Special Issue "Nano Fabrications of Solid-State Sensors and Sensor Systems"

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: 25 November 2020.

Special Issue Editor

Dr. Ata Khalid
Website
Guest Editor
Cranfield University, Cranfield, United Kingdom
Interests: infrared, mid-IR semiconductor sources and detectors; THz semiconductor source and detectors; RF and mm-wave security scanners & medical devices

Special Issue Information

Dear Colleagues,

Research into terahertz (THz) radiation, with frequencies between 0.3 THz and 3 THz, has flourished in the last decade. Broadband THz transceivers, e.g. for future 5G systems, intra-chip communications, etc., are being researched, while THz imaging is finding applications in areas such as security, healthcare, pharmaceuticals, automotive, materials science and non-destructive testing. However, most of these applications have been demonstrated inside the laboratory environment, because the nano-fabrication of most of these solid-state sensors and sensor systems are in their infancy. In most cases, nanofabrication techniques are required to develop/demonstrate solid-state sensors and sensor systems suitable to integrate in our handheld devices. There is a unique need for researchers to display the nano-fabrication technologies of these sensors and systems to make rapid progress in this area in order to build future sensor systems.

We invite investigators to submit original research articles, letters, as well as review articles and perspective views, on the nano-fabrication of solid-sate sensors and sensor systems of an electronic and photonic nature covering research in broad electromagnetic wave bands. The present Special Issue of Nanomaterials focuses on the demonstration of new insights, as well as the potential and challenges for the realization of various efficient solid-state sensors and sensor systems. We are looking for research focused on the nano-fabrication of these sensors and sensor systems. Potential topics include but are not limited to quantum dot sensors, quantum cascade lasers (QCLs), THz radiation sensors like micro bolometers, self-switching diodes (SSD), micro light emitting diodes (MLEDs), resonant tunneling diodes (RTD), planar Gunn diodes (PGD), avalanche photo diodes (APD), nanowire sensor and emitters. All novel nano-fabrication research on solid-state sensors is welcome. 

Dr. Ata H Khalid
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Avalanche diodes;
  • josephson junctions;
  • planar and vertical Gunn diodes;
  • Resonant Tunnelling Diode;
  • GaAs, InP, GaN, InGaAs, InN, Compound Semiconductors;
  • Si, Ge, SiGe, Graphene, solid-state Nano diode;
  • Self-switching diodes;
  • SSD, QCL, MEMS;
  • Tactile skin sensors;
  • pressure sensors;
  • nanowire sensors;
  • quantum dot sensors;
  • silver nanowire sensors;
  • Nano fabrication;
  • micro fabrication;
  • solid-state mm-wave sensors;
  • solid-state Terahertz sensors;
  • solid-state acoustic sensors;
  • solid-state ultrasonic sensors

Published Papers (3 papers)

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Research

Open AccessArticle
Advanced Surface Probing Using a Dual-Mode NSOM–AFM Silicon-Based Photosensor
Nanomaterials 2019, 9(12), 1792; https://doi.org/10.3390/nano9121792 - 16 Dec 2019
Abstract
A feasibility analysis is performed for the development and integration of a near-field scanning optical microscope (NSOM) tip–photodetector operating in the visible wavelength domain of an atomic force microscope (AFM) cantilever, involving simulation, processing, and measurement. The new tip–photodetector consists of a platinum–silicon [...] Read more.
A feasibility analysis is performed for the development and integration of a near-field scanning optical microscope (NSOM) tip–photodetector operating in the visible wavelength domain of an atomic force microscope (AFM) cantilever, involving simulation, processing, and measurement. The new tip–photodetector consists of a platinum–silicon truncated conical photodetector sharing a subwavelength aperture, and processing uses advanced nanotechnology tools on a commercial silicon cantilever. Such a combined device enables a dual-mode usage of both AFM and NSOM measurements when collecting the reflected light directly from the scanned surface, while having a more efficient light collection process. In addition to its quite simple fabrication process, it is demonstrated that the AFM tip on which the photodetector is processed remains operational (i.e., the AFM imaging capability is not altered by the process). The AFM–NSOM capability of the processed tip is presented, and preliminary results show that AFM capability is not significantly affected and there is an improvement in surface characterization in the scanning proof of concept. Full article
(This article belongs to the Special Issue Nano Fabrications of Solid-State Sensors and Sensor Systems)
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Open AccessArticle
Optical Polarization Sensitive Ultra-Fast Switching and Photo-Electrical Device
Nanomaterials 2019, 9(12), 1743; https://doi.org/10.3390/nano9121743 - 07 Dec 2019
Abstract
Ultra-fast electrical switches activated with an optical-polarized light trigger, also called photo-polarized activated electrical switches, are presented. A set of new transistor circuits is switched by light from above, illuminating deep V-grooves, whose angle is sensitive to the polarization of the incident. Thus, [...] Read more.
Ultra-fast electrical switches activated with an optical-polarized light trigger, also called photo-polarized activated electrical switches, are presented. A set of new transistor circuits is switched by light from above, illuminating deep V-grooves, whose angle is sensitive to the polarization of the incident. Thus, this application may serve for encryption/decryption devices since the strongest electrical responsivity is only obtained for very specific spatial polarization directions of the illumination beam. When this V-groove is sufficiently narrow, the device mainly responds to one polarization and not to the other. In such a way, electrons are generated only for one specific polarization. While the nature of the data remains electronic, the modulation control is optic, creating a photo-induced current depending on the polarization direction. This coupled device acts as a polarization modulator as well as an intensity modulator. The article focuses on the integration of several devices in different configurations of circuitry: dual, triple, and multi-element. Case studies of several adjacent devices are presented with varying critical variables, such as the V-groove aperture dimensions. Analytical models and complementary numerical analyses are presented for the future smooth integration into Complementary Metal-Oxide-Semiconductor (CMOS) technology. Full article
(This article belongs to the Special Issue Nano Fabrications of Solid-State Sensors and Sensor Systems)
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Open AccessArticle
Hall Amplifier Nanoscale Device (HAND): Modeling, Simulations and Feasibility Analysis for THz Sensor
Nanomaterials 2019, 9(11), 1618; https://doi.org/10.3390/nano9111618 - 14 Nov 2019
Abstract
HAND (Hall Amplifier Nanoscale Device), a new nano-metric device, was designed, simulated, and modeled for feasibility analysis, with the challenge of combining a well-known macro effect into the nanoscale world. HAND is based on the well-known Hall Effect, and it may enable circuitry [...] Read more.
HAND (Hall Amplifier Nanoscale Device), a new nano-metric device, was designed, simulated, and modeled for feasibility analysis, with the challenge of combining a well-known macro effect into the nanoscale world. HAND is based on the well-known Hall Effect, and it may enable circuitry working at very high frequencies (tens of Tera-Hertz). The architecture, design, and simulations were performed while using Comsol Multi-Physics Package Software. Complementary accurate analytical models were developed to support the understanding of the device functionality, including treatment of specific phenomena, such as heat transfer, and mega-magnet feasibility inside integrated circuits. This new device, combining both the Hall Effect and nanoscale dimensions, holds the potential to change the computing rates in the microelectronics circuitry world, and can serve as a game changer. Full article
(This article belongs to the Special Issue Nano Fabrications of Solid-State Sensors and Sensor Systems)
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