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Functional Assembly and Property Exploration of Semiconductor Nanostructures

This special issue belongs to the section “Synthesis, Interfaces and Nanostructures“.

Special Issue Information

Dear Colleagues,

Modern nanoscale semiconductor systems with low dimensions open up new paths for the study and development of optoelectronic devices with distinguished characteristics. Low-dimensional nanoheterostructures, including nanowires and quantum dots, present unambiguous and fascinating properties which allow bandgap engineering and open up new light manipulation strategies.

Semiconductor nanostructures can act as building blocks for the hierarchical assembly of functional nanoscale devices for the desired applications, including optomechanics, single-photon, and single-electron devices.

To fabricate functional devices, semiconductor nanostructures should be organized into ordered structures or patterns on nanoscale. Functional structures can be assembled via various approaches, such as bottom–up (self-organization), top–down (patterning and pattern transfer), and nanomanipulation, as well as unconventional approaches.

Despite considerable progress in advanced fabrication techniques, including various physical and chemical nanostructure synthesis approaches, there are a number of unresolved problems that prevent us from applying these techniques in a way that ensures a low cost, a large area coverage, and high feedthrough production.

This Special Issue provides a venue for researchers to discuss recent progress in nanofabrication, new assembly strategies, and characterization of new functional semiconductor nanomaterials that enable us to develop new emerging optoelectronics applications.

The topics include but are not limited to nanoheterostructures based on III–V, II–VI, wide bandgap, organic semiconductors, and mixed halide perovskites.

Dr. Ivan Mukhin
Guest Editor

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor
  • heterostructures
  • nanowires
  • quantum dots
  • semiconductor nanomaterials
  • optoelectronics
  • wide bandgap
  • organic semiconductors
  • perovskites

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Nanomaterials - ISSN 2079-4991