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Sensors 2019, 19(8), 1784; https://doi.org/10.3390/s19081784

Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation

Department of Materials Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Author to whom correspondence should be addressed.
Received: 11 March 2019 / Revised: 11 April 2019 / Accepted: 12 April 2019 / Published: 14 April 2019
(This article belongs to the Special Issue Potentiometric Bio/Chemical Sensing)
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Abstract

We have successfully monitored the effect of progesterone and Ca2+ on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated by sperm respiration based on the principle of the ISFET sensor. Upon adding mouse sperm to the gate of the ISFET sensor in the culture medium with progesterone, the pH decreases with an increasing concentration of progesterone from 1 to 40 μM. This is because progesterone induces Ca2+ influx into spermatozoa and triggers multiple Ca2+-dependent physiological responses, which subsequently activates sperm respiration. Moreover, this pH response of the ISFET sensor is not observed for a Ca2+-free medium even when progesterone is introduced, which means that Ca2+ influx is necessary for sperm activation that results in sperm capacitation. Thus, a platform based on the ISFET sensor system can provide a simple method of evaluating artificially induced sperm capacitation in the field of male infertility treatment. View Full-Text
Keywords: artificially induced sperm capacitation; field-effect transistor (FET); pH; progesterone; calcium ion artificially induced sperm capacitation; field-effect transistor (FET); pH; progesterone; calcium ion
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Saito, A.; Sakata, T. Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation. Sensors 2019, 19, 1784.

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