Dear Colleagues,

We are inviting submissions to the Energies Special Issue on “Wide Band Gap Devices in Energy Storage Systems”.

Efficiency, reliability, power density, switching frequency, and cost are the main considerations of power electronic interfaces in energy storage systems (ESSs). To this aim, wide band gap (WBG) devices such as gallium nitride (GaN) and silicon carbide (SiC) with their low power losses and high switching frequency characteristics are the best candidates to replace silicon (Si) power MOSFETs and Si IGBTs in the present and the near future. However, these devices are not still well established in ESSs. The main challenges to be addressed are low current/voltage rating of WBG devices, high current/voltage transients, and particular gate driving needs. In this way, the Special Issue provides a platform to study the aforementioned problems and to accelerate the penetration of WBG devices in ESSs. To overcome the low current/voltage rating of WBG devices in the application of ESSs, innovative power stage design and topologies including device paralleling and series-stacked devices can be studied. Consequently, the innovative topologies need special modulation and control strategies as well. For the high current/voltage transient problem of WBG devices, optimized gate driver/ PCB/ EMC design can be discussed. Innovative gate driver design can also be concerned with the particular gate driving needs of WBG devices.

The issue will include but is not be limited to:

1) Integration and packaging of WBG devices;

2) Power stage design and new topologies of GaN/SiC-based power converters in the application of ESSs;

3) Gate driver design of WBG devices;

4) PCB design of WBG devices;

5) Power scaling of GaN/SiC-based switching converters in the application of ESSs;

6) Hard/soft switching in high frequency GaN/SiC-based power converters;

7) EMC design in GaN/SiC-based power converters;

9) Controller design of GaN/SiC-based power converters in the application of ESSs;

10) Thermal design of GaN/SiC-based power converters.

Prof. Dr. Gianluca Gatto
Dr. Milad Moradpour
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

• WBG devices (GaN/SiC)
• energy storage system (ESS)
• power stage topology and design in ESSs
• device paralleling and series-stacked devices
• gate driver design and optimization
• PCB design
• EMC design
• controller design
• thermal design