Optoelectronic Devices and Applications Based on Emerging Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (31 October 2023) | Viewed by 7767

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The SDC Research Lab, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
Interests: 2D materials; nanodevices; nanomaterials; mixed-dimensional transistors; device physics; neuromorphic devices; integrated circuit; sensors; optoelectronic devices; organic semiconductors; memristors; floating-gate memories; charge traps; charge transports; carbon nanotubes; nanoscale devices; lithography; spectroscopies
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Special Issue Information

Dear Colleagues,

Optoelectronics devices utilize, detect, and control light, including visible and invisible forms such as X-rays, ultraviolet, and infrared, and are operated by energy/signal conversion in electrical-to-optical or optical-to-electrical ways.

This Special Issue calls for research papers, reviews, and short communications related to state-of-the-art developments in optoelectronic devices based on emerging materials including transition-metal dichalcogenides, perovskites, MXenes, polymers, and organic–inorganic hybrid materials.

Dr. Hocheon Yoo
Guest Editor

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Keywords

  • photodetectors
  • phototransistors
  • optical memory
  • X-ray sensors
  • broadband sensors
  • flexible photodetectors
  • solar-blinded UV sensors
  • light-emitting transistors
  • solution process
  • organic-semiconductor-based photosensors
  • photovoltaics in organic semiconductors

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Published Papers (1 paper)

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Review

21 pages, 5818 KiB  
Review
Photogating Effect-Driven Photodetectors and Their Emerging Applications
by Jihyun Shin and Hocheon Yoo
Nanomaterials 2023, 13(5), 882; https://doi.org/10.3390/nano13050882 - 26 Feb 2023
Cited by 31 | Viewed by 7265
Abstract
Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges [...] Read more.
Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect. Full article
(This article belongs to the Special Issue Optoelectronic Devices and Applications Based on Emerging Materials)
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