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Advanced Thin Films: Structural, Optical, and Electrical Properties

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (20 November 2025) | Viewed by 1381

Special Issue Editor


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Guest Editor
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Interests: materials science; plasmonics; light–matter interaction; silicon photonics; solar cells; spectroscopy

Special Issue Information

Dear Colleagues,

The Special Issue titled "Advanced Thin Films: Structural, Optical, and Electrical Properties" aims to highlight the recent advancements and research methodologies related to thin films, which are increasingly essential in modern technologies. With applications spanning from electronics and optoelectronics to energy harvesting and storage, understanding the interplay between the structural, optical, and electrical properties of these materials is crucial for their optimization and integration into devices.

This issue seeks to gather innovative research contributions that delve into various aspects of advanced thin films, including, but not limited to, the synthesis techniques, characterization methods, and the influence of film morphology on their functional properties. We encourage submissions that explore new materials—such as nanostructured films, 2D materials, and multifunctional composites—as well as studies focusing on the effects of processing conditions, doping, and interface engineering.

By fostering a multidisciplinary dialogue among researchers, this Special Issue aims to lay the groundwork for future investigations that can enhance the performance and applicability of thin films in next-generation technological solutions, ultimately driving innovation across multiple scientific and industrial fields.

Prof. Dr. Dongsheng Li
Guest Editor

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Keywords

  • advanced thin films
  • optical properties
  • electrical properties
  • synthesis and characterization techniques
  • interface engineering
  • energy harvesting
  • optoelectronics

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Published Papers (3 papers)

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Research

15 pages, 2807 KB  
Article
Flash Lamp Sintering and Optoelectronic Performance of Silver Nanowire Transparent Conductive Films
by Jiaqi Shan, Ye Hong, Kaixuan Cui, Yifan Xiao and Xingzhong Guo
Materials 2025, 18(23), 5456; https://doi.org/10.3390/ma18235456 - 3 Dec 2025
Viewed by 296
Abstract
Silver nanowire transparent conductive films (AgNW TCFs), as a promising new generation of transparent electrode materials poised to replace ITO, have long been plagued by inadequate optoelectronic performance. Herein, flash lamp sintering was used to facilitate rapid welding of TCFs, and the effects [...] Read more.
Silver nanowire transparent conductive films (AgNW TCFs), as a promising new generation of transparent electrode materials poised to replace ITO, have long been plagued by inadequate optoelectronic performance. Herein, flash lamp sintering was used to facilitate rapid welding of TCFs, and the effects of process parameters and TCFs’ characteristics on the sintering outcomes were investigated. The leveraging of millisecond-scale intense light pulses of flash lamp sintering can achieve the rapid welding of AgNWs, thereby enhancing the optoelectronic performance of TCFs. The TCFs fabricated from 30 nm diameter AgNWs with an initial sheet resistance of 111 Ω/sq exhibited a reduced sheet resistance of 57 Ω/sq post-sintering, while maintaining a transmittance of 93.3%. The quality factor increased from 4.56 × 10−3 to 9.09 × 10−3 Ω−1, and the surface roughness decreased from 6.12 to 5.19 nm after sintering. This work holds significant promise for advancing the continuous production of AgNW TCFs using flash lamp sintering technology, potentially paving the way for high-quality, low-cost, and rapid manufacturing of AgNW TCFs. Full article
(This article belongs to the Special Issue Advanced Thin Films: Structural, Optical, and Electrical Properties)
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18 pages, 4454 KB  
Article
Influence of Film Thickness on the Structure and Properties of Copper Thin Films Deposited on BaTiO3 Ceramics by DCMS and HiPIMS
by Yuanhao Liao, Heda Bai, Fengtian Shi, Jin Li and Xiangli Liu
Materials 2025, 18(23), 5333; https://doi.org/10.3390/ma18235333 - 26 Nov 2025
Viewed by 347
Abstract
In this study, we investigate the role of film thickness in modulating the properties of Cu films deposited on BaTiO3 ceramic substrates using direct current magnetron sputtering (DCMS) and high-power pulsed magnetron sputtering (HiPIMS). While HiPIMS is known for producing dense films, [...] Read more.
In this study, we investigate the role of film thickness in modulating the properties of Cu films deposited on BaTiO3 ceramic substrates using direct current magnetron sputtering (DCMS) and high-power pulsed magnetron sputtering (HiPIMS). While HiPIMS is known for producing dense films, and the thickness-dependent properties of sputtered Cu films are well-documented, this work uniquely explores the synergistic interplay between deposition technique and thickness on BaTiO3 ceramic substrates, revealing novel insights into stress evolution and property optimization for advanced microelectronic and coating applications. Cu films of 300 nm, 1000 nm, and 1700 nm were systematically compared for their microstructures, surface morphologies, and electrical and mechanical properties, elucidating the critical role of thickness in densification, stress state, and overall performance. The results indicate that the target current and voltage waveforms of HiPIMS are similar to square waves, and the ionization rate is significantly higher than that of DCMS. Still, the deposition rate at the same power of 180 W is only 44.6% of that of DCMS. The films obtained by both processes present a strong (111) orientation; the crystallite size of the DCMS film grows with increasing thickness, while the HiPIMS film shows increasing and then decreasing, and its residual stress is overall lower than that of DCMS. In terms of surface morphology, DCMS films appeared porous and rough, whereas HiPIMS films were denser and smoother. In terms of properties, the resistivity of HiPIMS films is significantly lower than that of DCMS, especially at 1000 nm thickness. The binding force is also better than that of DCMS, especially at thicknesses less than 1000 nm, which is mainly attributed to the compressive stresses introduced by the energetic ion bombardment at the early deposition stage. These findings provide new mechanistic insights into thickness-dependent stress and property modulation, offering a reference for tailoring high-performance Cu films through process optimization. Full article
(This article belongs to the Special Issue Advanced Thin Films: Structural, Optical, and Electrical Properties)
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19 pages, 5487 KB  
Article
Effect of Addition of Cr on the Structural Properties of Copper Films on BaTiO3 Ceramic Substrates
by Fengtian Shi, Heda Bai, Yuanhao Liao, Jin Li and Xiangli Liu
Materials 2025, 18(21), 4851; https://doi.org/10.3390/ma18214851 - 23 Oct 2025
Viewed by 464
Abstract
In the application of ceramic dielectric filters, to achieve electromagnetic shielding of signals and subsequent integrated applications, it is necessary to carry out metallization treatment on their surfaces. The quality of metallization directly affects the performance of the filter. However, when in use, [...] Read more.
In the application of ceramic dielectric filters, to achieve electromagnetic shielding of signals and subsequent integrated applications, it is necessary to carry out metallization treatment on their surfaces. The quality of metallization directly affects the performance of the filter. However, when in use, the filter may encounter harsh environmental conditions. Therefore, the surface-metallized film needs to have strong corrosion resistance to ensure its long-term stability during use. In this paper, Cu films and copper–chromium alloy films were fabricated on Si (100) substrates and BaTiO3 ceramic substrates by HiPIMS technology. The effects of different added amounts of Cr on the microstructure, electrical conductivity, and corrosion resistance of the Cu films were studied. The results show that with an increase in Cr content, the preferred orientation of the (111) crystal plane gradually weakens, and the grains of the Cu-Cr alloy film gradually decrease. The particles on the film surface are relatively coarse, increasing the surface roughness of the film. However, after doping, the film still maintains a relatively low surface roughness. After doping with Cr, the resistivity of the film increases with the increase in Cr content. The film–substrate bonding force shows a trend of first increasing and then decreasing with the increase in Cr content. Among them, when the Cr content is 2 at.%, the film–substrate bonding force is the greatest. The Cu-Cr alloy film has good corrosion resistance in static corrosion. With the increase in Cr content, the Tafel slope of the cathode increases, and the polarization resistance Rp also increases with the increase in Cr content. After the addition of Cr, both the oxide film resistance and the charge transfer resistance of the electrode reaction of the Cu-Cr alloy film are greater than those of the Cu film. This indicates that the addition of Cr reduces the corrosion rate of the alloy film and enhances its corrosion resistance in a NaCl solution. 2 at.% Cr represents a balanced trade-off in composition. While ensuring the film is dense, uniform, and has good electrical conductivity, the adhesion between the film and the substrate is maximized, and the corrosion resistance of the Cu film is also improved. Full article
(This article belongs to the Special Issue Advanced Thin Films: Structural, Optical, and Electrical Properties)
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