Special Issue "Wide Band Gap Devices in Energy Storage Systems"

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "D: Energy Storage and Application".

Deadline for manuscript submissions: 20 January 2022.

Special Issue Editors

Prof. Dr. Gianluca Gatto
E-Mail Website
Guest Editor
Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo, 2, 09123 Cagliari CA, Italy
Interests: Power Electronics, Electrical Drives, Electromagnetic Compatibility (EMC)
Dr. Milad Moradpour
E-Mail Website
Guest Editor
Department of Electrical and Electronic Engineering, University of Cagliari, Via Marengo, 2, 09123 Cagliari CA, Italy
Interests: power electronics; switching converters; wide band gap devices; gate driver design; PCB design; electric vehicles; renewable energy resources; control and optimization; EMC design

Special Issue Information

Dear Colleagues,

We are inviting submissions to the Energies Special Issue on “Wide Band Gap Devices in Energy Storage Systems”.

Efficiency, reliability, power density, switching frequency, and cost are the main considerations of power electronic interfaces in energy storage systems (ESSs). To this aim, wide band gap (WBG) devices such as gallium nitride (GaN) and silicon carbide (SiC) with their low power losses and high switching frequency characteristics are the best candidates to replace silicon (Si) power MOSFETs and Si IGBTs in the present and the near future. However, these devices are not still well established in ESSs. The main challenges to be addressed are low current/voltage rating of WBG devices, high current/voltage transients, and particular gate driving needs. In this way, the Special Issue provides a platform to study the aforementioned problems and to accelerate the penetration of WBG devices in ESSs. To overcome the low current/voltage rating of WBG devices in the application of ESSs, innovative power stage design and topologies including device paralleling and series-stacked devices can be studied. Consequently, the innovative topologies need special modulation and control strategies as well. For the high current/voltage transient problem of WBG devices, optimized gate driver/ PCB/ EMC design can be discussed. Innovative gate driver design can also be concerned with the particular gate driving needs of WBG devices.

The issue will include but is not be limited to:

1) Integration and packaging of WBG devices;

2) Power stage design and new topologies of GaN/SiC-based power converters in the application of ESSs;

3) Gate driver design of WBG devices;

4) PCB design of WBG devices;

5) Power scaling of GaN/SiC-based switching converters in the application of ESSs;

6) Hard/soft switching in high frequency GaN/SiC-based power converters;

7) EMC design in GaN/SiC-based power converters;

9) Controller design of GaN/SiC-based power converters in the application of ESSs;

10) Thermal design of GaN/SiC-based power converters.

Prof. Dr. Gianluca Gatto
Dr. Milad Moradpour
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • WBG devices (GaN/SiC)
  • energy storage system (ESS)
  • power stage topology and design in ESSs
  • device paralleling and series-stacked devices
  • gate driver design and optimization
  • PCB design
  • EMC design
  • controller design
  • thermal design

Published Papers (3 papers)

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Research

Article
100 kW Three-Phase Wireless Charger for EV: Experimental Validation Adopting Opposition Method
Energies 2021, 14(8), 2113; https://doi.org/10.3390/en14082113 - 10 Apr 2021
Cited by 1 | Viewed by 623
Abstract
This paper presents the experimental validation, using the opposition method, of a high-power three-phase Wireless-Power-Transfer (WPT) system for automotive applications. The system under test consists of three coils with circular sector shape overlapped to minimize the mutual cross-coupling, a three-phase inverter at primary [...] Read more.
This paper presents the experimental validation, using the opposition method, of a high-power three-phase Wireless-Power-Transfer (WPT) system for automotive applications. The system under test consists of three coils with circular sector shape overlapped to minimize the mutual cross-coupling, a three-phase inverter at primary side and a three-phase rectifier at receiver side. In fact thanks to the delta configuration used to connect the coils of the electromagnetic structure, a three-phase Silicon Carbide (SiC) inverter is driving the transmitter side. The resonance tank capacitors are placed outside of the delta configuration reducing in this way their voltage sizing. This WPT system is used as a 100 kW–85 kHz ultrafast battery charger for light delivery vehicle directly supplied by the power grid of tramways. The adopted test-bench for the WPT charger consists of adding circulating boost converter to the system under test to perform the opposition method technique. The experimental results prove the effectiveness of the proposed structure together with the validation of fully exploited simulation analysis. This is demonstrated by transferring 100 kW with more than 94% DC-to-DC efficiency over 50 mm air gap in aligned conditions. Furthermore, testing of Zero-Current and Zero-Voltage commutations are performed to test the performance of SiC technology employed. Full article
(This article belongs to the Special Issue Wide Band Gap Devices in Energy Storage Systems)
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Article
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies 2021, 14(1), 82; https://doi.org/10.3390/en14010082 - 25 Dec 2020
Viewed by 681
Abstract
A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement effect, which leads to a low on-state voltage ( [...] Read more.
A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement effect, which leads to a low on-state voltage (VON) approaching the SiC trench-gate IGBT. The strong injection enhancement effect is obtained by a heavily doped carrier storage layer (CSL), which creates a hole barrier under the p-body to hinder minority carriers from being extracted away through the p-body. A p-shield is located at the bottom of the CSL and coupled to the p-body of the IGBT by an embedded p-MOSFET (metal-oxide-semiconductor field effect transistors). In off-state, the heavily doped CSL is shielded by the p-MOSFET clamped p-shield. Thus, a high breakdown voltage is maintained. At the same time, owing to the planar-gate structure, the proposed IGBT does not suffer the high oxide field that threatens the long-term reliability of the trench-gate IGBT. The turn-off characteristics of the new IGBT are also studied, and the turn-off energy loss (EOFF) is similar to the conventional planar-gate IGBT. Therefore, the new IGBT achieves the benefits of both the conventional planar-gate IGBT and the trench-gate IGBT, i.e., a superior VON-EOFF trade-off and a low oxide field. Full article
(This article belongs to the Special Issue Wide Band Gap Devices in Energy Storage Systems)
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Article
Design and Implementation of a Control Method for GaN-Based Totem-Pole Boost-Type PFC Rectifier in Energy Storage Systems
Energies 2020, 13(23), 6297; https://doi.org/10.3390/en13236297 - 29 Nov 2020
Cited by 2 | Viewed by 1157
Abstract
With the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Qrr and other more powerful natures of WBG transistors enable totem-pole bridgeless power factor correction to become a dominant solution for energy storage systems (ESS). This paper focuses on [...] Read more.
With the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Qrr and other more powerful natures of WBG transistors enable totem-pole bridgeless power factor correction to become a dominant solution for energy storage systems (ESS). This paper focuses on the design and implementation of a control structure for a totem-pole boost PFC with newfangled enhancement-mode gallium nitride field-effect transistors (eGaN FETs), not only to simplify the control implementation but also to achieve high power quality and efficiency. The converter is designed to convert a 90–264-VAC input to a 385-VDC output for a 2.6-kW output power. Lastly, to validate the methodology, an experimental prototype is characterized and fabricated. The uttermost efficiency at 230 VAC reaches 99.14%. The lowest total harmonic distortion in the current (ITHD) at high line condition (230 V) attains 1.52% while the power factor gains 0.9985. Full article
(This article belongs to the Special Issue Wide Band Gap Devices in Energy Storage Systems)
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