materials-logo

Journal Browser

Journal Browser

Electrical Properties of Semiconductor Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 December 2022) | Viewed by 3407

Special Issue Editor


E-Mail Website
Guest Editor
Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea
Interests: organic semiconductors; oxide semiconductors; carbon-based semiconductors; transistors; diodes; sensors

Special Issue Information

Dear Colleagues,

Research on the design/process/analysis of electronic materials and semiconductor devices is essential to realize next-generation information devices and future energy technologies. In addition, development of high-performance semiconductor devices and improvement of information calculation speed are required for advanced IoT systems and big data processing. Therefore, in order to overcome the limitations of the conventional silicon semiconductor device, research on various semiconductor materials such as organic semiconductors, oxide semiconductors, and carbon-based materials is required. In particular, the study of the electrical properties of these semiconductor materials can not only define the areas of semiconductor devices and application technologies that can be implemented today, but also accelerate the development of process technologies, doping technologies, and material composition technologies. These efforts for the improvement in the performance of semiconductor devices will present a new paradigm for the electronics industry.

It is my pleasure to invite you to submit a manuscript to this Special Issue which will present a new paradigm for the electronics industry. Full papers, communications, and reviews are all welcome. We expect submissions covering the following topics:

  • Organic semiconductor materials: oligomers and polymers
  • Oxide semiconductor materials
  • Carbon-based semiconductor materials: carbon nanotubes and graphene
  • Two-dimensional semiconductor materials
  • Modulation of electrical properties of semiconductor materials
  • Semiconductor Devices: diodes, capacitors, and transistors
  • Application of semiconductor materials for sensors and energy devices
  • Processing technology of semiconductor devices for flexible and stretchable electronics

Prof. Dr. Jaehoon Park
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • organic semiconductors
  • oxide semiconductors
  • carbon-based semiconductor materials
  • two-dimensional semiconductor materials
  • semiconductor devices
  • electrical characteristics
  • processing technologies

Published Papers (2 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

18 pages, 5002 KiB  
Article
Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance
by Dongwook Kim, Hyeonju Lee, Bokyung Kim, Sungkeun Baang, Kadir Ejderha, Jin-Hyuk Bae and Jaehoon Park
Materials 2022, 15(19), 6763; https://doi.org/10.3390/ma15196763 - 29 Sep 2022
Cited by 3 | Viewed by 1387
Abstract
The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the [...] Read more.
The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy. Full article
(This article belongs to the Special Issue Electrical Properties of Semiconductor Materials)
Show Figures

Figure 1

13 pages, 7421 KiB  
Article
Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTs
by Dongwook Kim, Hyeonju Lee, Bokyung Kim, Xue Zhang, Jin-Hyuk Bae, Jong-Sun Choi and Sungkeun Baang
Materials 2022, 15(10), 3416; https://doi.org/10.3390/ma15103416 - 10 May 2022
Cited by 2 | Viewed by 1651
Abstract
Understanding the chemical reaction pathway of the metal–salt precursor is essential for modifying the properties of solution-processed metal-oxide thin films and further improving their electrical performance. In this study, we focused on the structural growth of solution-processed amorphous indium-zinc-oxide (a-IZO) films [...] Read more.
Understanding the chemical reaction pathway of the metal–salt precursor is essential for modifying the properties of solution-processed metal-oxide thin films and further improving their electrical performance. In this study, we focused on the structural growth of solution-processed amorphous indium-zinc-oxide (a-IZO) films and the electrical behavior of a-IZO thin-film transistors (TFT). To this end, solution-processed a-IZO films were prepared with respect to the Zn molar ratio, and their structural characteristics were analyzed. For the structural characteristic analysis of the a-IZO film, the cross-section, morphology, crystallinity, and atomic composition characteristics were used as the measurement results. Furthermore, the chemical reaction pathway of the nitrate precursor-based IZO solution was evaluated for the growth process of the a-IZO film structure. These interpretations of the growth process and chemical reaction pathway of the a-IZO film were assumed to be due to the thermal decomposition of the IZO solution and the structural rearrangement after annealing. Finally, based on the structural/chemical results, the electrical performance of the fabricated a-IZO TFT depending on the Zn concentration was evaluated, and the electrical behavior was discussed in relation to the structural characteristics. Full article
(This article belongs to the Special Issue Electrical Properties of Semiconductor Materials)
Show Figures

Figure 1

Back to TopTop