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Ultra-Wide Bandgap Semiconductor Materials and Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 June 2024 | Viewed by 2763

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Guest Editor
Changchun Institute of Optics, Fine Mechanics and Physics, CAS
Interests: materials

Special Issue Information

Dear Colleagues,

Ultra-wide Bandgap Semiconductors (UWBG) includes the high-Al-content AlGaN, boron nitrides, diamond, Ga2O3, NaYO2, etc. The applications of UWBG cover ultraviolet optoelectronics, power and RF electronics, detectors, and so on. The study of UWBG has become a new research hotspot because of the wide applications. However, there are many aspects that need to be further investigated. The objective of this Special Issue is to encourage researchers to exchange and share their strategies and achievements in UWBG materials and devices. The scope of the Special Issue includes, but is not limited to, advances in UWBG materials, especially stress and defects control, doping, and device design, mechanism, and fabrication.

Dr. Xiaojuan Sun
Guest Editor

Manuscript Submission Information

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Keywords

  • UWBG
  • epitaxy
  • devices
  • defects
  • doping

Published Papers (2 papers)

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Research

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14 pages, 4164 KiB  
Article
Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres
by Andriy Luchechko, Vyacheslav Vasyltsiv, Markiyan Kushlyk, Vasyl Hreb, Dmytro Slobodzyan, Leonid Vasylechko and Yaroslav Zhydachevskyy
Materials 2024, 17(6), 1391; https://doi.org/10.3390/ma17061391 - 18 Mar 2024
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Abstract
Undoped and Mg2+-doped β-Ga2O3-20% In2O3 solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the influence of native defects on structural, luminescent, and electrical properties. The synthesis process [...] Read more.
Undoped and Mg2+-doped β-Ga2O3-20% In2O3 solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the influence of native defects on structural, luminescent, and electrical properties. The synthesis process involved varying the oxygen partial pressure by synthesizing samples in either an oxygen or argon atmosphere. X-ray diffraction (XRD) analysis confirmed the monoclinic structure of the samples with the lattice parameters and unit cell volume fitting well to the general trends of the (Ga1−xInx)2O3 solid solution series. Broad emission spectra ranging from 1.5 to 3.5 eV were registered for all samples. Luminescence spectra showed violet, blue, and green emission elementary bands. The luminescence intensity was found to vary depending on the synthesis atmosphere. An argon synthesis atmosphere leads to increasing violet luminescence and decreasing green luminescence. Intense bands at about 4.5 and 5.0 eV and a low-intensity band at 3.3 eV are presented in the excitation spectra. The electrical conductivity of the samples was also determined depending on the synthesis atmosphere. The high-resistance samples obtained in an oxygen atmosphere exhibited activation energy of around 0.98 eV. Samples synthesized in an argon atmosphere demonstrated several orders of magnitude higher conductivity with an activation energy of 0.15 eV. The results suggest that the synthesis atmosphere is crucial in determining the luminescent and electrical properties of undoped β-Ga2O3-In2O3 solid solution samples, offering the potential for various optoelectronic applications. Full article
(This article belongs to the Special Issue Ultra-Wide Bandgap Semiconductor Materials and Devices)
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Review

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45 pages, 10823 KiB  
Review
Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications
by Ory Maimon and Qiliang Li
Materials 2023, 16(24), 7693; https://doi.org/10.3390/ma16247693 - 18 Dec 2023
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Abstract
Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are [...] Read more.
Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for high-power and RF electronics due to its bandgap of 4.9 eV, large theoretical breakdown electric field of 8 MV cm−1, and Baliga figure of merit of 3300, 3–10 times larger than that of SiC and GaN. Moreover, β-Ga2O3 is the only WBG material that can be grown from melt, making large, high-quality, dopable substrates at low costs feasible. Significant efforts in the high-quality epitaxial growth of β-Ga2O3 and β-(AlxGa1−x)2O3 heterostructures has led to high-performance devices for high-power and RF applications. In this report, we provide a comprehensive summary of the progress in β-Ga2O3 field-effect transistors (FETs) including a variety of transistor designs, channel materials, ohmic contact formations and improvements, gate dielectrics, and fabrication processes. Additionally, novel structures proposed through simulations and not yet realized in β-Ga2O3 are presented. Main issues such as defect characterization methods and relevant material preparation, thermal studies and management, and the lack of p-type doping with investigated alternatives are also discussed. Finally, major strategies and outlooks for commercial use will be outlined. Full article
(This article belongs to the Special Issue Ultra-Wide Bandgap Semiconductor Materials and Devices)
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