Advanced Plasma Process for Nanoscale Semiconductor Devices
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Manufacturing Processes and Systems".
Deadline for manuscript submissions: 20 June 2025 | Viewed by 289
Special Issue Editor
Interests: atomic scale processing; ferroelectric memory; charge trapping memory; plasma process; synaptic device
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Recent advancements in artificial intelligence (AI) have driven the need to develop diverse semiconductor devices. This involves emerging storage classes of memory aimed at overcoming the limitations of dynamic random-access memory (DRAM), such as low density and frequent refreshing, as well as those of NAND flash memory, such as slow speed and low-level endurance. In addition, there will be technological breakthroughs in novel semiconductor materials exhibiting ferroelectric, photoelectric, magnetic,
We cordially invite you to contribute to this Special Issue, which fosters the development of innovative semiconductor devices alongside the advancement of Plasma-Enhanced Atomic Layer Deposition (ALD) or Atomic Layer Etching (ALE) processes for their fabrication. Additionally, your expertise is anticipated to enrich Atomic Selective Deposition (ASD) process technology through a comprehensive understanding of nanoscale thin film and Remote Plasma System (RPS) Processing, leveraging spatial instead of temporal separation.
I look forward to receiving your contributions.
Prof. Dr. Hee Chul Lee
Guest Editor
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Keywords
- storage class memory
- nanoscale devices
- plasma processing
- atomic layer deposition (ALD)
- atomic layer etching (ALE)
- area-selective deposition (ASD)
- remote plasma system
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