Frontiers in Ferroelectrics and Their Electronic Device Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".
Deadline for manuscript submissions: closed (28 February 2021) | Viewed by 2456
Special Issue Editor
Interests: functional crystalline materials, such as ferroelectrics; multiferroics; piezoelectrics; interfaces; and oxide heterostructures for energy harvesting and electronic device applications; and Scanning probe microscopy techniques
Special Issue Information
Dear Colleagues,
Ferroelectrics are an important class of dielectric materials that exhibit spontaneous polarization and are a subset of piezo and pyroelectric materials. What endows ferroelectrics with these special properties is their inversion asymmetric crystal structure and long-range dipolar interactions. Ferroelectrics typically have large dielectric constants and display non-linear optical effects, electro-optic effects, and other polarization coupled phenomena. Ferroelectrics are responsive to a wide variety of external stimuli, e.g., electric field, stress, heat, light, and have found applications in areas including high-energy-density capacitors, energy harvesting, sensors, electromechanical systems, and electronic devices.
The electric potential associated with the spontaneous polarization and its external field-induced controlled reversibility is the fundamental underpinning of many of the electronic device applications of the ferroelectrics. The examples include ferroelectric random-access memories, field-effect transistors, resistive switching devices, and (multi-)ferroic tunnel junctions. A sustained push towards miniature energy-efficient devices based on ferroelectrics requires solutions to challenges associated with their scaling, high-quality thin-film synthesis, modeling, and nanoscale characterization in the presence of external perturbations, e.g. field-induced domain dynamics, mechanically activated transitions, and light-matter interactions.
Over the past several years, tremendous advances have taken place in the synthesis, understanding, and characterization of ferroelectric materials, and have resulted in the increasing prominence of new areas in the field. New areas include novel synthesis approaches that allow fabrication of ferroelectrics on flexible substrates, polar or ferroelectric metals, exotic functional properties of reconfigurable (multi-)ferroic domain walls, negative capacitance effect, mechanically triggered phase transitions, and optical control of electronic states.
This Special Issue focuses on the latest developments in the field of ferroelectrics and the associated new physical phenomena covering advances in synthesis, characterization methods, and electronic device applications.
The topics of interest include but are not limited to:
- Advances in synthesis, modeling, and characterization of ferroelectrics;
- Low dimensional ferroelectric nanostructures, and scaling effects;
- New ferroelectric materials, characterization methods, and physical phenomena such as light–matter interactions, polar metals, functional (multi-)ferroic domain walls, negative capacitance, and external stimuli triggered electronic and phase transitions;
- Scanning probe microscopy, optical, and other methods for spatially resolved property imaging in ferroelectrics;
- Electronic device applications covering field-effect transistors (FETs), 2-dimensional Van der Waals materials interfaced with ferroelectric FETs, tunnel junctions, resistive switching, and memory devices;
- Energy storage, dielectric, and piezoelectric applications.
It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are welcome.
Dr. Pankaj Sharma
Guest Editor
Manuscript Submission Information
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Keywords
- Ferroelectric materials
- scanning probe microscopy
- electronic device applications
