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Special Issue Editor

Prof. Dr. Mirko Poljak

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Guest Editor

Faculty of Electrical Engineering and Computing, University of Zagreb, HR-10000 Zagreb, Croatia
Interests: two-dimensional materials; device physics; device simulation; quantum transport; electronic and transport properties

Special Issue Information

Dear Colleagues,

Two-dimensional (2D) materials are highly promising for future semiconductor electronics technology due to their unique structural, electronic, and transport properties. Since the discovery of graphene, dozens of new 2D materials have been reported experimentally and hundreds more predicted to exist by advanced ab initio theoretical calculations. The main motivation for this Special Issue is the search for 2D materials that could replace the conventional silicon–oxide–metal gate structure in future semiconductor chips.

This Special Issue is devoted to providing recent cutting-edge advances in experimental and theoretical research on nanoelectronic devices based on 2D materials beyond graphene. These include but are not limited to novel monoelemental 2D materials (phosphorene, silicene, arsenene, antimonene, etc.), transition metal dichalcogenides (TMDs), alloys and compounds (e.g., alloyed black arsenic phosphorus, AsP), and their heterostructures. The focus is on electronic and transport properties and their impact on the performance of conventional, tunneling, and other implementations of field effect transistors (FETs). This Special Issue especially welcomes submissions that contribute to the understanding of 2D semiconductor–dielectric and 2D semiconductor–metal interfaces and contact resistance properties since they currently present severe technology limiters for the application of 2D materials in nanoelectronics.

Prof. Dr. Mirko Poljak
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

two-dimensional material
nanoelectronic device
field-effect transistor
contact resistance
2D semiconductor–dielectric interface
2D semiconductor–metal interface

Published Papers (3 papers)

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Research

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10 pages, 1076 KiB

Open AccessArticle

Ab-Initio Study of Magnetically Intercalated Platinum Diselenide: The Impact of Platinum Vacancies

by Peter D. Reyntjens, Sabyasachi Tiwari, Maarten L. Van de Put, Bart Sorée and William G. Vandenberghe

Materials 2021, 14(15), 4167; https://doi.org/10.3390/ma14154167 - 27 Jul 2021

Cited by 4 | Viewed by 2160

Abstract

We study the magnetic properties of platinum diselenide (PtSe₂) intercalated with Ti, V, Cr, and Mn, using first-principle density functional theory (DFT) calculations and Monte Carlo (MC) simulations. First, we present the equilibrium position of intercalants in

{PtSe}_{2}

obtained from [...] Read more.

{PtSe}_{2}

obtained from the DFT calculations. Next, we present the magnetic groundstates for each of the intercalants in

{PtSe}_{2}

along with their critical temperature. We show that Ti intercalants result in an in-plane AFM and out-of-plane FM groundstate, whereas Mn intercalant results in in-plane FM and out-of-plane AFM. V intercalants result in an FM groundstate both in the in-plane and the out-of-plane direction, whereas Cr results in an AFM groundstate both in the in-plane and the out-of-plane direction. We find a critical temperature of <0.01 K, 111 K, 133 K, and 68 K for Ti, V, Cr, and Mn intercalants at a 7.5% intercalation, respectively. In the presence of Pt vacancies, we obtain critical temperatures of 63 K, 32 K, 221 K, and 45 K for Ti, V, Cr, and Mn-intercalated

{PtSe}_{2}

, respectively. We show that Pt vacancies can change the magnetic groundstate as well as the critical temperature of intercalated

{PtSe}_{2}

, suggesting that the magnetic groundstate in intercalated

{PtSe}_{2}

can be controlled via defect engineering. Full article

(This article belongs to the Special Issue Novel 2D Materials for Nanoelectronic Devices)

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Figure 1

12 pages, 15139 KiB

Open AccessArticle

Metallization-Induced Quantum Limits of Contact Resistance in Graphene Nanoribbons with One-Dimensional Contacts

by Mirko Poljak and Mislav Matić

Materials 2021, 14(13), 3670; https://doi.org/10.3390/ma14133670 - 30 Jun 2021

Cited by 18 | Viewed by 2161 | Correction

Abstract

Graphene has attracted a lot of interest as a potential replacement for silicon in future integrated circuits due to its remarkable electronic and transport properties. In order to meet technology requirements for an acceptable bandgap, graphene needs to be patterned into graphene nanoribbons (GNRs), while one-dimensional (1D) edge metal contacts (MCs) are needed to allow for the encapsulation and preservation of the transport properties. While the properties of GNRs with ideal contacts have been studied extensively, little is known about the electronic and transport properties of GNRs with 1D edge MCs, including contact resistance (R_C), which is one of the key device parameters. In this work, we employ atomistic quantum transport simulations of GNRs with MCs modeled with the wide-band limit (WBL) approach to explore their metallization effects and contact resistance. By studying density of states (DOS), transmission and conductance, we find that metallization decreases transmission and conductance, and either enlarges or diminishes the transport gap depending on GNR dimensions. We calculate the intrinsic quantum limit of width-normalized R_C and find that the limit depends on GNR dimensions, decreasing with width downscaling to ~21 Ω∙µm in 0.4 nm-wide GNRs, and increasing with length downscaling up to ~196 Ω∙µm in 5 nm-long GNRs. We demonstrate that 1D edge contacts and size engineering can be used to tune the R_C in GNRs to values lower than those of graphene. Full article

(This article belongs to the Special Issue Novel 2D Materials for Nanoelectronic Devices)

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