Wide-Bandgap and Ultrawide-Bandgap Semiconductors: From Materials to Devices
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: 20 January 2027
Editor
Interests: semiconductor; LEDs; optoelectronics; GaN; wide- and ultra-wide bandgap semiconductors
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Wide-bandgap and ultrawide-bandgap semiconductors have emerged as transformative materials for next-generation electronic and optoelectronic devices. Driven by global trends in energy efficiency, electric vehicles, renewable energy and high-frequency communication, these materials offer superior properties such as high breakdown voltage, thermal stability and fast switching capabilities. Despite significant progress, challenges remain in material synthesis, defect control, device integration and cost-effective manufacturing, presenting both scientific and technological opportunities.
This Special Issue aims to present and disseminate the most recent advances related to wide-bandgap and ultrawide-bandgap semiconductors, from fundamental materials research to practical device applications. We welcome contributions addressing novel material growth techniques, characterization methods, device design, modeling and emerging applications in power electronics, optoelectronics and sensing technologies. Topics of interest include, but are not limited to, SiC, GaN, AlN, diamond, β-Ga2O3, high-frequency and high-power devices, thermal management, reliability and industrial implementation strategies.
Dr. Hezhi Zhang
Guest Editor
Manuscript Submission Information
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Keywords
- wide-bandgap semiconductors
- ultrawide-bandgap semiconductors
- silicon carbide (SiC)
- gallium nitride (GaN)
- gallium oxide (Ga2O3)
- power electronics
- optoelectronics
- high-frequency devices
- semiconductor materials
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