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Advances in Organic, Inorganic, and Organic/Inorganic Hybrid Composite Functional Materials Which Are High-Frequency and Low-Dielectric

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Special Issue Editor

Dr. Wenxin Fu

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Guest Editor

Institute of Chemistry, Chinese Academic of Sciences, Beijing 100190, China
Interests: low-k materials; benzocyclobutene-based polymers; organic–inorganic composites; organosilicon functional materials; stimuli-responsive polymers

Special Issue Information

Dear Colleagues,

With the rapid development of electronic information technologies, such as high-frequency communication, artificial intelligence, and cloud computing, various types of low-k materials have been adopted to avoid the signal capacitance delay, crosstalk, and increased power consumption caused by metal resistance and parasitic capacitance between lines and layers. For example, organosilicates (fluorinated silicon glass (FSG or SiOF) and organosilicate glass (SiCOH), etc.) have been widely used for low-k interlayer dielectrics in integrated circuits (IC) packaging. Additionally, certain kinds of polymers (such as poly(arylene ether), polyimide, parylene-N/F, polytetrafluoroethylene, benzocyclobutene-based polymer, etc.) are commercially available for spin-on dielectric applications.

Aside from material innovations, advanced chemical and physical structures of organic, inorganic, and hybrid low-k materials should be proposed to meet operation requirements, including outstanding mechanical property, good thermal stability, low shrinkage rate, low expansion coefficient, low water absorption, and good processability and surface smoothness.

The aim of this Special Issue is to elaborate on the recent innovations of functional low-k materials (including organic, inorganic, and organic/inorganic hybrid systems) and understand the relationship between structure and overall performances (such as dielectric, mechanical, thermal stability and other properties).

A thorough study of their chemical structures and compositions, microscopic properties on nano, micro, meso-scales, and different fabrication methods will greatly guide the future design and preparation of next-generation low-k functional materials to adapt to the fast demand of modern electronic components in high-frequency transmission.

Dr. Wenxin Fu
Guest Editor

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Keywords

organo-silicate dielectrics
polymeric low-k materials
organic/inorganic hybrid composites
porous materials and structures
plasma damage and fabrication on low-k dielectric materials
theoretical analyses and multiscale modeling
advanced packaging

Published Papers (2 papers)

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Research

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13 pages, 5998 KiB

Open AccessArticle

Carbonization of Graphene-Doped Isocyanate-Based Polyimide Foams to Achieve Carbon Foams with Excellent Electromagnetic Interference Shielding Performance

by Hui Jing, Zongnan Miao, Zhong Zeng, Hui Liu, Shengtai Zhou, Huawei Zou and Mei Liang

Materials 2021, 14(24), 7551; https://doi.org/10.3390/ma14247551 - 9 Dec 2021

Cited by 12 | Viewed by 1838

Abstract

Lightweight carbon foams with excellent electromagnetic interference (EMI) shielding performance were prepared by carbonization process, using isocyanate-based polyimide foams as carbon precursors. The influence of carbonization temperature and graphene-doping on the morphological, electrical and EMI shielding effectiveness (SE) of corresponding carbon foams was studied in detail. Results showed that the addition of graphene was beneficial to the improvement of electrical conductivity and EMI shielding performance of carbon foams. The electrical conductivity of carbon foams increased with the carbonization temperature which was related to the increase of graphitization degree. Collapse of foam cells was observed at higher carbonization temperatures, which was detrimental to the overall EMI SE. The optimal carbonization temperature was found at 1100 °C and the carbon foams obtained from 0.5 wt% graphene-doped foams exhibited a specific EMI SE of 2886 dB/(g/cm³), which shows potential applications in fields such as aerospace, aeronautics and electronics. Full article

(This article belongs to the Special Issue Advances in Organic, Inorganic, and Organic/Inorganic Hybrid Composite Functional Materials Which Are High-Frequency and Low-Dielectric)

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Review

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20 pages, 107433 KiB

Open AccessReview

The Evolution of Organosilicon Precursors for Low-k Interlayer Dielectric Fabrication Driven by Integration Challenges

by Nianmin Hong, Yinong Zhang, Quan Sun, Wenjie Fan, Menglu Li, Meng Xie and Wenxin Fu

Materials 2021, 14(17), 4827; https://doi.org/10.3390/ma14174827 - 25 Aug 2021

Cited by 9 | Viewed by 4417

Abstract

Since the application of silicon materials in electronic devices in the 1950s, microprocessors are continuously getting smaller, faster, smarter, and larger in data storage capacity. One important factor that makes progress possible is decreasing the dielectric constant of the insulating layer within the integrated circuit (IC). Nevertheless, the evolution of interlayer dielectrics (ILDs) is not driven by a single factor. At first, the objective was to reduce the dielectric constant (k). Reduction of the dielectric constant of a material can be accomplished by selecting chemical bonds with low polarizability and introducing porosity. Moving from silicon dioxide, silsesquioxane-based materials, and silica-based materials to porous silica materials, the industry has been able to reduce the ILDs’ dielectric constant from 4.5 to as low as 1.5. However, porous ILDs are mechanically weak, thermally unstable, and poorly compatible with other materials, which gives them the tendency to absorb chemicals, moisture, etc. All these features create many challenges for the integration of IC during the dual-damascene process, with plasma-induced damage (PID) being the most devastating one. Since the discovery of porous materials, the industry has shifted its focus from decreasing ILDs’ dielectric constant to overcoming these integration challenges. More supplementary precursors (such as Si–C–Si structured compounds), deposition processes (such as NH₃ plasma treatment), and post porosity plasma protection treatment (P4) were invented to solve integration-related challenges. Herein, we present the evolution of interlayer dielectric materials driven by the following three aspects, classification of dielectric materials, deposition methods, and key issues encountered and solved during the integration phase. We aim to provide a brief overview of the development of low-k dielectric materials over the past few decades. Full article

(This article belongs to the Special Issue Advances in Organic, Inorganic, and Organic/Inorganic Hybrid Composite Functional Materials Which Are High-Frequency and Low-Dielectric)

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