Next-Generation Infrared Optoelectronic Nanomaterials and Devices

Dear Colleagues,

Various two-dimensional (2D) nanomaterials play an important role in infrared optoelectronic devices. Such materials, including graphene, transition metal dichalcogenides, black phosphorus, and other layered or hybrid structures and heterostructures, have already been extensively investigated. Depending on the specific optical and mechanical properties of these materials, numerous kinds of electronic devices, such as photodetectors, light sources, modulators, and IR sensors, could be obtained. In order to fabricate these devices, chemical doping, mechanical stretching, gating, and/or other approaches have been introduced.

This Special Issue of Nanomaterials will present comprehensive research on the theoretical design and experimental methods to obtain next-generation infrared optoelectronics devices with nanomaterials. This includes colloid quantum dots, graphene, 2D semiconductors, perovskites, and other advanced nanomaterials and their applications in the entire infrared range (from near to mid- and far infrared). We encourage authors to contribute original research articles and review papers with current knowledge of nanomaterials to design next-generation devices.

Potential topics include but are not limited to:

• Infrared and mid-infrared optoelectronics;
• IR and mid-IR photodetectors;
• Heterostructures;
• Amplitude modulators, phase modulators, and other optical modulators;
• Tunable electronic properties;
• Nonlinear optical properties;
• Band alignment and charge transfer;
• Semiconductor moiré materials.

Dr. Xuechao Yu
Dr. Qiu Jiang
Guest Editors

Manuscript Submission Information

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