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Photonics
Special Issues
Advances in Avalanche Photodiodes
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Advances in Avalanche Photodiodes

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: closed (15 November 2023) | Viewed by 11517

Special Issue Editors

Dr. Yuan Yuan

E-Mail Website
Guest Editor
Hewlett Packard Labs, Hewlett Packard Enrerprise, Milpitas, CA, USA
Interests: photodiodes; optoelectronics; silicon photonics
Dr. Yiwei Peng

E-Mail Website
Guest Editor
Hewlett Packard Labs, Hewlett Packard Enrerprise, Milpitas, CA, USA
Interests: RF photonics; photodiodes; photonic integrated circuits

Special Issue Information

Dear Colleagues,

As a fundamental research area in the field of optoelectronics, light detection is an indispensable part of optical systems that bulids a bridge between light and electrical signals. Emerging demands and applications, such as imaging, sensing, quantum communication, optical interconnects, light detection and ranging (Lidar), and optical neural networks, place more stringent requirements on light detection and continuously drive the development of higher performance photodiodes. Relative to many other types of photodetectors, avalanche photodiodes provide higher sensitivity and loss margins due to their internal avalanche gain. Photon-generated carriers are accelerated by the electric field and impact ionize more electron-hole pairs, acting as an internal amplifier. Accordingly, they are ideal receivers for weak light signals or efficient optical systems. The detectable weak light is even down to a single photon, also known as single-photon avalanche diodes (SPADs). Due to the excellent sensitivity and wide range of application scenarios, avalanche photodiodes have aroused extensive research interest in device design, material science, physical mechanism, numerical simulation, photonic circuit integration, fabrication techniques, and system applications.

The objective of this Special Issue is to document the current advances in avalanche photodiodes, including the latest progress and trends in avalanche photodiodes, state-of-the-art or innovative device-level demonstrations, physical or numerical theory, integration or packaging, and system-level applications.

Dr. Yuan Yuan
Dr. Yiwei Peng
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • avalanche photodiodes
  • impact ionization
  • photonic circuit integration
  • single-photon avalanche diodes

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Published Papers (5 papers)

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Research

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15 pages, 1595 KiB  
Article
Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains
by Matija Colja, Marco Cautero, Fulvia Arfelli, Michele Bertolo, Giorgio Biasiol, Simone Dal Zilio, Francesco Driussi, Ralf Hendrik Menk, Silvio Modesti, Pierpaolo Palestri, Alessandro Pilotto and Giuseppe Cautero
Photonics 2023, 10(8), 933; https://doi.org/10.3390/photonics10080933 - 15 Aug 2023
Cited by 1 | Viewed by 1243
Abstract
In this work, we experimentally analyze the periodic oscillations that take place in staircase APDs with separate absorption and multiplication regions when operating under continuous laser light. These oscillations increase in frequency when the APD gain increases. We have verified that they are [...] Read more.
In this work, we experimentally analyze the periodic oscillations that take place in staircase APDs with separate absorption and multiplication regions when operating under continuous laser light. These oscillations increase in frequency when the APD gain increases. We have verified that they are not affected by the parameters (gain and bandwidth) of the transimpedance amplifier, and thus originate inside the APD. The phenomenon is analyzed systematically by considering devices with different thicknesses of the absorption region. Possible physical interpretations related to the flux of holes generated by impact ionization are provided. Full article
(This article belongs to the Special Issue Advances in Avalanche Photodiodes)
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11 pages, 3350 KiB  
Article
High-Performance Normal-Incidence Ge/Si Meta-Structure Avalanche Photodetector
by Jinwen Song, Shangwu Bin, Chaobiao Zhou and Binyi Qin
Photonics 2023, 10(7), 780; https://doi.org/10.3390/photonics10070780 - 4 Jul 2023
Cited by 5 | Viewed by 1923
Abstract
A high-speed and high-sensitivity avalanche photodetector (APD) is a critical component of a high-data-rate and low-power optical-communication link. In this paper, we study a high-speed and high-efficiency Ge/Si heterostructure APD. First, we numerically study the speed performance of the APD by analyzing frequency [...] Read more.
A high-speed and high-sensitivity avalanche photodetector (APD) is a critical component of a high-data-rate and low-power optical-communication link. In this paper, we study a high-speed and high-efficiency Ge/Si heterostructure APD. First, we numerically study the speed performance of the APD by analyzing frequency response. An optimized epitaxial structure of the high-speed APD is designed. In the absence of RC time effects, the APD exhibits a fast pulse response (full-width at half-maximum) of 10 ps and a high 3 dB bandwidth of 33 GHz at a high-gain value of 10. Taking device size and the corresponding RC time effects into account, the APD still achieves a high 3 dB bandwidth of 29 GHz at a gain value of 10. Moreover, a novel subwavelength periodic hole array is designed on the normal-incidence APD for enhancing light absorption without sacrificing speed performance. Near-perfect absorption is almost achieved by an infinite-period hole array due to the coupling of dual-resonance modes. A high-absorption efficiency of 64% is obtained by a limited-sized hole array in the high-speed APD. This work provides a promising method to design high-speed and high-efficiency normal-incidence Ge/Si heterostructure APDs for optical interconnect systems. Full article
(This article belongs to the Special Issue Advances in Avalanche Photodiodes)
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15 pages, 8002 KiB  
Article
A Current-Mode Optoelectronic Receiver IC for Short-Range LiDAR Sensors in 180 nm CMOS
by Yu Hu, Ji-Eun Joo, Xinyue Zhang, Yeojin Chon, Shinhae Choi, Myung-Jae Lee and Sung-Min Park
Photonics 2023, 10(7), 746; https://doi.org/10.3390/photonics10070746 - 28 Jun 2023
Cited by 3 | Viewed by 1640
Abstract
This paper presents three different types of on-chip avalanche photodiodes (APDs) realized in a TSMC 180 nm 1P6M RF CMOS process, i.e., a P+/N-well (NW) APD for its high responsivity and large bandwidth by excluding slow diffusion currents; a P+ [...] Read more.
This paper presents three different types of on-chip avalanche photodiodes (APDs) realized in a TSMC 180 nm 1P6M RF CMOS process, i.e., a P+/N-well (NW) APD for its high responsivity and large bandwidth by excluding slow diffusion currents; a P+/Deep N-well (DNW) APD for its improved near-infrared (NIR) sensitivity; and a P+/NW/DNW APD for its capability to prevent premature edge breakdown and improve NIR sensitivity. Thereafter, a conventional voltage-mode optoelectronic receiver (V-OER) was realized to confirm the feasibility of the three on-chip APDs. However, the measured results of the V-OER demonstrate a very narrow dynamic range. Therefore, we propose a current-mode optoelectronic receiver (C-OER) realized in the same CMOS process for the applications of short-range LiDAR sensors, where current-conveyor input buffers are exploited to deliver the photocurrents with no significant signal loss to the following inverter cascode transimpedance amplifier, hence resulting in an extended dynamic range. The optically measured results of the C-OER with an 850 nm laser source demonstrate large output pulses. The C-OER chip consumes 47.8 mW from a 1.8 V supply and the core occupies 0.087 mm2. Full article
(This article belongs to the Special Issue Advances in Avalanche Photodiodes)
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15 pages, 3912 KiB  
Article
Preparation and Characterization of Nanostructured Inorganic Copper Zinc Tin Sulfide-Delafossite Nano/Micro Composite as a Novel Photodetector with High Efficiency
by Amira H. Ali, Asmaa S. Hassan, Ashour M. Ahmed, Ahmed A. Abdel-Khaliek, Sawsan Abd El Khalik, Safaa M. Abass, Mohamed Shaban, Fatimah Mohammed Alzahrani and Mohamed Rabia
Photonics 2022, 9(12), 979; https://doi.org/10.3390/photonics9120979 - 14 Dec 2022
Cited by 5 | Viewed by 2412
Abstract
A novel photodetector, based on Cu2ZnSnS4, CZTS, is deposited on Cu/CuFeO2 for wavelength and light power intensity detection. The preparation of CuFeO2 is carried out by the direct combustion of Cu foil wetted with Fe(NO3)2 [...] Read more.
A novel photodetector, based on Cu2ZnSnS4, CZTS, is deposited on Cu/CuFeO2 for wavelength and light power intensity detection. The preparation of CuFeO2 is carried out by the direct combustion of Cu foil wetted with Fe(NO3)2 solution. The preparation of CZTS is carried out using the hydrothermal method, then it is dropped on CuFeO2 using the drop casting method at 70 °C. Various analyses are used to look at the chemical, morphological, and optical aspects of the Cu/CuFeO2/CZTS, such as UV–vis, SEM, TEM, selected-area electron diffraction, and XRD, in which all characteristic peaks are confirmed for the prepared materials. The Cu/CuFeO2/CZTS thin film’s SEM image has a homogeneous morphology, with particles that are around 350 nm in size, demonstrating a significant improvement in morphology over Cu/CuFeO2/CZTS thin film. The TEM analysis verified the nanostructured morphology of Cu/CuFeO2/CZTS. From XRD analysis of Cu/CuFeO2/CZTS, the high intensity of the generated peaks indexed to hexagonal (2H) CuFeO2 and kesterite CZTS crystal structures revealed a compact highly crystal material. From optical analysis, CZTS, Cu/CuFeO2, and Cu/CuFeO2/CZTS thin films recoded band gaps of 1.49, 1.75, and 1.23 eV, respectively. According to the band gap measurements, the optical absorption of the Cu/CuFeO2/CZTS photodetector has clearly increased. The Cu/CuFeO2/CZTS as photodetector has a detectivity (D) and responsivity (R) of 1.7 × 1010 Jones and 127 mAW−1, respectively. Moreover, the external quantum efficiency (EQE) is 41.5% at 25 mW·cm−2 and 390 nm. Hence, the prepared Cu/CuFeO2/CZTS photodetector has a very high photoelectrical response, making it very promising as a broadband photodetector. Full article
(This article belongs to the Special Issue Advances in Avalanche Photodiodes)
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Review

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16 pages, 4443 KiB  
Review
Sb-Based Low-Noise Avalanche Photodiodes
by Joe C. Campbell, John P. R. David and Seth R. Bank
Photonics 2023, 10(7), 715; https://doi.org/10.3390/photonics10070715 - 22 Jun 2023
Cited by 4 | Viewed by 3239
Abstract
Accurate detection of weak optical signals is a key function for a wide range of applications. A key performance parameter is the receiver signal-to-noise ratio, which depends on the noise of the photodetector and the following electrical circuitry. The circuit noise is typically [...] Read more.
Accurate detection of weak optical signals is a key function for a wide range of applications. A key performance parameter is the receiver signal-to-noise ratio, which depends on the noise of the photodetector and the following electrical circuitry. The circuit noise is typically larger than the noise of photodetectors that do not have internal gain. As a result, a detector that provides signal gain can achieve higher sensitivity. This is accomplished by increasing the photodetector gain until the noise associated with the gain mechanism is comparable to that of the output electrical circuit. For avalanche photodiodes (APDs), the noise that arises from the gain mechanism, impact ionization, increases with gain and depends on the material from which the APD is fabricated. Si APDs have established the state-of-the-art for low-noise gain for the past five decades. Recently, APDs fabricated from two Sb-based III-V compound quaternary materials, AlxIn1-xAsySb1-y and AlxGa1-xAsySb1-y, have achieved noise characteristics comparable to those of Si APDs with the added benefit that they can operate in the short-wave infrared (SWIR) and extended SWIR spectral regions. This paper describes the materials and device characteristics of these APDs and their performance in different spectral regions. Full article
(This article belongs to the Special Issue Advances in Avalanche Photodiodes)
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