Long-Wave Infrared Lasers and Applications

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: 15 February 2027 | Viewed by 1043

Special Issue Editors


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Guest Editor
Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, China
Interests: infrared lasers and applications; laser annealing; carbon dioxide lasers
College of Electronic Countermeasures, National University of Defense Technology, Hefei 230037, China
Interests: lasers; laser protection; electronic countermeasures
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Special Issue Information

Dear Colleagues,

Long-wave infrared (LWIR) (8–14 μm) lasers have wide applications in areas such as strong-field physics, molecular spectroscopy diagnostics, laser annealing, and coherent detection Lidars. In strong-field physics, guiding an LWIR ultra-short laser in a high-pressure gas can generate ultrahigh harmonics, allowing the generation of pulses as short as several attoseconds over regions of the X-ray spectrum. Spectroscopy in the LWIR region provides essential information about the structure of materials, offering valuable insights for physical, chemical, and biological sciences. Due to the longer wavelength, the LWIR lasers are the commercial lasers in laser annealing, used to avoid pattern effects, and they are the more suitable candidates in coherent detection Lidars as they have a larger field of view compared to the near-infrared wavelength. High peak power, narrow linewidth, and wide tunable range are critical for improving precision in molecular diagnostics and extending detection range in LWIR Lidar systems.

This Special Issue aims to publish selected contributions on long-wave infrared lasers and applications. Potential topics include, but are not limited to, the following:

  • Crystal design and fabrication;
  • Optical parametric oscillator;
  • Optical parametric amplifier;
  • Quantum cascade laser;
  • Novel long-wave infrared lasers;
  • Carbon oxide lasers;
  • Optical pumped gas lasers;
  • Optical remote sensor design and simulation;
  • Infrared photoelectricity technology;
  • Applications of LWIR lasers.

Dr. Zhiyong Li
Dr. Qing Ye
Guest Editors

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Keywords

  • long-wave infrared
  • nonlinear optical frequency conversion
  • quantum cascade laser
  • laser annealing
  • single frequency
  • wavelength stability
  • transmission
  • high peak power

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Published Papers (1 paper)

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Research

23 pages, 5737 KB  
Article
Simulations and Experiments on Activation of Doped Silicon Wafers Based on Dual Beam of 785 nm Semiconductor Laser and 10.6 μm CO2 Laser
by Ziming Wang, Sicheng Li, Mingkun Liu, Guochang Wang, Zhenzhen Xie, Liemao Hu, Hui Li, Fangjin Ning, Wenning Xu, Yishen Hou, Jie Liu, Lianqing Wang, Donglei Wang, Changjun Ke, Zhiyong Li and Rongqing Tan
Photonics 2026, 13(3), 232; https://doi.org/10.3390/photonics13030232 - 27 Feb 2026
Viewed by 602
Abstract
In this study, we analyzed the spatiotemporal distribution of annealing temperature using a dual-beam dynamic scanning annealing technique based on a CO2 laser (10.6 μm) and a 785 nm laser, and the effects of laser energy density, scanning speed, and preheating temperature [...] Read more.
In this study, we analyzed the spatiotemporal distribution of annealing temperature using a dual-beam dynamic scanning annealing technique based on a CO2 laser (10.6 μm) and a 785 nm laser, and the effects of laser energy density, scanning speed, and preheating temperature on the resulting temperature. We systematically examined the influence of key process parameters, including laser energy density, scanning speed, and preheating temperature, on the annealing temperature. Our aim was to optimize annealing conditions to enhance the electrical properties of the materials, as indicated by reduced sheet resistance, controlled diffusion depth of doped ions, and higher activation rates. This approach ensured high activation rates of doped ions while limiting dopant re-diffusion to merely 3.6 nm in the depth direction, as confirmed by concentration profile analysis. Furthermore, based on temperature distribution, deformation of the wafer surface was analyzed. The results indicate that under the employed process parameters, no significant adverse effects on wafer flatness or structural integrity were observed. Full article
(This article belongs to the Special Issue Long-Wave Infrared Lasers and Applications)
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