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Nanomaterials
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Functional Assembly and Property Exploration of Semiconductor Nanostructures
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Functional Assembly and Property Exploration of Semiconductor Nanostructures

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (31 August 2021) | Viewed by 19263

Special Issue Editor

Dr. Ivan Mukhin

E-Mail Website
Guest Editor
1. Higher School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, 195251 St. Petersburg, Russia
2. Center for Nanotechnologies, St. Petersburg Academic University (Alferov University), Khlopina 8/3, 194021 St. Petersburg, Russia
Interests: III-V semiconductors; carbon materials; nanophotonics; optoelectronics; epitaixial and nanotechnologies; microfluidics; solar cells; light-emitting diodes; photodectors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Modern nanoscale semiconductor systems with low dimensions open up new paths for the study and development of optoelectronic devices with distinguished characteristics. Low-dimensional nanoheterostructures, including nanowires and quantum dots, present unambiguous and fascinating properties which allow bandgap engineering and open up new light manipulation strategies.

Semiconductor nanostructures can act as building blocks for the hierarchical assembly of functional nanoscale devices for the desired applications, including optomechanics, single-photon, and single-electron devices.

To fabricate functional devices, semiconductor nanostructures should be organized into ordered structures or patterns on nanoscale. Functional structures can be assembled via various approaches, such as bottom–up (self-organization), top–down (patterning and pattern transfer), and nanomanipulation, as well as unconventional approaches.

Despite considerable progress in advanced fabrication techniques, including various physical and chemical nanostructure synthesis approaches, there are a number of unresolved problems that prevent us from applying these techniques in a way that ensures a low cost, a large area coverage, and high feedthrough production.

This Special Issue provides a venue for researchers to discuss recent progress in nanofabrication, new assembly strategies, and characterization of new functional semiconductor nanomaterials that enable us to develop new emerging optoelectronics applications.

The topics include but are not limited to nanoheterostructures based on III–V, II–VI, wide bandgap, organic semiconductors, and mixed halide perovskites.

Dr. Ivan Mukhin
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor
  • heterostructures
  • nanowires
  • quantum dots
  • semiconductor nanomaterials
  • optoelectronics
  • wide bandgap
  • organic semiconductors
  • perovskites

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Published Papers (6 papers)

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Research

11 pages, 4160 KiB  
Article
Characteristics of the Colorless Polyimide-Based Flexible X-ray Detector with Non-Fullerene Acceptor Polymer
by Jehoon Lee, Jongkyu Won, Duhee Lee, Hailiang Liu and Jungwon Kang
Nanomaterials 2022, 12(6), 918; https://doi.org/10.3390/nano12060918 - 10 Mar 2022
Cited by 1 | Viewed by 2223
Abstract
In this paper, we investigate the characteristics of the colorless polyimide (CPI) film-based flexible organic X-ray detector. The CPI film can be applied to various applications, because it shows excellent visible light transmittance by removing the yellow color of polyimide (PI) film, which [...] Read more.
In this paper, we investigate the characteristics of the colorless polyimide (CPI) film-based flexible organic X-ray detector. The CPI film can be applied to various applications, because it shows excellent visible light transmittance by removing the yellow color of polyimide (PI) film, which has the advantage of physical and chemical stability. In addition, the deformation curvature of the CPI substrate according to temperature showed similar characteristics to that of the glass substrate. For the organic active layer of the proposed detector, PBDB-T was fixed as a donor, and PC71BM and ITIC were used as acceptors. To evaluate the mechanical stability of the flexible detector, the degradation sensitivity was measured as bending curvature and bending cycle. The sensitivity of the detector with ITIC acceptor showed a 46.82% higher result than PC71BM acceptor on bending curvature (R = 10); and at the same curvature, when the bending cycle was 500 times, a 135.85% higher result than PC71BM acceptor. Full article
(This article belongs to the Special Issue Functional Assembly and Property Exploration of Semiconductor Nanostructures)
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13 pages, 2755 KiB  
Article
Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes
by Vladimir Neplokh, Vladimir Fedorov, Alexey Mozharov, Fedor Kochetkov, Konstantin Shugurov, Eduard Moiseev, Nuño Amador-Mendez, Tatiana Statsenko, Sofia Morozova, Dmitry Krasnikov, Albert G. Nasibulin, Regina Islamova, George Cirlin, Maria Tchernycheva and Ivan Mukhin
Nanomaterials 2021, 11(10), 2549; https://doi.org/10.3390/nano11102549 - 29 Sep 2021
Cited by 12 | Viewed by 2758
Abstract
We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from [...] Read more.
We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices. Full article
(This article belongs to the Special Issue Functional Assembly and Property Exploration of Semiconductor Nanostructures)
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14 pages, 27433 KiB  
Article
Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates
by Vladimir V. Fedorov, Yury Berdnikov, Nickolay V. Sibirev, Alexey D. Bolshakov, Sergey V. Fedina, Georgiy A. Sapunov, Liliia N. Dvoretckaia, George Cirlin, Demid A. Kirilenko, Maria Tchernycheva and Ivan S. Mukhin
Nanomaterials 2021, 11(8), 1949; https://doi.org/10.3390/nano11081949 - 28 Jul 2021
Cited by 14 | Viewed by 2730
Abstract
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates [...] Read more.
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs. Full article
(This article belongs to the Special Issue Functional Assembly and Property Exploration of Semiconductor Nanostructures)
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10 pages, 2154 KiB  
Article
Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films
by Fedor M. Kochetkov, Vladimir Neplokh, Viktoria A. Mastalieva, Sungat Mukhangali, Aleksandr A. Vorob’ev, Aleksandr V. Uvarov, Filipp E. Komissarenko, Dmitry M. Mitin, Akanksha Kapoor, Joel Eymery, Nuño Amador-Mendez, Christophe Durand, Dmitry Krasnikov, Albert G. Nasibulin, Maria Tchernycheva and Ivan S. Mukhin
Nanomaterials 2021, 11(6), 1503; https://doi.org/10.3390/nano11061503 - 7 Jun 2021
Cited by 11 | Viewed by 4295
Abstract
We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a [...] Read more.
We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices. Full article
(This article belongs to the Special Issue Functional Assembly and Property Exploration of Semiconductor Nanostructures)
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13 pages, 27004 KiB  
Article
XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
by Olga Yu. Koval, Vladimir V. Fedorov, Alexey D. Bolshakov, Igor E. Eliseev, Sergey V. Fedina, Georgiy A. Sapunov, Stanislav A. Udovenko, Liliia N. Dvoretckaia, Demid A. Kirilenko, Roman G. Burkovsky and Ivan S. Mukhin
Nanomaterials 2021, 11(4), 960; https://doi.org/10.3390/nano11040960 - 9 Apr 2021
Cited by 6 | Viewed by 2942
Abstract
Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires [...] Read more.
Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high concentration of wurtzite phase by molecular beam epitaxy on Si (111) and investigate their crystallinity. Varying the growth temperature and V/III flux ratio, we obtained wurtzite polytype segments with thicknesses in the range from several tens to 500 nm, which demonstrates the high potential of the phase bandgap engineering with highly crystalline self-catalyzed phosphide nanowires. The formation of rotational twins and wurtzite polymorph in vertical nanowires was observed through complex approach based on transmission electron microscopy, powder X-ray diffraction, and reciprocal space mapping. The phase composition, volume fraction of the crystalline phases, and wurtzite GaP lattice parameters were analyzed for the nanowires detached from the substrate. It is shown that the wurtzite phase formation occurs only in the vertically-oriented nanowires during vapor-liquid-solid growth, while the wurtzite phase is absent in GaP islands parasitically grown via the vapor-solid mechanism. The proposed approach can be used for the quantitative evaluation of the mean volume fraction of polytypic phase segments in heterostructured nanowires that are highly desirable for the optimization of growth technologies. Full article
(This article belongs to the Special Issue Functional Assembly and Property Exploration of Semiconductor Nanostructures)
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13 pages, 4685 KiB  
Article
Waveguiding of Photoluminescence in a Layer of Semiconductor Nanoparticles
by Yera Y. Ussembayev, Natalia K. Zawacka, Filip Strubbe, Zeger Hens and Kristiaan Neyts
Nanomaterials 2021, 11(3), 683; https://doi.org/10.3390/nano11030683 - 9 Mar 2021
Cited by 5 | Viewed by 3379
Abstract
Semiconductor nanoparticles (SNPs), such as quantum dots (QDs) and core/shell nanoparticles, have proven to be promising candidates for the development of next-generation technologies, including light-emitting diodes (LEDs), liquid crystal displays (LCDs) and solar concentrators. Typically, these applications use a sub-micrometer-thick film of SNPs [...] Read more.
Semiconductor nanoparticles (SNPs), such as quantum dots (QDs) and core/shell nanoparticles, have proven to be promising candidates for the development of next-generation technologies, including light-emitting diodes (LEDs), liquid crystal displays (LCDs) and solar concentrators. Typically, these applications use a sub-micrometer-thick film of SNPs to realize photoluminescence. However, our current knowledge on how this thin SNP layer affects the optical efficiency remains incomplete. In this work, we demonstrate how the thickness of the photoluminescent layer governs the direction of the emitted light. Our theoretical and experimental results show that the emission is fully outcoupled for sufficiently thin films (monolayer of SNPs), whereas for larger thicknesses (larger than one tenth of the wavelength) an important contribution propagates along the film that acts as a planar waveguide. These findings serve as a guideline for the smart design of diverse QD-based systems, ranging from LEDs, where thinner layers of SNPs maximize the light outcoupling, to luminescent solar concentrators, where a thicker layer of SNPs will boost the efficiency of light concentration. Full article
(This article belongs to the Special Issue Functional Assembly and Property Exploration of Semiconductor Nanostructures)
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