Functional Graphene-Based Nanodevices: 2nd Edition

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (21 March 2025) | Viewed by 2927

Special Issue Editors


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Guest Editor
School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China
Interests: wide-gap semiconductors; two-dimensional materials; photodetectors; transistors; solar cells; Li-ion batteries
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Guest Editor
College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, China
Interests: surface acoustic wave sensors and their fabrication
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Graphene is composed of single-layer sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice. It has the characteristics of high carrier mobility, ultra-high specific surface area, high optical transparency, and good conductivity and thermal conductivity. Its unique physical and chemical properties make it possible to prepare various functional nanodevices. Therefore, graphene is widely studied and applied, such as in electronics, photonics and optoelectronic circuits, energy storage and conversion, biomedicine, sensors, and other fields.

As a typical ultra-thin two-dimensional nanomaterial, graphene can show new characteristics after physical or chemical modification. For example, due to its unique ultra-thin structure, graphene can easily adjust its properties and functions through surface modification, doping, defects, and so on, so as to realize the functionalization of graphene. Functionalization not only optimizes the traditional properties of graphene but can also help to prepare graphene-based nanodevices with new functions to meet different application needs, which also shows that functionalized graphene-based nanodevices have excellent performance and good application prospects.

We invite researchers to contribute original and review articles on functional graphene-based nanodevices. Potential topics include, but are not limited to, the synthesis, modification, and functionalization of ultra-thin two-dimensional graphene and characterization, characterization methods, and applications of graphene-based nanodevices (including transistors, energy storage devices, sensors, photovoltaics, transparent electrodes, etc.).

We look forward to receiving your contributions.

Dr. Qijin Cheng
Dr. Jian Zhou
Guest Editors

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Keywords

  • nanomaterials
  • nanodevices
  • functionalization
  • synthesis
  • characterization

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Published Papers (2 papers)

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Research

10 pages, 2495 KiB  
Article
Photovoltage-Driven Photoconductor Based on Horizontal p-n-p Junction
by Feng Han, Guanyu Mi, Ying Luo and Jian Lv
Nanomaterials 2024, 14(18), 1483; https://doi.org/10.3390/nano14181483 - 12 Sep 2024
Cited by 1 | Viewed by 873
Abstract
The photoconductive gain theory demonstrates that the photoconductive gain is related to the ratio of carrier lifetime to carrier transit time. Theoretically, to achieve higher gain, one can either prolong the carrier lifetime or select materials with high mobility to shorten the transit [...] Read more.
The photoconductive gain theory demonstrates that the photoconductive gain is related to the ratio of carrier lifetime to carrier transit time. Theoretically, to achieve higher gain, one can either prolong the carrier lifetime or select materials with high mobility to shorten the transit time. However, the former slows the response speed of the device, while the latter increases the dark current and degrades device sensitivity. To address this challenge, a horizontal p-n-p junction-based photoconductor is proposed in this work. This device utilizes the n-region as the charge transport channel, with the charge transport direction perpendicular to the p-n-p junction. This design offers two advantages: (i) the channel is depleted by the space charge layer generated by the p and n regions, enabling the device to maintain a low dark current. (ii) The photovoltage generated in the p-n junction upon light absorption can compress the space charge layer and expand the conductive path in the n-region, enabling the device to achieve high gain and responsivity without relying on long carrier lifetimes. By adopting this device structure design, a balance between responsivity, dark current, and response speed is achieved, offering a new approach to designing high-performance photodetectors based on both traditional materials and emerging nanomaterials. Full article
(This article belongs to the Special Issue Functional Graphene-Based Nanodevices: 2nd Edition)
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12 pages, 5959 KiB  
Article
Enhancing the Consistency and Performance of Graphene-Based Devices via Al Intermediate-Layer-Assisted Transfer and Patterning
by Yinjie Wang, Ningning Su, Shengsheng Wei, Junqiang Wang and Mengwei Li
Nanomaterials 2024, 14(7), 568; https://doi.org/10.3390/nano14070568 - 25 Mar 2024
Viewed by 1361
Abstract
Graphene has garnered widespread attention, and its use is being explored for various electronic devices due to its exceptional material properties. However, the use of polymers (PMMA, photoresists, etc.) during graphene transfer and patterning processes inevitably leaves residues on graphene surface, which can [...] Read more.
Graphene has garnered widespread attention, and its use is being explored for various electronic devices due to its exceptional material properties. However, the use of polymers (PMMA, photoresists, etc.) during graphene transfer and patterning processes inevitably leaves residues on graphene surface, which can decrease the performance and yield of graphene-based devices. This paper proposes a new transfer and patterning process that utilizes an Al intermediate layer to separate graphene from polymers. Through DFT calculations, the binding energy of graphene–Al was found to be only −0.48 eV, much lower than that of PMMA and photoresist with graphene, making it easier to remove Al from graphene. Subsequently, this was confirmed through XPS analysis. A morphological characterization demonstrated that the graphene patterns prepared using the Al intermediate layer process exhibited higher surface quality, with significantly reduced roughness. It is noteworthy that the devices obtained with the proposed method exhibited a notable enhancement in both consistency and sensitivity during electrical testing (increase of 67.14% in temperature sensitivity). The low-cost and pollution-free graphene-processing method proposed in this study will facilitate the further commercialization of graphene-based devices. Full article
(This article belongs to the Special Issue Functional Graphene-Based Nanodevices: 2nd Edition)
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