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Article

XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires

1
Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia
2
Institute of Physics, Nanotechnology and Telecommunications, Peter the Great Saint Petersburg Polytechnic University, Politekhnicheskaya 29, 195251 Saint Petersburg, Russia
3
School of Photonics, ITMO University, Kronverksky Prospekt 49, 197101 Saint Petersburg, Russia
4
Ioffe Institute, Politekhnicheskaya 26, 194021 Saint Petersburg, Russia
*
Author to whom correspondence should be addressed.
Academic Editor: Luis Morellón
Nanomaterials 2021, 11(4), 960; https://doi.org/10.3390/nano11040960
Received: 23 March 2021 / Revised: 29 March 2021 / Accepted: 6 April 2021 / Published: 9 April 2021
Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high concentration of wurtzite phase by molecular beam epitaxy on Si (111) and investigate their crystallinity. Varying the growth temperature and V/III flux ratio, we obtained wurtzite polytype segments with thicknesses in the range from several tens to 500 nm, which demonstrates the high potential of the phase bandgap engineering with highly crystalline self-catalyzed phosphide nanowires. The formation of rotational twins and wurtzite polymorph in vertical nanowires was observed through complex approach based on transmission electron microscopy, powder X-ray diffraction, and reciprocal space mapping. The phase composition, volume fraction of the crystalline phases, and wurtzite GaP lattice parameters were analyzed for the nanowires detached from the substrate. It is shown that the wurtzite phase formation occurs only in the vertically-oriented nanowires during vapor-liquid-solid growth, while the wurtzite phase is absent in GaP islands parasitically grown via the vapor-solid mechanism. The proposed approach can be used for the quantitative evaluation of the mean volume fraction of polytypic phase segments in heterostructured nanowires that are highly desirable for the optimization of growth technologies. View Full-Text
Keywords: GaP; nanowire; wurtzite; zincblende; XRD; Rietveld refinement; TEM; molecular-beam epitaxy GaP; nanowire; wurtzite; zincblende; XRD; Rietveld refinement; TEM; molecular-beam epitaxy
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MDPI and ACS Style

Koval, O.Y.; Fedorov, V.V.; Bolshakov, A.D.; Eliseev, I.E.; Fedina, S.V.; Sapunov, G.A.; Udovenko, S.A.; Dvoretckaia, L.N.; Kirilenko, D.A.; Burkovsky, R.G.; Mukhin, I.S. XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires. Nanomaterials 2021, 11, 960. https://doi.org/10.3390/nano11040960

AMA Style

Koval OY, Fedorov VV, Bolshakov AD, Eliseev IE, Fedina SV, Sapunov GA, Udovenko SA, Dvoretckaia LN, Kirilenko DA, Burkovsky RG, Mukhin IS. XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires. Nanomaterials. 2021; 11(4):960. https://doi.org/10.3390/nano11040960

Chicago/Turabian Style

Koval, Olga Y., Vladimir V. Fedorov, Alexey D. Bolshakov, Igor E. Eliseev, Sergey V. Fedina, Georgiy A. Sapunov, Stanislav A. Udovenko, Liliia N. Dvoretckaia, Demid A. Kirilenko, Roman G. Burkovsky, and Ivan S. Mukhin 2021. "XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires" Nanomaterials 11, no. 4: 960. https://doi.org/10.3390/nano11040960

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