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Advances in Graphene and Other Novel Two-Dimensional Materials for Electronic Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 5870

Special Issue Editor


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Guest Editor
Applied Physics Department, University of Salamanca, Salamanca, Spain
Interests: monte carlo modeling; graphene; 2D materials; silicon; FET devices; high-frequency noise; RF applications
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Special Issue Information

Dear Colleagues,

In 2004, A. Geim and K. Novoselov, from the University of Manchester, opened a new path in physics and electronic applications when they discovered an easy way to produce graphene, a two-dimensional (2D) allotrope of carbon. Since then, the interest in graphene and, more recently, other two-dimensional materials (such as MoS2, silicene, hexagonal boron nitride, and black phosphorous) has risen exponentially. While graphene shows excellent monopolar carrier transport properties, alternative 2D materials have the potential to provide digital applications with ultra-scaled devices featuring nanometer gate lengths. In general, the atomic-scale thickness of these materials, their large surface-to-volume ratio, and their excellent electronic and mechanical properties make them interesting candidates for future electronic devices capable of offering exciting new applications in, among other things, flexible electronics, high-frequency applications, optoelectronics, and sensors. However, such promising applications will only be possible with much research effort at all levels. Techniques for producing such 2D materials in a viable way for industrial manufacturing, material and device modeling, characterization, and prototype development are all necessary in order to make 2D materials viable in the future.

For this Special Issue, we welcome the submission of original research articles, communications, and reviews on recent advances in graphene and/or novel 2D materials and the electronic devices, sensors, and applications that use them.

Prof. Dr. Raul Rengel
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • graphene
  • novel two-dimensional (2D) materials
  • electronic devices
  • electronic transport properties
  • modeling and theoretical studies
  • photonics and optoelectronics devices
  • sensors
  • synthesis and characterization.

Published Papers (2 papers)

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Research

14 pages, 1122 KiB  
Article
Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence
by Elena Pascual, José M. Iglesias, María J. Martín and Raúl Rengel
Materials 2021, 14(17), 5108; https://doi.org/10.3390/ma14175108 - 6 Sep 2021
Cited by 2 | Viewed by 1400
Abstract
Graphene on different substrates, such as SiO2, h-BN and Al2O3, has been subjected to oscillatory electric fields to analyse the response of the carriers in order to explore the generation of terahertz radiation by means of high-order [...] Read more.
Graphene on different substrates, such as SiO2, h-BN and Al2O3, has been subjected to oscillatory electric fields to analyse the response of the carriers in order to explore the generation of terahertz radiation by means of high-order harmonic extraction. The properties of the ensemble Monte Carlo simulator employed for such study have allowed us to evaluate the high-order harmonic intensity and the spectral density of velocity fluctuations under different amplitudes of the periodic electric field, proving that strong field conditions are preferable for the established goal. Furthermore, by comparison of both harmonic intensity and noise level, the threshold bandwidth for harmonic extraction has been determined. The results have shown that graphene on h-BN presents the best featuring of the cases under analysis and that in comparison to III–V semiconductors, it is a very good option for high-order harmonic extraction under AC electric fields with large amplitudes. Full article
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10 pages, 3881 KiB  
Article
Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
by Maksym Dub, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski, Iwona Pasternak, Grzegorz Cywiński, Dmytro But, Wojciech Knap and Sergey Rumyantsev
Materials 2020, 13(18), 4140; https://doi.org/10.3390/ma13184140 - 17 Sep 2020
Cited by 16 | Viewed by 3959
Abstract
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode [...] Read more.
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1–5) · 1019 eV−1 cm−3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene. Full article
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