Journal Browser

Journal Browser

Special Issue "Doping and Defect Engineering in Semiconductors"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Quantum Materials".

Deadline for manuscript submissions: 10 November 2023 | Viewed by 1007

Special Issue Editor

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Interests: semiconductor devices; non-volatile memory; density functional theory

Special Issue Information

Dear Colleagues,

Semiconductors are particularly useful in industry as their electronic and optical properties are sensitive to dopants and defects. The well-known pn junction is typically achieved by boron and phosphorus doping in silicon, which serve as shallow acceptors and donors. Deep level defects such as gold in silicon affects the recombination rate of excess carriers. However, the emergence of new semiconductors such as oxide semiconductors, 2D semiconductors, and organic semiconductors call for new doping technologies and a new understanding of the dopants and defects in semiconductors. Surface transfer doping and remote doping are representative examples.

On the other hand, renewed characterization techniques as well first principles calculations add to our understanding of doping and defect engineering in semiconductors. In particular, new functionals, such as SCAN and TB09, and new methods, such as DFT-1/2 and shell DFT-1/2, could enable ab initio calculations of dopants and defects in semiconductors, which requires the establishment of large supercells, while maintaining band gap accuracy. It is now time to obtain a deep understanding of dopants and defects in semiconductors from fundamental quantum mechanics.

Therefore, the aim of this Special Issue is to advance and disseminate knowledge in all the related areas of doping and defect engineering in semiconductors. Recommended subjects are listed below, but submissions are not limited to papers covering these key words. The Editor encourages the submission of innovative findings, methodologies, and experimental results to this Special Issue.

Dr. Kan-Hao Xue
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2300 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • surface transfer doping in semiconductors
  • remote doping
  • doping and defect engineering in 2D materials
  • doping and defect engineering in organic semiconductors
  • electronic structure of dopants and defects
  • recombination in semiconductors
  • theoretical calculation for dopants and defects

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:


Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance
Materials 2023, 16(2), 788; - 13 Jan 2023
Viewed by 540
The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a GaAs substrate under a compressive misfit strain. An addition [...] Read more.
The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a GaAs substrate under a compressive misfit strain. An addition of a small atomic fraction of 1% Bi atoms, substituting As atoms in the layer, predominantly enhances the spin–orbit coupling strength in its valence band. The presence of bismuth results in a small decrease in the ferromagnetic Curie temperature and a distinct increase in the coercive fields. On the other hand, the Bi incorporation into the layer strongly enhances the magnitude of negative magnetoresistance without affecting the hole concentration in the layer. The negative magnetoresistance is interpreted in terms of the suppression of weak localization in a magnetic field. Application of the weak-localization theory for two-dimensional ferromagnets by Dugaev et al. to the experimental magnetoresistance results indicates that the decrease in spin–orbit scattering length accounts for the enhanced magnetoresistance in (Ga,Mn)(Bi,As). Full article
(This article belongs to the Special Issue Doping and Defect Engineering in Semiconductors)
Show Figures

Figure 1

Back to TopTop