of nanowire, nanotube, and 2D materials for bio/chemical sensing
  • - Biointerface for electrical bio/chemical sensing
  • - Surface modification method for bio/chemical sensing
  • - Simulation of ionic behaviors at bio/electrode interface
  • - New devices for electrobiology

Prof. Toshiya Sakata
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (3 papers)

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Research

Open AccessArticle
Fast Procedures for the Electrodeposition of Platinum Nanostructures on Miniaturized Electrodes for Improved Ion Sensing
Sensors 2019, 19(10), 2260; https://doi.org/10.3390/s19102260
Received: 24 April 2019 / Revised: 13 May 2019 / Accepted: 14 May 2019 / Published: 16 May 2019
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Abstract
Nanostructured materials have attracted considerable interest over the last few decades to enhance sensing capabilities thanks to their unique properties and large surface area. In particular, noble metal nanostructures offer several advantages including high stability, non-toxicity and excellent electrochemical behaviour. However, in recent [...] Read more.
Nanostructured materials have attracted considerable interest over the last few decades to enhance sensing capabilities thanks to their unique properties and large surface area. In particular, noble metal nanostructures offer several advantages including high stability, non-toxicity and excellent electrochemical behaviour. However, in recent years the great expansion of point-of-care (POC) and wearable systems and the attempt to perform measurements in tiny spaces have also risen the need of increasing sensors miniaturization. Fast constant potential electrodeposition techniques have been proven to be an efficient way to obtain conformal platinum and gold nanostructured layers on macro-electrodes. However, this technique is not effective on micro-electrodes. In this paper, we investigate an alternative one-step deposition technique of platinum nanoflowers on micro-electrodes by linear sweep voltammetry (LSV). The effective deposition of platinum nanoflowers with similar properties to the ones deposited on macro-electrodes is confirmed by morphological analysis and by the similar roughness factor (~200) and capacitance (~18 μ F/mm 2 ). The electrochemical behaviour of the nanostructured layer is then tested in an solid-contact (SC) L i + -selective micro-electrode and compared to the case of macro-electrodes. The sensor offers Nernstian calibration with same response time (~15 s) and a one-order of magnitude smaller limit of detection (LOD) ( 2.6 × 10 6 ) with respect to the macro-ion-selective sensors (ISE). Finally, sensor reversibility and stability in both wet and dry conditions is proven. Full article
(This article belongs to the Special Issue Potentiometric Bio/Chemical Sensing)
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Graphical abstract

Open AccessArticle
Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device
Sensors 2019, 19(9), 2209; https://doi.org/10.3390/s19092209
Received: 20 February 2019 / Revised: 23 April 2019 / Accepted: 10 May 2019 / Published: 13 May 2019
PDF Full-text (2039 KB) | HTML Full-text | XML Full-text
Abstract
Mercury ion selective membrane (Hg-ISM) coated extended gate Field Effect transistors (ISM-FET) were used to manifest a novel methodology for ion-selective sensors based on FET’s, creating ultra-high sensitivity (−36 mV/log [Hg2+]) and outweighing ideal Nernst sensitivity limit (−29.58 mV/log [Hg2+ [...] Read more.
Mercury ion selective membrane (Hg-ISM) coated extended gate Field Effect transistors (ISM-FET) were used to manifest a novel methodology for ion-selective sensors based on FET’s, creating ultra-high sensitivity (−36 mV/log [Hg2+]) and outweighing ideal Nernst sensitivity limit (−29.58 mV/log [Hg2+]) for mercury ion. This highly enhanced sensitivity compared with the ion-selective electrode (ISE) (10−7 M) has reduced the limit of detection (10−13 M) of Hg2+ concentration’s magnitude to considerable orders irrespective of the pH of the test solution. Systematical investigation was carried out by modulating sensor design and bias voltage, revealing that higher sensitivity and a lower detection limit can be attained in an adequately stronger electric field. Our sensor has a limit of detection of 10−13 M which is two orders lower than Inductively Coupled Plasma Mass Spectrometry (ICP-MS), having a limit of detection of 10−11 M. The sensitivity and detection limit do not have axiomatic changes under the presence of high concentrations of interfering ions. The technology offers economic and consumer friendly water quality monitoring options intended for homes, offices and industries. Full article
(This article belongs to the Special Issue Potentiometric Bio/Chemical Sensing)
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Figure 1

Open AccessArticle
Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation
Sensors 2019, 19(8), 1784; https://doi.org/10.3390/s19081784
Received: 11 March 2019 / Revised: 11 April 2019 / Accepted: 12 April 2019 / Published: 14 April 2019
PDF Full-text (2611 KB) | HTML Full-text | XML Full-text | Supplementary Files
Abstract
We have successfully monitored the effect of progesterone and Ca2+ on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated [...] Read more.
We have successfully monitored the effect of progesterone and Ca2+ on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated by sperm respiration based on the principle of the ISFET sensor. Upon adding mouse sperm to the gate of the ISFET sensor in the culture medium with progesterone, the pH decreases with an increasing concentration of progesterone from 1 to 40 μM. This is because progesterone induces Ca2+ influx into spermatozoa and triggers multiple Ca2+-dependent physiological responses, which subsequently activates sperm respiration. Moreover, this pH response of the ISFET sensor is not observed for a Ca2+-free medium even when progesterone is introduced, which means that Ca2+ influx is necessary for sperm activation that results in sperm capacitation. Thus, a platform based on the ISFET sensor system can provide a simple method of evaluating artificially induced sperm capacitation in the field of male infertility treatment. Full article
(This article belongs to the Special Issue Potentiometric Bio/Chemical Sensing)
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Graphical abstract

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