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Hall Amplifier Nanoscale Device (HAND): Modeling, Simulations and Feasibility Analysis for THz Sensor

by Avi Karsenty 1,2,* and Raz Mottes 1
1
Advanced Laboratory of Electro-Optics (ALEO), Department of Applied Physics/Electro-Optics Engineering, Lev Academic Center, Jerusalem 9116001, Israel
2
Nanotechnology Center for Education and Research, Lev Academic Center, Jerusalem 9116001, Israel
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(11), 1618; https://doi.org/10.3390/nano9111618
Received: 25 September 2019 / Revised: 8 November 2019 / Accepted: 9 November 2019 / Published: 14 November 2019
(This article belongs to the Special Issue Nano Fabrications of Solid-State Sensors and Sensor Systems)
HAND (Hall Amplifier Nanoscale Device), a new nano-metric device, was designed, simulated, and modeled for feasibility analysis, with the challenge of combining a well-known macro effect into the nanoscale world. HAND is based on the well-known Hall Effect, and it may enable circuitry working at very high frequencies (tens of Tera-Hertz). The architecture, design, and simulations were performed while using Comsol Multi-Physics Package Software. Complementary accurate analytical models were developed to support the understanding of the device functionality, including treatment of specific phenomena, such as heat transfer, and mega-magnet feasibility inside integrated circuits. This new device, combining both the Hall Effect and nanoscale dimensions, holds the potential to change the computing rates in the microelectronics circuitry world, and can serve as a game changer.
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Keywords: Hall Effect; Hall Amplifier; nanoscale sensor; modeling; simulations; heat effects Hall Effect; Hall Amplifier; nanoscale sensor; modeling; simulations; heat effects
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Karsenty, A.; Mottes, R. Hall Amplifier Nanoscale Device (HAND): Modeling, Simulations and Feasibility Analysis for THz Sensor. Nanomaterials 2019, 9, 1618.

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