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New Memristive Materials

A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Materials Chemistry".

Deadline for manuscript submissions: closed (30 April 2021) | Viewed by 2753

Special Issue Editors


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Guest Editor
AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, al. A. Mickiewicza 30, 30-059 Krakow, Poland

E-Mail Website
Guest Editor
Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Krakow, Poland
Interests: chemistry materials science chemical engineering; photochemistry of coordination compounds and bioinorganic chemistry

Special Issue Information

Dear Colleagues,

It is our great pleasure to invite you to contribute manuscripts to the new Special Issue of Molecules, entitled “New Memristive Materials.” For the past twelve years, a rapid growth of interest in experimental and theoretical research on memristive materials has been observed. Everything started in the early 70’s of 20th century though–when Prof. Leon Chua has presented the theory of the fourth basic passive circuit element. In 2008, the first link between theory and physical device has been prevented by Strukov et al., a finding which has initiated vigorous research on resistive switching. It must be noted, however, that electrical peculiarities, now assigned the term memristance, has been reported many times during last two centuries. The field is not free of controversies – numerous reports falsify the concept of memristor, the other confirm it. Recent development of fractional memristors makes the whole story even more complex.

Leaving controversies aside, the nonlinear circuit elements, usually called memristors, proved to be useful as unconventional memory elements, acting as building blocks for non-von Neumann computing architectures. They have helped to change the computations paradigm of many-state logic and analogue processing. Nowadays - state-of-the-art, in the future – yet another ordinary computer parts. Will it be true and can it happen during our lifetimes – most likely so!

Characteristic pinched hysteresis loop (I-V curve) occurs due to more than one phenomenon – including ionic or vacancy motions, electron tunnelling, charge carrier bulk transport, filament formation and disruption, modulation of the Schottky barrier height, etc. This can depend on electrode materials and methods of synthesis of memristive compound or pre- and post-treatment of nano devices. Sufficient scientific knowledge of all foundations allows for implementing simple neuromorphic behaviour in memristive materials, which include a variety of oxides, halide perovskites, chalcogenides, polymers and organic compounds.

This Special Issue will focus on both the synthesis and characterization of the memristive materials mentioned above. We encourage potential authors to propose deep mechanical insights on memristive effects, most likely on atomic/molecular levels; and, to explore new memristive materials and new theoretical models addressing the mechanistic aspects of memristive switching. Manuscripts describing original research, deep theoretical analyses, as well as perspectives will be welcome.

We hope that this Special Issue of Molecules will provide the grounds for a vigorous discussion on the principles of memristance, its mechanistic and materials aspects, and maybe, it will help to solve some fundamental controversies.

Dr. Tomasz Mazur
Prof. Dr. Konrad Szaciłowski
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Molecules is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • memristor
  • neuromorphic computing
  • charge carrier transport mechanisms
  • memristance
  • synaptic plasticity
  • switching phenomena
  • I-V curve
  • hysteresis
  • resistive switching memory
  • Moore’s law
  • non-von Neumann architecture

Published Papers (1 paper)

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Research

12 pages, 3656 KiB  
Article
The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films
by Roman V. Tominov, Zakhar E. Vakulov, Vadim I. Avilov, Daniil A. Khakhulin, Nikita V. Polupanov, Vladimir A. Smirnov and Oleg A. Ageev
Molecules 2021, 26(1), 118; https://doi.org/10.3390/molecules26010118 - 29 Dec 2020
Cited by 8 | Viewed by 2271
Abstract
We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 [...] Read more.
We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films. Full article
(This article belongs to the Special Issue New Memristive Materials)
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