Special Issue "Nanoelectronics: Concepts, Theory and Modeling"

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: 17 July 2020.

Special Issue Editor

Dr. Hatef Sadeghi
Website
Guest Editor
School of Engineering, University of Warwick, CV4 7AL Coventry, United Kingdom
Interests: theory of electron, phonon, and spin transport in nanoscale quantum devices; quantum and phonon interference; thermoelectricity; piezoelectricity; molecular sensing; spintronic and optoelectronics in single molecules,; self-assembeled monolayers; two dimensional materials; van-der Waals heterostructures and bottom-up graphene nanoribbons

Special Issue Information

Dear Colleagues,

Nano-scale materials are attractive for a new generation of devices due to their unique electronic, optical, vibrtional, and chemical properties. Advances in experimental techniques over the past decade have made it possible to probe transport properties down to a few nanometer scales. To design new nanoscale devices and explain new experimental observations, it is essential to make progress in the development of the theory and modeling of electron, phonon, and spin transport through these devices.

In this Special Issue, we would like to invite you to submit an original research paper or review paper on concepts, theory, and modeling of nanoscale materials including analytical and computational modeling of nanoscale materials and junctions, single molecule electronics, quantum coherence and entanglement, interaction effects in nanoscale transport, spintronics, nanoscale energy harvesting using thermoelectricity and piezoelectricity, quantum and phonon interference effects, hybrid graphene nanostructures, and van-der Waals heterostructures and nanoribbons.

Dr. Hatef Sadeghi
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • quantum, phonon, and spin transport
  • environmental and dephasing effects
  • quantum interference
  • thermoelectricity
  • biological sensing
  • spintronic
  • optoelectronics
  • nanoelectronic building blocks
  • piezoelectricty
  • two dimensional materials
  • van-der Waals heterostructures
  • graphene nanoribbons
  • single molecule electronics
  • self-assembled monolayers
  • scattering theory
  • Density Functional Theory
  • molecular dynamics

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Other

Open AccessLetter
Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance
Nanomaterials 2019, 9(9), 1342; https://doi.org/10.3390/nano9091342 - 19 Sep 2019
Cited by 1
Abstract
Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 c -type bulk PdF [...] Read more.
Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 c -type bulk PdF3 compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF3/Ga2O3/PdF3 magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 107). Full article
(This article belongs to the Special Issue Nanoelectronics: Concepts, Theory and Modeling)
Show Figures

Figure 1

Back to TopTop