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Article

Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

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High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
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Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
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Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, 194100 St. Petersburg, Russia
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Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
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Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia
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N.E. Bauman Moscow State Technical University, 2nd Baumanskaya str. 5/1, 105005 Moscow, Russia
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Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia
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Department of Chemistry and Materials Science, Aalto University, FI-00076 Espoo, Finland
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Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia
*
Author to whom correspondence should be addressed.
Academic Editor: Jong Kyu Kim
Nanomaterials 2021, 11(10), 2549; https://doi.org/10.3390/nano11102549
Received: 20 August 2021 / Revised: 14 September 2021 / Accepted: 21 September 2021 / Published: 29 September 2021
We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices. View Full-Text
Keywords: flexible LED; GaPAs; nanowires; single-walled carbon nanotubes; molecular beam epitaxy flexible LED; GaPAs; nanowires; single-walled carbon nanotubes; molecular beam epitaxy
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MDPI and ACS Style

Neplokh, V.; Fedorov, V.; Mozharov, A.; Kochetkov, F.; Shugurov, K.; Moiseev, E.; Amador-Mendez, N.; Statsenko, T.; Morozova, S.; Krasnikov, D.; Nasibulin, A.G.; Islamova, R.; Cirlin, G.; Tchernycheva, M.; Mukhin, I. Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes. Nanomaterials 2021, 11, 2549. https://doi.org/10.3390/nano11102549

AMA Style

Neplokh V, Fedorov V, Mozharov A, Kochetkov F, Shugurov K, Moiseev E, Amador-Mendez N, Statsenko T, Morozova S, Krasnikov D, Nasibulin AG, Islamova R, Cirlin G, Tchernycheva M, Mukhin I. Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes. Nanomaterials. 2021; 11(10):2549. https://doi.org/10.3390/nano11102549

Chicago/Turabian Style

Neplokh, Vladimir, Vladimir Fedorov, Alexey Mozharov, Fedor Kochetkov, Konstantin Shugurov, Eduard Moiseev, Nuño Amador-Mendez, Tatiana Statsenko, Sofia Morozova, Dmitry Krasnikov, Albert G. Nasibulin, Regina Islamova, George Cirlin, Maria Tchernycheva, and Ivan Mukhin. 2021. "Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes" Nanomaterials 11, no. 10: 2549. https://doi.org/10.3390/nano11102549

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