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Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, 194100 St. Petersburg, Russia
Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia
N.E. Bauman Moscow State Technical University, 2nd Baumanskaya str. 5/1, 105005 Moscow, Russia
Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia
Department of Chemistry and Materials Science, Aalto University, FI-00076 Espoo, Finland
Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia
Author to whom correspondence should be addressed.
Academic Editor: Jong Kyu Kim
Nanomaterials 2021, 11(10), 2549;
Received: 20 August 2021 / Revised: 14 September 2021 / Accepted: 21 September 2021 / Published: 29 September 2021
We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices. View Full-Text
Keywords: flexible LED; GaPAs; nanowires; single-walled carbon nanotubes; molecular beam epitaxy flexible LED; GaPAs; nanowires; single-walled carbon nanotubes; molecular beam epitaxy
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MDPI and ACS Style

Neplokh, V.; Fedorov, V.; Mozharov, A.; Kochetkov, F.; Shugurov, K.; Moiseev, E.; Amador-Mendez, N.; Statsenko, T.; Morozova, S.; Krasnikov, D.; Nasibulin, A.G.; Islamova, R.; Cirlin, G.; Tchernycheva, M.; Mukhin, I. Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes. Nanomaterials 2021, 11, 2549.

AMA Style

Neplokh V, Fedorov V, Mozharov A, Kochetkov F, Shugurov K, Moiseev E, Amador-Mendez N, Statsenko T, Morozova S, Krasnikov D, Nasibulin AG, Islamova R, Cirlin G, Tchernycheva M, Mukhin I. Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes. Nanomaterials. 2021; 11(10):2549.

Chicago/Turabian Style

Neplokh, Vladimir, Vladimir Fedorov, Alexey Mozharov, Fedor Kochetkov, Konstantin Shugurov, Eduard Moiseev, Nuño Amador-Mendez, Tatiana Statsenko, Sofia Morozova, Dmitry Krasnikov, Albert G. Nasibulin, Regina Islamova, George Cirlin, Maria Tchernycheva, and Ivan Mukhin. 2021. "Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes" Nanomaterials 11, no. 10: 2549.

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