Pulsed Laser Deposition for MEMS Device

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (31 August 2021) | Viewed by 2270

Special Issue Editor

Functional Nanostructures & Nanoelectronics Laboratory (FNNL Lab.), School of Materials Science and Engineering (SMSE), Gwangju Institute of Science and Technology (GIST), 123, Cheomdangwagi-ro, Buk-gu, 61005 Gwangju, Republic of Korea
Interests: chalcogenide thin film; pulsed laser deposition; mem-devices; photoelectrochemical water splitting; organic photovoltaics

Special Issue Information

Dear colleagues,

Pulsed laser deposition (PLD) is a promising technique for the growth of functional thin films because PLD enables the growth of stoichiometric and epitaxial thin film for complex materials.  In this respect, PLD-grown thin films have been widely used for not only understanding fundamental properties of materials but also applying in various fields such as superconductor, mem-device, metal-insulator transition, and so on. Accordingly, this Special Issue seeks to recent advances in the thin film growth using PLD with its application to various fields, especially to modern electronic devices.

Dr. Sehun Seo
Guest Editor

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Keywords

  • Pulsed laser deposition
  • electronic device
  • thin film
  • epitaxial growth

Published Papers (1 paper)

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Research

11 pages, 2830 KiB  
Article
Challenges for Pulsed Laser Deposition of FeSe Thin Films
by Yukiko Obata, Igor A. Karateev, Ivan Pavlov, Alexander L. Vasiliev and Silvia Haindl
Micromachines 2021, 12(10), 1224; https://doi.org/10.3390/mi12101224 - 07 Oct 2021
Cited by 2 | Viewed by 1718
Abstract
Anti-PbO-type FeSe shows an advantageous dependence of its superconducting properties with mechanical strain, which could be utilized as future sensor functionality. Although superconducting FeSe thin films can be grown by various methods, ultrathin films needed in potential sensor applications were only achieved on [...] Read more.
Anti-PbO-type FeSe shows an advantageous dependence of its superconducting properties with mechanical strain, which could be utilized as future sensor functionality. Although superconducting FeSe thin films can be grown by various methods, ultrathin films needed in potential sensor applications were only achieved on a few occasions. In pulsed laser deposition, the main challenges can be attributed to such factors as controlling film stoichiometry (i.e., volatile elements during the growth), nucleation, and bonding to the substrate (i.e., film/substrate interface control) and preventing the deterioration of superconducting properties (i.e., by surface oxidization). In the present study, we address various technical issues in thin film growth of FeSe by pulsed laser deposition, which pose constraints in engineering and reduce the application potential for FeSe thin films in sensor devices. The results indicate the need for sophisticated engineering protocols that include interface control and surface protection from chemical deterioration. This work provides important actual limitations for pulsed laser deposition (PLD) of FeSe thin films with the thicknesses below 30 nm. Full article
(This article belongs to the Special Issue Pulsed Laser Deposition for MEMS Device)
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