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Novel Thin Films: Electrical and Optical Properties
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Novel Thin Films: Electrical and Optical Properties

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (30 November 2020) | Viewed by 7888

Special Issue Editors

Prof. Dr. Andre Pasa

E-Mail Website
Guest Editor
Universidade Federal de Santa Catarina, Florianopolis, Brazil
Interests: electrodeposition; thin films; nanostructures; biomimetic membranes; spintronics; sensors and biosensors; actuating devices (transistors, etc.)
Dr. Milton André Tumelero

E-Mail Website
Guest Editor
Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil
Interests: condensed matter physics; thin films; electrical and magnetoelectric transport; magnetic properties; thermoelectric; semiconductor and semiconductor system optics

Special Issue Information

Dear Colleagues,

Thin films developments have been fundamental in several technologies, such as microelectronics, energy harvesting, magnetic data storage, and processing, as well as general coatings. The continuous advances in these technologies and the rise of new possibilities lie in the discovery and understanding of novel thin films materials and properties. In this Special Issue, we are focused on electrical and optical properties of novel thin film compounds and heterostructures. We are interested in publishing models, results, and discussions relying on electrical and optical phenomena related to thin films, allowing technological and scientific progresses. Full papers, communications, and reviews are welcome in experimental, computational, and theoretical science.

Among the main topics related to this Special Issue are:

- Electrical transport in thin films and heterostructures;

- Electrical and optical effect driven by nanoscaling;

- Thermoelectrical properties of alloys, semimetal, and narrow gap semiconductors;

- Magnetoelectrical properties of novel compound thin films;

- Thin films of novel electronic phases of matter, such as topological materials and spin textured materials;

- Ion electrical transport in organic and inorganic systems;

- Doping and defects in semiconductors thin films;

- Optoelectrical phenomena in thin films and heterostructures;

- Optical absorption and bandgap engineering in novel compound and heterostructures;

- Photoluminescence and point defect optical properties;

- Optical properties of novel compounds thin films.

Prof. Dr. Andre Pasa
Dr. Milton André Tumelero
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin films
  • optical
  • electrical
  • thermoelectrical
  • optoelectrical
  • Semiconductors
  • organic and inorganic
  • heterostructures
  • magnetoelectrical

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Published Papers (2 papers)

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Research

9 pages, 2340 KiB  
Article
Study of Structural and Optoelectronic Properties of Thin Films Made of a Few Layered WS2 Flakes
by Anna Łapińska, Michał Kuźniewicz, Arkadiusz P. Gertych, Karolina Czerniak-Łosiewicz, Klaudia Żerańska-Chudek, Anna Wróblewska, Michał Świniarski, Anna Dużyńska, Jarosław Judek and Mariusz Zdrojek
Materials 2020, 13(23), 5315; https://doi.org/10.3390/ma13235315 - 24 Nov 2020
Cited by 7 | Viewed by 2996
Abstract
We report a surfactant-free exfoliation method of WS2 flakes combined with a vacuum filtration method to fabricate thin (<50 nm) WS2 films, that can be transferred on any arbitrary substrate. Films are composed of thin (<4 nm) single flakes, forming a [...] Read more.
We report a surfactant-free exfoliation method of WS2 flakes combined with a vacuum filtration method to fabricate thin (<50 nm) WS2 films, that can be transferred on any arbitrary substrate. Films are composed of thin (<4 nm) single flakes, forming a large size uniform film, verified by AFM and SEM. Using statistical phonons investigation, we demonstrate structural quality and uniformity of the film sample and we provide first-order temperature coefficient χ, which shows linear dependence over 300–450 K temperature range. Electrical measurements show film sheet resistance RS = 48 MΩ/Υ and also reveal two energy band gaps related to the intrinsic architecture of the thin film. Finally, we show that optical transmission/absorption is rich above the bandgap exhibiting several excitonic resonances, and nearly feature-less below the bandgap. Full article
(This article belongs to the Special Issue Novel Thin Films: Electrical and Optical Properties)
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16 pages, 4334 KiB  
Article
Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments
by Maksymilian Włodarski, Urszula Chodorow, Stanisław Jóźwiak, Matti Putkonen, Tomasz Durejko, Timo Sajavaara and Małgorzata Norek
Materials 2019, 12(19), 3212; https://doi.org/10.3390/ma12193212 - 30 Sep 2019
Cited by 12 | Viewed by 4470
Abstract
The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant [...] Read more.
The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures ≥400 °C and annealing time ≥2 h, and 1:1 stoichiometry was obtained when annealed at 500 °C for 4 h. ZnS crystallized into small crystallites (1–7 nm) with cubic sphalerite structure, which remained stable under the applied annealing conditions. The size of the crystallites (D) tended to decrease with annealing temperature, in agreement with the EDS data (decreased content of both S and Zn with annealing temperature); the D for samples annealed at 600 °C (for the time ≤2 h) was always the smallest. Both reflectivity and ellipsometric spectra showed characteristics typical for quantum confinement (distinct dips/peaks in UV spectral region). It can thus be concluded that the amorphous ZnS layer obtained at a relatively low temperature (150 °C) from organic S precursor transformed into the layers built of small ZnS nanocrystals of cubic structure after annealing at a temperature range of 300–600 °C under Ar atmosphere. Full article
(This article belongs to the Special Issue Novel Thin Films: Electrical and Optical Properties)
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