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Semiconductor Nanowires and Devices
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Semiconductor Nanowires and Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (15 August 2025) | Viewed by 4730

Special Issue Editor

Dr. Nikolay Petkov

E-Mail Website
Guest Editor
Physical Sciences Department, Munster Technological University, Bishopstown Campus, T12 P928 Cork, Ireland
Interests: beyond-CMOS devices; nanofabrication; interface chemistry, functionalisation, sensor performance and metrology for electronic devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor nanowires have been the subject of research interest since the early 1960s with the discovery of silicon micro-wires or whiskers, and they have been further actively investigated for the last three decades. Their unique physical dimension, surface, and bulk properties enable a vast network of devices with applications in nanoelectronics, nanophotonics, thermoelectrics, energy conversion, and storage, as well as unusual applications for semiconductors such as biochemical sensors, drug delivery systems, and neural interfacing. Meanwhile, nanowire fabrication can usually be categorized into bottom-up or top-down; the device concepts and architectures are numerous and vary significantly by application type. While group IV () together with III–V compound semiconductor nanowires can be used across many different applications, nanowires based on other compound semiconductors as well as organic semiconductor nanowires have recently been introduced and have found niche applications.

The present Special Issue of Nanomaterials aims to highlight the current advances in developing devices based on semiconductor nanowires, for applications ranging from traditional electronics and photonics to energy conversion/storage and sensing. In the present Special Issue, we invite contributions from leading groups in the field with the aim of giving a balanced view of the current state of the art in this discipline.

Dr. Nikolay Petkov
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanoelectronics
  • nanophotonics
  • thermoelectrics
  • energy conversion and storage
  • sensing
  • Si, Ge, Sn, III–V nanowires

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Published Papers (2 papers)

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Research

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22 pages, 512 KB  
Article
Impact of B and P Doping on the Elastic Properties of Si Nanowires
by Nedhal Ali Mahmood Al-Nuaimi, Angela Thränhardt and Sibylle Gemming
Nanomaterials 2025, 15(3), 191; https://doi.org/10.3390/nano15030191 - 25 Jan 2025
Cited by 3 | Viewed by 2250
Abstract
Using gradient-corrected density functional theory we investigate the mechanical properties of ultrathin boron (B) and phosphorus (P) doped silicon nanowires (SiNWs) along the [001] and [111] orientations within the PBE approximation. Both pristine and doped SiNWs under study have diameters ranging from 5 [...] Read more.
Using gradient-corrected density functional theory we investigate the mechanical properties of ultrathin boron (B) and phosphorus (P) doped silicon nanowires (SiNWs) along the [001] and [111] orientations within the PBE approximation. Both pristine and doped SiNWs under study have diameters ranging from 5 to 8 Å. Our results show that doping significantly enhances the bulk modulus (B0), shear modulus (GV), Young’s modulus (Y), and other mechanical parameters. The significant anisotropy observed in the mechanical properties of Si[111] NWs, with varying moduli along different axes, further illustrates the complex interplay between mechanical behavior and electronic structure at the nanoscale. The mechanical flexibility of SiNWs, combined with their tunable electronic properties due to quantum confinement, makes them promising candidates for advanced nanoelectronic devices, nanoelectromechanical systems (NEMS), and advanced technologies. Full article
(This article belongs to the Special Issue Semiconductor Nanowires and Devices)
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Review

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24 pages, 4540 KB  
Review
From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications
by Nikolay Petkov and Giorgos Fagas
Nanomaterials 2025, 15(22), 1737; https://doi.org/10.3390/nano15221737 - 17 Nov 2025
Viewed by 1728
Abstract
In this review, we focus on group IV one-dimensional devices for quantum technology. We outline the foundational principles of quantum computing before delving into materials, architectures and fabrication routes, separately, by comparing the bottom-up and top-down approaches. We demonstrate that due to easily [...] Read more.
In this review, we focus on group IV one-dimensional devices for quantum technology. We outline the foundational principles of quantum computing before delving into materials, architectures and fabrication routes, separately, by comparing the bottom-up and top-down approaches. We demonstrate that due to easily tunable composition and crystal/interface quality and relatively less demanding fabrications, the study of grown nanowires such as core–shell Ge-Si and Ge hut wires has created a very fruitful field for studying unique and foundational quantum phenomena. We discuss in detail how these advancements have set the foundations and furthered realization of SETs and qubit devices with their specific operational characteristics. On the other hand, top-down processed devices, mainly as Si fin/nanowire field-effect transistor (FET) architectures, showed their potential for scaling up the number of qubits while providing ways for very large-scale integration (VLSI) and co-integration with conventional CMOS. In all cases we compare the fin/nanowire qubit architectures to other closely related approaches such as planar (2D) or III–V qubit platforms, aiming to highlight the cutting-edge benefits of using group IV one-dimensional morphologies for quantum computing. Another aim is to provide an informative pedagogical perspective on common fabrication challenges and links between common FET device processing and qubit device architectures. Full article
(This article belongs to the Special Issue Semiconductor Nanowires and Devices)
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