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Letter

Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance

1
Department of Physics, College of Science, North China University of Science and Technology, Tangshan 063210, China
2
School of Physical Science and Technology, Southwest University, Chongqing 400715, China
3
Laboratoire de Physique Quantique de la Matière et de Modélisation Mathématique, Université de Mascara, Mascara 29000, Algeria
*
Authors to whom correspondence should be addressed.
These authors contributed equally to this work.
Nanomaterials 2019, 9(9), 1342; https://doi.org/10.3390/nano9091342
Received: 2 September 2019 / Revised: 12 September 2019 / Accepted: 16 September 2019 / Published: 19 September 2019
(This article belongs to the Special Issue Nanoelectronics: Concepts, Theory and Modeling)
Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 c -type bulk PdF3 compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF3/Ga2O3/PdF3 magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 107). View Full-Text
Keywords: spin-gapless semiconductors; magnetic tunnel junction; non-equilibrium Green’s function; first-principle calculations spin-gapless semiconductors; magnetic tunnel junction; non-equilibrium Green’s function; first-principle calculations
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MDPI and ACS Style

Chen, Z.; Li, T.; Yang, T.; Xu, H.; Khenata, R.; Gao, Y.; Wang, X. Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance. Nanomaterials 2019, 9, 1342. https://doi.org/10.3390/nano9091342

AMA Style

Chen Z, Li T, Yang T, Xu H, Khenata R, Gao Y, Wang X. Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance. Nanomaterials. 2019; 9(9):1342. https://doi.org/10.3390/nano9091342

Chicago/Turabian Style

Chen, Zongbin, Tingzhou Li, Tie Yang, Heju Xu, Rabah Khenata, Yongchun Gao, and Xiaotian Wang. 2019. "Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance" Nanomaterials 9, no. 9: 1342. https://doi.org/10.3390/nano9091342

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