Applications of 2D Semiconductor Nanomaterials for Emerging Optoelectronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 20 September 2026 | Viewed by 641

Editors

School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
Interests: nanomaterial-based optoelectronics

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Guest Editor
School of Engineering, Dali University, Dali 671003, China
Interests: ecological environment informationization; machine vision technology; high-precision measuring instruments; information transmission and intelligent processing technology

Special Issue Information

Dear Colleagues,

2D semiconductor nanomaterials, such as transition metal dichalcogenides, black phosphorus, and hexagonal boron nitride, have emerged as a revolutionary platform for next-generation optoelectronics due to their unique structural, electronic, and optical properties. Their atomic-scale thickness, lack of dangling bonds, tunable bandgaps, and strong light–matter interaction make them highly attractive for applications beyond traditional silicon-based technologies. In recent years, the convergence of 2D materials with emerging device concepts has opened new frontiers in areas such as neuromorphic computing, advanced sensing, and multi-functional integrated photonics. Devices like optoelectronic memristors, photoelectric thin-film transistors and memtransistors are being investigated to emulate biological synaptic and neuronal functions, promising to overcome the von Neumann bottleneck. Furthermore, the development of multi-terminal optoelectronic devices enables complex signal processing and in-memory computing capabilities. This Special Issue aims to capture the rapid progress in this interdisciplinary field, highlighting both the fundamental science and the practical applications of 2D semiconductor nanomaterials in shaping the future of optoelectronics.

We are pleased to invite you to contribute to this exciting Special Issue, which focuses on the applications of 2D semiconductor nanomaterials for emerging optoelectronic devices and systems.

This Special Issue aims to present and disseminate cutting-edge research on the applications of 2D semiconductor nanomaterials for emerging optoelectronic devices and systems. We seek contributions that explore the synthesis, fundamental understanding, and technological exploitation of 2D materials in novel device architectures. The focus is on work that bridges the gap between material innovation and device functionality, particularly for applications in neuromorphic computing, advanced logic, and multi-functional sensing. We encourage submissions that demonstrate how the unique properties of 2D materials can be harnessed to create devices with new or improved capabilities, and we especially value articles that place their findings within the broader context of the field's development.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Optoelectronic memristors and memtransistors based on 2D semiconductors
  • 2D material-based photoelectric thin-film transistors or advanced displays and sensors
  • Synaptic devices and artificial neurons for neuromorphic vision and sensing systems
  • Multi-terminal photoelectric devices for in-memory computing and logic operations
  • Bio-inspired (bionic) vision systems employing 2D optoelectronic synapses
  • Integration of 2D nanomaterials with other material platforms for hybrid optoelectronic systems
  • Device physics and modelling of charge transport and light–matter interaction in low-dimensional systems
  • Novel synthesis, heterostructure engineering, and characterization techniques for 2D optoelectronic applications
  • Scalable fabrication approaches and device reliability for practical applications in emerging technologies

We look forward to receiving your contributions.

Dr. Yanmei Sun
Prof. Dr. Enming Zhao
Guest Editors

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Keywords

  • 2D materials
  • optoelectronic memristors
  • memtransistors
  • photoelectric thin-film transistors
  • neuromorphic computing
  • artificial synapses
  • van der Waals heterostructures
  • light–matter interaction
  • synaptic plasticity
  • scalable fabrication

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Published Papers (1 paper)

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Research

25 pages, 10656 KB  
Article
Spatial-Frequency Image Processing and Enhanced Resolution Using Quantum Cascade Detector with Light-Emitting Diode for Smearing Suppression in Pixelless Infrared Up-Conversion
by Mohamed S. El-Tokhy and Ibrahim M. Fayed
Nanomaterials 2026, 16(14), 854; https://doi.org/10.3390/nano16140854 - 11 Jul 2026
Viewed by 381
Abstract
Pixelless infrared imaging devices based on optoelectronic up-conversion offer a compact and scalable alternative to conventional focal plane arrays; however, their performance is fundamentally limited by lateral carrier diffusion, image smearing, and the trade-off between spatial resolution and conversion efficiency. Existing systems employing [...] Read more.
Pixelless infrared imaging devices based on optoelectronic up-conversion offer a compact and scalable alternative to conventional focal plane arrays; however, their performance is fundamentally limited by lateral carrier diffusion, image smearing, and the trade-off between spatial resolution and conversion efficiency. Existing systems employing quantum well infrared phototransistors (QWIPTs) integrated with light-emitting diodes (LEDs) suffer from degraded modulation transfer function (MTF) at high spatial frequencies and restricted design flexibility. In this article, a quantum cascade detector (QCD)–LED pixelless imaging architecture is proposed and comprehensively modeled as a next-generation alternative. A unified analytical framework is developed to describe carrier concentration, modulation transfer function, image resolution, and image conversion efficiency (ICE) in QCD-LED systems under spatially modulated far-infrared illumination. The models explicitly account for cascade transport, diffusion–drift dynamics, photon recycling, and radiative recombination, enabling direct comparison with conventional QWIPT-LED imagers. Numerical investigations reveal that multi-stage cascade transport significantly suppresses lateral carrier spreading, resulting in a pronounced enhancement in spatial-frequency response. The proposed QCD-LED architecture demonstrates a >32.5% improvement in maximum MTF, a 32.5% increase in conversion efficiency, and a 25% enhancement in response speed, while maintaining comparable or improved image resolution. An optimal performance is achieved for a 10-stage quantum cascade detector with a 2.5 μm period length and a radiative-to-nonradiative lifetime ratio of 0.999, yielding a figure of merit (R × ICE) of 30.99, outperforming previously reported QWIPT-LED systems. Experimental validation confirms excellent agreement with theoretical predictions (R2 = 0.989), particularly at high spatial frequencies where QCD-LED devices exhibit more than 140% improvement in contrast transfer. These results establish quantum cascade detector-based pixelless imagers as a robust platform for high-resolution, high-speed infrared imaging, offering superior spatial fidelity and design flexibility for next-generation optoelectronic imaging systems. Full article
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