Special Issue "Advances in Cadmium Telluride (CdTe) Thin Film Photovoltaic Solar Cells"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Energy Materials".

Deadline for manuscript submissions: 31 May 2020.

Special Issue Editor

Dr. Giray Kartopu
Website
Guest Editor
Swansea University, Centre for Solar Energy Research
Interests: Thin film photovoltaic solar cells; up-scaling of atmospheric metalorganic chemical vapor deposition (MOCVD) process for CdTe photovoltaics; fabrication and characterization of functional, one-dimensional nanostructures of semiconductors and metals

Special Issue Information

Dear Colleagues,

The research on thin film CdTe photovoltaic solar cells has been re-gaining momentum in recent years, due to commercial advances made with regard to CdTe technology. CdTe solar panels are now at parity with poly-crystalline silicon for performance and cost. The recent work in this area appears to focus on increasing absorber carrier density and lifetime, engineering of the material bandgaps for the enhanced light capture and optimization of the oxide/telluride buffer layers for the front/back surface of the CdTe device.

This Special Issue aims to serve an improved understanding of the key issues with the state-of-the art CdTe solar cells to enable further advancement of R&D of the CdTe photovoltaic technology. Not only experimental reports on the CdTe device performance and scaling-up but also theoretical papers, particularly on band-alignment and doping issues, are warmly welcome.

Dr. Giray Kartopu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photovoltaics
  • solar cells
  • thin films
  • semiconductors
  • cadmium telluride (CdTe)
  • MgZnO, CdSe, CdSeTe, ZnTe
  • doping
  • carrier lifetime

Published Papers (1 paper)

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Research

Open AccessArticle
Properties of Arsenic–Doped ZnTe Thin Films as a Back Contact for CdTe Solar Cells
Materials 2019, 12(22), 3706; https://doi.org/10.3390/ma12223706 - 10 Nov 2019
Abstract
As-doped polycrystalline ZnTe layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated as a back contact for CdTe solar cells. While undoped ZnTe films were essentially insulating, the doped layers showed significant rise in conductivity with increasing As concentration. High p-type [...] Read more.
As-doped polycrystalline ZnTe layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated as a back contact for CdTe solar cells. While undoped ZnTe films were essentially insulating, the doped layers showed significant rise in conductivity with increasing As concentration. High p-type carrier densities up 4.5 × 1018 cm−3 was measured by the Hall-effect in heavily doped ZnTe:As films, displaying electrical properties comparable to epitaxial ZnTe single crystalline thin films in the literature. Device incorporation with as-deposited ZnTe:As yielded lower photovoltaic (PV) performance compared to reference devices, due to losses in the open-circuit potential (VOC) and fill factor (FF) related to reducing p-type doping density (NA) in the absorber layer. Some minor recovery observed in absorber doping following a Cl-free post–ZnTe:As deposition anneal in hydrogen at 420 °C contributed to a slight improvement in VOC and NA, highlighting the significance of back contact activation. A mild CdCl2 activation process on the ZnTe:As back contact layer via a sacrificial CdS cap layer has been assessed to suppress Zn losses, which occur in the case of standard CdCl2 anneal treatments (CHT) via formation of volatile ZnCl2. The CdS sacrificial cap was effective in minimising the Zn loss. Compared to untreated and non-capped, mild CHT processed ZnTe:As back contacted devices, mild CHT with a CdS barrier showed the highest recovery in absorber doping and an ~10 mV gain in VOC, with the best cell efficiency approaching the baseline devices. Full article
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Planned Paper 1

Title: Efficient ZMO/CdTe solar cells with CuSCN as back contact

Author: Deng-Bing Li, Rhiannon, DeMilt, Sandip S. Bista, Zhaoning Song, Rasha A. Awni, Yanfa Yan.

Affiliation: Toledo University

Planned Paper 2

Title: Combined Optical-Electrical Optimization of Cd1-xZnxTe/Silicon Tandem Solar Cells

Author: Mehmet Koç, Giray Kartopu, Selçuk Yerci

Affiliation: Middle East Technical University and Swansea University

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