Recent Advances in Functional Semiconductor Nanostructures: From Properties to Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: 10 October 2024 | Viewed by 878

Special Issue Editors


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Guest Editor
CNR Institute for Microelectronics and Microsystems, 73100 Lecce, Italy
Interests: epitaxial growth and self-assembly; optical properties of semiconductor nano-/heterostructures; nanowires; nanodevices for photonics; nano-optoelectronics; photovoltaics and quantum science and technology

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Guest Editor
Tyndall National Institute, University College Cork, Cork, Ireland
Interests: epitaxy; growth modeling; heterointerfaces; quantum dots; quantum optics; entangled photons and photonic qubits

Special Issue Information

Dear Colleagues,

In the last decades, rapid technological progress has enabled the realization of semiconductor structures down to the nanometer scale with great precision, by using highly sophisticated nanoepitaxial growth techniques and nanofabrication. Today, low-dimensional heterostructures continue to receive remarkable attention due to their unique properties. These systems are considered ideal building blocks for the fabrication of efficient devices exhibiting novel functionalities. As such, they are pivotal to several emerging technologies and advanced applications in areas as diverse as photonics, nanoelectronics, sensing, photovoltaics, and quantum science.

This Special Issue aims to collect recent advances on the comprehension of the fundamental properties, the diverse methods for the synthesis/fabrication, and the physical–chemical characterization of such emerging nanostructures, along with novel applications. It focuses on the different semiconductor nanostructures, including zero-dimensional (quantum dots) and one-dimensional (nanowires) nanostructures, as well as two-dimensional layered materials and related van der Waals heterostructures.

Dr. Paola Prete
Dr. Emanuele Pelucchi
Guest Editors

Manuscript Submission Information

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Keywords

  • semiconductor-based zero-dimensional nanostructures (quantum dots)
  • nanowire heterostructures, core-shell and multi-shell nanowires
  • quantum dots in nanowire structures
  • graphene and graphene-like materials
  • two-dimensional layered materials and related heterostructures
  • semiconductor- and carbon-based nanotubes
  • Van der Waals epitaxy
  • nanoepitaxy
  • MOVPE/MBE epitaxial growth and self-assembly
  • nanodevices for photonics, nanoelectronics, sensing, and photovoltaics
  • semiconductor nanostructures for quantum science and technology

Published Papers (1 paper)

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Research

11 pages, 2824 KiB  
Article
Synthesis and Characterization of SiO2-Based Graphene Nanoballs Using Copper-Vapor-Assisted APCVD for Thermoelectric Application
by Nurkhaizan Zulkepli, Jumril Yunas, Muhammad Aniq Shazni Mohammad Haniff, Dedi, Mohamad Shukri Sirat, Muhammad Hilmi Johari, Nur Nasyifa Mohd Maidin, Aini Ayunni Mohd Raub and Azrul Azlan Hamzah
Nanomaterials 2024, 14(7), 618; https://doi.org/10.3390/nano14070618 - 01 Apr 2024
Viewed by 558
Abstract
This study describes a method by which to synthesize SiO2-based graphene nanoballs (SGB) using atmospheric pressure chemical vapor deposition (APCVD) with copper vapor assistance. This method should solve the contamination, damage, and high costs associated with silica-based indirect graphene synthesis. The [...] Read more.
This study describes a method by which to synthesize SiO2-based graphene nanoballs (SGB) using atmospheric pressure chemical vapor deposition (APCVD) with copper vapor assistance. This method should solve the contamination, damage, and high costs associated with silica-based indirect graphene synthesis. The SGB was synthesized using APCVD, which was optimized using the Taguchi method. Multiple synthesis factors were optimized and investigated to find the ideal synthesis condition to grow SGB for thermoelectric (TE) applications. Raman spectra and FESEM-EDX reveal that the graphene formed on the silicon nanoparticles (SNP) is free from copper. The prepared SGB has excellent electrical conductivity (75.0 S/cm), which shows better results than the previous report. Furthermore, the SGB nanofillers in bismuth telluride (Bi2Te3) nanocomposites as TE materials exhibit a significant increment in Seebeck coefficients (S) compared to the pure Bi2Te3 sample from 109 to 170 μV/K at 400 K, as well as electrical resistivity decrement. This approach would offer a simple strategy to improve the TE performance of commercially available TE materials, which is critical for large-scale industrial applications. Full article
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