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Semiconductor Optoelectronic Materials and Devices

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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Smart Materials".

Deadline for manuscript submissions: closed (31 December 2023) | Viewed by 7699

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Special Issue Editor

Prof. Dr. Wenhong Sun

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Guest Editor

Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
Interests: wide band semiconductor; epitaxial growth; optoelectronic materials and devic-es; perovskite detector; ferroelectric materials and devices

Special Issue Information

Dear Colleagues,

The purpose of this Special Issue is to provide a means of communication and technology transfer between researchers who are interested in semiconductor materials for potential device applications. Materials publishes original papers and review articles on the design, synthesis, characterization and applications of optoelectronic materials.

This issue will bring together outstanding papers reporting new and original work in the following areas: (1) applications of semiconductor physics and technology to electronics and optoelectronics, including theory and device design with appropriate experimental backup; (2) optical, electrical, morphological characterization techniques and parameter extraction with experimental application to real devices; (3) device fabrication and synthesis, including device-related new materials growth, electro-optical characterization and performance evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) modeling and simulation of solid-state devices and processes with appropriate experimental backup; (6) nanoscale electronic and optoelectronic devices for various applications, including photovoltaics and sensing.

Based on the above-mentioned areas, this Special Issue will cover fundamental and applied experimental and theoretical studies of the properties of organic, non-organic and oxide semiconductors, their interfaces and devices, including but not limited to a variety of topics such as:

Fundamental properties;
Materials and nanostructures;
Devices and applications;
Fabrication and processing;
New analytical techniques;
Simulation;
Emerging fields;
Materials and devices for quantum technologies;
Hybrid structures and devices;
Semiconductors for energy;
Flexible electronics;
Developments in optoelectronic devices for photonics;
UV-LEDs applications;
The reliability of optoelectronic devices;
Developments in new optical materials;
Developments in new optical characterization methods and techniques.

Prof. Dr. Wenhong Sun
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

fundamental properties
materials and nanostructures
devices and applications
fabrication and processing
new analytical techniques
simulation
emerging fields
materials and devices for quantum technologies
hybrid structures and devices
semiconductors for energy
flexible electronics
developments in optoelectronic devices for photonics
UV-LEDs applications
reliability of optoelectronic devices
developments in new optical materials
developments in new optical characterization methods and techniques

Published Papers (3 papers)

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Research

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18 pages, 5677 KiB

Open AccessArticle

Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method

by Shuping Zhang, Hong Yang, Lianshan Wang, Hongjuan Cheng, Haixia Lu, Yanlian Yang, Lingyu Wan, Gu Xu, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson and Wenhong Sun

Materials 2023, 16(5), 1925; https://doi.org/10.3390/ma16051925 - 25 Feb 2023

Cited by 1 | Viewed by 1632

Abstract

Bulk aluminum nitride (AlN) crystals with different polarities were grown by physical vapor transport (PVT). The structural, surface, and optical properties of m-plane and c-plane AlN crystals were comparatively studied by using high-resolution X-ray diffraction (HR-XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Temperature-dependent Raman measurements showed that the Raman shift and the full width at half maximum (FWHM) of the E₂ (high) phonon mode of the m-plane AlN crystal were larger than those of the c-plane AlN crystal, which would be correlated with the residual stress and defects in the AlN samples, respectively. Moreover, the phonon lifetime of the Raman-active modes largely decayed and its line width gradually broadened with the increase in temperature. The phonon lifetime of the Raman TO-phonon mode was changed less than that of the LO-phonon mode with temperature in the two crystals. It should be noted that the influence of inhomogeneous impurity phonon scattering on the phonon lifetime and the contribution to the Raman shift came from thermal expansion at a higher temperature. In addition, the trend of stress with increasing 1000/temperature was similar for the two AlN samples. As the temperature increased from 80 K to ~870 K, there was a temperature at which the biaxial stress of the samples transformed from compressive to tensile stress, while their certain temperature was different. Full article

(This article belongs to the Special Issue Semiconductor Optoelectronic Materials and Devices)

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Review

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25 pages, 2353 KiB

Open AccessReview

Research Progress of Wide Tunable Bragg Grating External Cavity Semiconductor Lasers

by Xuan Li, Junce Shi, Long Wei, Keke Ding, Yuhang Ma, Kangxun Sun, Zaijin Li, Yi Qu, Lin Li, Zhongliang Qiao, Guojun Liu, Lina Zeng and Dongxin Xu

Materials 2022, 15(22), 8256; https://doi.org/10.3390/ma15228256 - 21 Nov 2022

Cited by 1 | Viewed by 2361

Abstract

In this paper, we review the progress of wide tunable Bragg grating external cavity semiconductor lasers (BG-ECSLs). We concentrate on BG-ECSLs based on the wide tunable range for multicomponent detection. Wide tunable BG-ECSLs have many important applications, such as wavelength-division multiplexing (WDM) systems, coherent optical communications, gas detection and atom cooling. Wide tunability, narrow linewidth and a high side-mode suppression ratio BG-ECSLs have attracted much attention for their merits. In this paper, three main structures for achieving widely tunable, narrow linewidth, high side-mode suppression ratio BG-ECSLs are reviewed and compared in detail, such as the volume Bragg grating (VBG) structure, fiber Bragg grating (FBG) structure and waveguide Bragg grating (WBG) structure of ECSLs. The advantages and disadvantages of different structures of BG-ECSLs are analyzed. The results show that WBG-ECSLs are a potential way to realize the integration, small size, wide tuning range, stable spectral output and high side-mode suppression ratio laser output. Therefore, the use of WBG as optical feedback elements is still the mainstream direction of BG-ECSLs, and BG-ECSLs offer a further new option for multicomponent detection and multi-atoms cooling. Full article

(This article belongs to the Special Issue Semiconductor Optoelectronic Materials and Devices)

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24 pages, 6198 KiB

Open AccessReview

Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications

by Yufei Yang, Yi Peng, Muhammad Farooq Saleem, Ziqian Chen and Wenhong Sun

Materials 2022, 15(13), 4396; https://doi.org/10.3390/ma15134396 - 22 Jun 2022

Cited by 12 | Viewed by 3031

Abstract

Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III–V compounds are systematically summarized, and the prospects are discussed. Full article

(This article belongs to the Special Issue Semiconductor Optoelectronic Materials and Devices)

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