Synthesis of Silicon Carbide—from Nano- to Bulk Single Crystals

Dear Colleagues,

Silicon carbide (SiC) is an advanced functional ceramic offering a unique combination of chemical, physical, and mechanical properties. This makes it one of the best materials for a wide variety of applications, such as for transportation, nuclear, concentrated solar, and aerospace, as well as more generally for all applications where long-term reliability and lifetime performance are needed. SiC is also a wide bandgap semiconductor, which is currently driving a profound evolution of power electronics, by significantly improving the efficiency of electrical power conversion and distribution. More recently, SiC has also shown its strong potential for biotechnologies, notably thanks to its demonstrated biocompatibility, and as a single photon emitter, the latter being accompanied by a strong effervescence from the scientific community. This material is therefore ideal for many applications, and will certainly be widely developed for even more unexpected applications.

From a scientific point of view, SiC has always been, and still is, a fascinating compound facing extreme not so conciliatory thermodynamics and has a tendency to crystallize in different polytypes. Mastering the material at different scales, from its synthesis to its shaping (single crystals, deposits or epitaxial layers, nanowires, nanoparticles, porous, amorphous thin films, etc.) is essential in order to optimize its functionalities.

This Special Issue aims to be a platform for papers dealing with the synthesis of silicon carbide, whatever the method (CVD, PVD, PVT, PDC, carboreduction, Sol–Gel, solution growth, etc.), characterizations of the materials, and the study and optimization of functional properties. Any contributions bringing new light or a better understanding on SiC are encouraged. Regular papers, communications, and reviews are all very welcome, whether of a theoretical or experimental nature.

Dr. Didier Chaussende
Guest Editor

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