Doping and Defect Engineering in Semiconductors
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Quantum Materials".
Deadline for manuscript submissions: closed (10 November 2023) | Viewed by 2259
Special Issue Editor
Special Issue Information
Dear Colleagues,
Semiconductors are particularly useful in industry as their electronic and optical properties are sensitive to dopants and defects. The well-known pn junction is typically achieved by boron and phosphorus doping in silicon, which serve as shallow acceptors and donors. Deep level defects such as gold in silicon affects the recombination rate of excess carriers. However, the emergence of new semiconductors such as oxide semiconductors, 2D semiconductors, and organic semiconductors call for new doping technologies and a new understanding of the dopants and defects in semiconductors. Surface transfer doping and remote doping are representative examples.
On the other hand, renewed characterization techniques as well first principles calculations add to our understanding of doping and defect engineering in semiconductors. In particular, new functionals, such as SCAN and TB09, and new methods, such as DFT-1/2 and shell DFT-1/2, could enable ab initio calculations of dopants and defects in semiconductors, which requires the establishment of large supercells, while maintaining band gap accuracy. It is now time to obtain a deep understanding of dopants and defects in semiconductors from fundamental quantum mechanics.
Therefore, the aim of this Special Issue is to advance and disseminate knowledge in all the related areas of doping and defect engineering in semiconductors. Recommended subjects are listed below, but submissions are not limited to papers covering these key words. The Editor encourages the submission of innovative findings, methodologies, and experimental results to this Special Issue.
Dr. Kan-Hao Xue
Guest Editor
Manuscript Submission Information
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Keywords
- surface transfer doping in semiconductors
- remote doping
- doping and defect engineering in 2D materials
- doping and defect engineering in organic semiconductors
- electronic structure of dopants and defects
- recombination in semiconductors
- theoretical calculation for dopants and defects
