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Materials Innovation Through Atomic Layer Deposition: Process Optimization, Material Properties, and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: 10 December 2025 | Viewed by 220

Special Issue Editor


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Guest Editor
Department of Engineering and Industrial Professions, University of North Alabama, Florence, AL 35632, USA
Interests: nanomanufacturing technology; atomic layer deposition; mechanical engineering

Special Issue Information

Dear Colleagues,

Atomic layer deposition (ALD) has revolutionized materials science and engineering by enabling precise, layer-by-layer deposition of thin films with exceptional uniformity and control. This technique has played a critical role in advancing next-generation materials for applications in microelectronics, energy storage, protective coatings, and biomedical devices. The continuous innovation in ALD processes and materials is driving new frontiers in nanotechnology and industrial manufacturing.

Optimizing ALD process parameters such as precursor chemistry, deposition temperature, and reaction kinetics is essential for enhancing film quality, growth rate, and cost efficiency. Recent research has focused on data-driven approaches, including statistical modeling and machine learning, to achieve precise process control and improve deposition uniformity across large-area substrates. Plasma-enhanced and spatial ALD techniques have further expanded material selection and deposition scalability and facilitated their integration into industrial production.

Material properties, including electrical, optical, and mechanical characteristics, are heavily influenced by ALD process conditions. Advanced characterization techniques, such as X-ray diffraction (XRD), transmission electron microscopy (TEM), and spectroscopic ellipsometry, provide critical insights into film composition, crystallinity, and interfacial properties. These insights enable the design of high-performance materials for specific applications.

ALD’s versatility continues to shape the future of materials science, particularly in semiconductor device fabrication, energy conversion and storage, corrosion-resistant coatings, and flexible electronics. This Special Issue explores recent advancements in ALD process optimization, material innovation, and novel applications, providing a platform for researchers to share breakthroughs that drive the next generation of atomic-scale materials engineering.

Dr. Dongqing Pan
Guest Editor

Manuscript Submission Information

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Keywords

  • atomic layer deposition (ALD)
  • process optimization
  • precursor chemistry
  • material characterization
  • nanotechnology
  • semiconductor fabrication
  • energy storage applications

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Published Papers (1 paper)

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Research

23 pages, 3710 KiB  
Article
Investigation and Optimization of Process Parameters on Growth Rate in Al2O3 Atomic Layer Deposition (ALD) Using Statistical Approach
by Dongqing Pan and Yu Lei
Materials 2025, 18(9), 1918; https://doi.org/10.3390/ma18091918 - 23 Apr 2025
Viewed by 187
Abstract
The improvement in ALD growth rate has always been challenging due to its slow atomic-scale depositions. Although Al2O3 ALD is one of the most widely used ALD processes, the effects of its process parameters on growth rate have not been [...] Read more.
The improvement in ALD growth rate has always been challenging due to its slow atomic-scale depositions. Although Al2O3 ALD is one of the most widely used ALD processes, the effects of its process parameters on growth rate have not been systematically analyzed using statistical approaches. These statistical methods offer better efficiency and effectiveness compared to traditional techniques for studying complex processes like ALD. This paper presents a systematic investigation and optimization of four process parameters on growth rate of Al2O3 ALD thin films using a full factorial design of experiments (DOE) approach. Statistical analysis revealed that deposition temperature is the only statistically significant factor in Al2O3 ALD process, while argon gas flow rate, pulsing time and purging time are tested nonsignificant. Significant interactions were found between deposition temperature and purging time, and between pulsing time and purging time, with all other interactions being nonsignificant. Optimal process settings for higher deposition rate were identified: the temperature and gas flow rate are set at lower levels, while pulsing time and purging time are set at higher levels. Full article
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